Search Results - "Mountain, R W"
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CCD soft X-ray imaging spectrometer for the ASCA satellite
Published in IEEE transactions on nuclear science (01-02-1994)“…We describe the development of a charge-coupled device (CCD) array for use as a soft X-ray (0.4-12 keV) imaging spectrometer for the ASCA (formerly Astro-D)…”
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2
Integrated electronic shutter for back-illuminated charge-coupled devices
Published in IEEE transactions on electron devices (01-07-1993)“…A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical…”
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3
Planar GaAs p-i-n photodiode with picosecond time response
Published in Applied physics letters (15-01-1985)“…A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in…”
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4
Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films
Published in IEEE transactions on nuclear science (01-12-1986)“…The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on…”
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5
Laser microchemical techniques for reversible restructuring of gate-array prototype circuits
Published in IEEE electron device letters (01-02-1984)“…Laser direct-write Al etching and poly-Si deposition have been adapted to the mask-free alteration of simple gate-array test circuits. Simple test structures…”
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6
Fully isolated lateral bipolar-MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2
Published in IEEE electron device letters (01-08-1983)“…A four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in…”
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7
Silicon graphoepitaxy using a strip-heater oven
Published in Applied physics letters (01-09-1980)“…Silicon graphoepitaxy has been achieved using a strip-heater oven and a sample configuration consisting of a relief grating in a SiO2 substrate, a deposited…”
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8
An abuttable CCD imager for visible and X-ray focal plane arrays
Published in IEEE transactions on electron devices (01-05-1991)“…A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging…”
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Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification
Published in Applied physics letters (01-10-1981)“…Continuous single-crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly-Si films by the LESS technique (lateral…”
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10
Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors
Published in IEEE electron device letters (01-01-1986)“…Three-dimensional (3-D) structures have been fabricated incorporating power bipolar transistors in a Si substrate and metal-oxide-semiconductor field-effect…”
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11
n -channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2
Published in Applied physics letters (01-12-1981)“…n-channel deep-depletion mode metal-oxide-semiconductor field-effect transistors (MOSFET’s) have been fabricated in Si films prepared by zone-melting…”
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12
Electron-beam programmable 128K-bit wafer-scale EPROM
Published in IEEE electron device letters (01-05-1983)“…The feasibility of using an electron beam to customize and repair a wafer-scale n MOS system has been demonstrated. As the test vehicle, a 128K-bit EPROM was…”
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13
Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2
Published in IEEE electron device letters (01-01-1984)“…The effects of ionizing radiation on SOI/CMOS devices fabricated in zone-melting-recrystallized Si films on SiO 2 -coated Si substrates have been investigated…”
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14
Direct-write metallization of Silicon MOSFET's using laser photodeposition
Published in IEEE electron device letters (01-06-1982)“…Gate electrodes of enhancement-mode silicon MOSFET's have been written directly using a new, mask-free laser photodeposition technique. Transistor…”
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15
Merged CMOS/bipolar technologies utilizing zone-melting-recrystallized SOI films
Published in IEEE electron device letters (01-11-1984)“…Two merged CMOS/bipolar technologies utilizing SOI structures have been demonstrated. In each case a single sequence of processing steps was used to fabricate…”
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16
SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates
Published in IEEE electron device letters (01-12-1982)“…A CMOS test circuit chip containing six arrays of 360 to 533 parallel transistors, two 31-stage ring oscillators, and two inverter chains has been designed for…”
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17
A technique for the determination of stress in thin films
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-10-1983)“…Intrinsic stress, elastic bulk modulus, and yield strength of thin films has been determined by measuring the deformation versus pressure of circular membranes…”
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18
Fabrication of large-area CCD detectors on high-purity, float-zone silicon
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-08-1996)“…One of the problems with the fabrication of radiation detectors on high-purity, float-zone silicon is that such material is more susceptible to the formation…”
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VIB-3 high-performance Si permeable-base transistors
Published in IEEE transactions on electron devices (01-11-1985)Get full text
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20
The focused ion beam as an integrated circuit restructuring tool
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-01-1986)“…One of the capabilities of focused ion beam systems is ion milling. The purpose of this work is to explore this capability as a tool for integrated circuit…”
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