Search Results - "Moutanabbir, O"

Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission by Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., Moutanabbir, O.

“…The simultaneous control of lattice strain, composition, and microstructure is crucial to establish high-quality, direct bandgap GeSn semiconductors. Herein,…”
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Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors by Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S-Q., Chelnokov, A., Buca, D., Nam, D.

“…(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device-quality epi-layers and quantum-engineered…”
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Synthesis of Antimonene on Germanium by Fortin-Deschênes, M, Waller, O, Menteş, T. O, Locatelli, A, Mukherjee, S, Genuzio, F, Levesque, P. L, Hébert, A, Martel, R, Moutanabbir, O

“…The lack of large-area synthesis processes on substrates compatible with industry requirements has been one of the major hurdles facing the integration of 2D…”
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Emission and sensing of high-frequency terahertz electric fields using a GaSe crystal by Carnio, B N, Zhang, M, Schunemann, P G, Moutanabbir, O, Elezzabi, A Y

“…A GaSe crystal cut along the (001) crystallographic plane is investigated for the emission and detection of high-frequency (i.e. up to ∼20 THz) electric…”
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Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin by Carnio, B. N., Moutanabbir, O., Elezzabi, A. Y.

“…The parallels between terahertz time-domain spectroscopy (THz-TDS) and discrete Fourier transform spectroscopy (DFTS) are unraveled by showing that the same…”
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Vacancy complexes in nonequilibrium germanium-tin semiconductors by Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., Moutanabbir, O.

“…Depth-profiled pulsed low-energy positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy were combined to identify vacancy-related…”
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Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation by Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., Elezzabi, A. Y.

“…The highly-nonlinear chalcopyrite crystal family has experienced remarkable success as source crystals in the mid-infrared spectral range, such that these…”
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Probing the infrared properties of a p-doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy by Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, O., Elezzabi, A. Y.

“…The complex relative permittivity of doped Ge1−xSnx thin films (realized using state-of-the-art growth techniques) are obtained by devising a methodology based…”
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Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys by Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., Moutanabbir, O.

“…We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germanium/silicon virtual substrates using reduced pressure…”
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Advanced Modeling of Electro‐Optic Sampling: Nonlinear Vectoral‐Field Solutions to Maxwell's Equations by Carnio, B. N., Moutanabbir, O., Elezzabi, A. Y.

“…A comprehensive modeling approach for elucidating the intricacies of electro‐optic (EO) sampling is presented, which fully encapsulates the EO sampling process…”
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Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder by Mukherjee, S, Givan, U, Senz, S, de la Mata, M, Arbiol, J, Moutanabbir, O

“…Nanowires are a versatile platform to investigate and harness phonon and thermal transport phenomena in nanoscale systems. With this perspective, we…”
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Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors by Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., Moutanabbir, O.

“…The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective,…”
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Phonon Engineering in Isotopically Disordered Silicon Nanowires by Mukherjee, S, Givan, U, Senz, S, Bergeron, A, Francoeur, S, de la Mata, M, Arbiol, J, Sekiguchi, T, Itoh, K. M, Isheim, D, Seidman, D. N, Moutanabbir, O

“…The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic…”
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Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon by Atalla, M. R. M., Lemieux-Leduc, C., Assali, S., Koelling, S., Daoust, P., Moutanabbir, O.

“…There is an increasing need for silicon-compatible high-bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and…”
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Effect of implantation temperature on the H-induced microstructural damage in AlN by Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M., Singh, R.

“…•We study the microstructural damage in AlN at various H-implantation temperatures.•Study gives the understanding of surface buckling phenomena in H-implanted…”
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Bulk GaN Ion Cleaving by Moutanabbir, O., Gösele, U.

“…Bulk or freestanding GaN is a key material in various devices other than the blue laser diodes. However, the high cost of bulk GaN wafers severely limits the…”
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The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors by Singh, R., Christiansen, S. H., Moutanabbir, O., Gösele, U.

“…Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are…”
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Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator by Moutanabbir, O., Reiche, M., Hähnel, A., Oehme, M., Kasper, E.

“…We developed a heterostructure to assess accurately the strain evolution upon nanopatterning of 15 nm thick tensile strained silicon-on-insulator (SSOI). Here…”
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Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions by Moutanabbir, O., Terreault, B.

“…Silicon blistering was achieved at unprecedently low ion fluences of 2x10{sup 15} He/cm{sup 2} (8 keV) followed by 6x10{sup 15} H/cm{sup 2} (5 keV), but no…”
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UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure by Moutanabbir, O., Reiche, M., Hähnel, A., Erfurth, W., Motohashi, M., Tarun, A., Hayazawa, N., Kawata, S.

“…Confocal UV-Raman with glycerin-immersed high numerical aperture objective lens was used to probe the local strain in individual strained Si structures. The…”
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