Search Results - "Mountain, R W"

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  1. 1

    CCD soft X-ray imaging spectrometer for the ASCA satellite by Burke, B.E., Mountain, R.W., Daniels, P.J., Cooper, M.J., Dolat, V.S.

    Published in IEEE transactions on nuclear science (01-02-1994)
    “…We describe the development of a charge-coupled device (CCD) array for use as a soft X-ray (0.4-12 keV) imaging spectrometer for the ASCA (formerly Astro-D)…”
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  2. 2

    Integrated electronic shutter for back-illuminated charge-coupled devices by Reich, R.K., Mountain, R.W., McGonagle, W.H., Huang, J.C.-M., Twichell, J.C., Kosicki, B.B., Savoye, E.D.

    Published in IEEE transactions on electron devices (01-07-1993)
    “…A novel electronic shutter has been integrated into the structure of a back-illuminated frame-transfer charge-coupled device (CCD) to permit short optical…”
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  3. 3

    Planar GaAs p-i-n photodiode with picosecond time response by LENTH, W, CHU, A, MAHONEY, L. J, MCCLELLAND, R. W, MOUNTAIN, R. W, SILVERSMITH, D. J

    Published in Applied physics letters (15-01-1985)
    “…A high-speed planar GaAs p-i-n photodiode has been fabricated on a semi-insulating GaAs substrate. The time response and sensitivity have been characterized in…”
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  4. 4

    Radiation-Hardened JFET Devices and CMOS Circuits Fabricated in SOI Films by Tsaur, B-Y., Sferrino, V. J., Choi, H. K., Chen, C. K., Mountain, R. W., Schott, J. T., Shedd, W. M., LaPierre, D. C., Blanchard, R.

    Published in IEEE transactions on nuclear science (01-12-1986)
    “…The effects of total-dose radiation have been investigated for the first complementary JFETs fabricated in zone-melting-recrystallized (ZMR) Si films on…”
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  5. 5

    Laser microchemical techniques for reversible restructuring of gate-array prototype circuits by Ehrlich, D.J., Tsao, J.Y., Silversmith, D.J., Sedlacek, J.H.C., Mountain, R.W., Graber, W.S.

    Published in IEEE electron device letters (01-02-1984)
    “…Laser direct-write Al etching and poly-Si deposition have been adapted to the mask-free alteration of simple gate-array test circuits. Simple test structures…”
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  6. 6

    Fully isolated lateral bipolar-MOS transistors fabricated in zone-melting-recrystallized Si films on SiO2 by Tsaur, B.-Y., Silversmith, D.J., Fan, J.C.C., Mountain, R.W.

    Published in IEEE electron device letters (01-08-1983)
    “…A four-terminal device that can be operated either as a lateral n-p-n bipolar transistor or as a conventional n-channel MOSFET has been fabricated in…”
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  7. 7

    Silicon graphoepitaxy using a strip-heater oven by Geis, M. W., Antoniadis, D. A., Silversmith, D. J., Mountain, R. W., Smith, Henry I.

    Published in Applied physics letters (01-09-1980)
    “…Silicon graphoepitaxy has been achieved using a strip-heater oven and a sample configuration consisting of a relief grating in a SiO2 substrate, a deposited…”
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  8. 8

    An abuttable CCD imager for visible and X-ray focal plane arrays by Burke, B.E., Mountain, R.W., Harrison, D.C., Bautz, M.W., Doty, J.P., Ricker, G.R., Daniels, P.J.

    Published in IEEE transactions on electron devices (01-05-1991)
    “…A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging…”
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  9. 9

    Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification by Tsaur, B-Y., Fan, John C. C., Geis, M. W., Silversmith, D. J., Mountain, R. W.

    Published in Applied physics letters (01-10-1981)
    “…Continuous single-crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly-Si films by the LESS technique (lateral…”
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  10. 10

    Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors by Geis, M.W., Chen, C.K., Mountain, R.W., Economou, N.P., Lindley, W.T., Hower, P.L.

    Published in IEEE electron device letters (01-01-1986)
    “…Three-dimensional (3-D) structures have been fabricated incorporating power bipolar transistors in a Si substrate and metal-oxide-semiconductor field-effect…”
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  11. 11

    n -channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2 by Tsaur, B-Y., Geis, M. W., Fan, John C. C., Silversmith, D. J., Mountain, R. W.

    Published in Applied physics letters (01-12-1981)
    “…n-channel deep-depletion mode metal-oxide-semiconductor field-effect transistors (MOSFET’s) have been fabricated in Si films prepared by zone-melting…”
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  12. 12

    Electron-beam programmable 128K-bit wafer-scale EPROM by Shaver, D.C., Mountain, R.W., Silversmith, D.J.

    Published in IEEE electron device letters (01-05-1983)
    “…The feasibility of using an electron beam to customize and repair a wafer-scale n MOS system has been demonstrated. As the test vehicle, a 128K-bit EPROM was…”
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  13. 13

    Effects of ionizing radiation on SOI/CMOS Devices fabricated in zone-melting-recrystallized Si films on SiO2 by Tsaur, B.-Y., Mountain, R.W., Chen, C.K., Turner, G.W., Fan, J.C.C.

    Published in IEEE electron device letters (01-01-1984)
    “…The effects of ionizing radiation on SOI/CMOS devices fabricated in zone-melting-recrystallized Si films on SiO 2 -coated Si substrates have been investigated…”
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  14. 14

    Direct-write metallization of Silicon MOSFET's using laser photodeposition by Tsao, J.Y., Ehrlich, D.J., Silversmith, D.J., Mountain, R.W.

    Published in IEEE electron device letters (01-06-1982)
    “…Gate electrodes of enhancement-mode silicon MOSFET's have been written directly using a new, mask-free laser photodeposition technique. Transistor…”
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  15. 15

    Merged CMOS/bipolar technologies utilizing zone-melting-recrystallized SOI films by Tsaur, B-Y., Mountain, R.W., Chen, C.K., Fan, J.C.C.

    Published in IEEE electron device letters (01-11-1984)
    “…Two merged CMOS/bipolar technologies utilizing SOI structures have been demonstrated. In each case a single sequence of processing steps was used to fabricate…”
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  16. 16

    SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates by Tsaur, B.Y., Fan, J.C.C., Chapman, R.L., Geis, M.W., Silversmith, D.J., Mountain, R.W.

    Published in IEEE electron device letters (01-12-1982)
    “…A CMOS test circuit chip containing six arrays of 360 to 533 parallel transistors, two 31-stage ring oscillators, and two inverter chains has been designed for…”
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  17. 17

    A technique for the determination of stress in thin films by Bromley, E. I., Randall, J. N., Flanders, D. C., Mountain, R. W.

    “…Intrinsic stress, elastic bulk modulus, and yield strength of thin films has been determined by measuring the deformation versus pressure of circular membranes…”
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  18. 18

    Fabrication of large-area CCD detectors on high-purity, float-zone silicon by Gregory, J.A., Burke, B.E., Cooper, M.J., Mountain, R.W., Kosicki, B.B.

    “…One of the problems with the fabrication of radiation detectors on high-purity, float-zone silicon is that such material is more susceptible to the formation…”
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    The focused ion beam as an integrated circuit restructuring tool by Melngailis, J., Musil, C. R., Stevens, E. H., Utlaut, M., Kellogg, E. M., Post, R. T., Geis, M. W., Mountain, R. W.

    “…One of the capabilities of focused ion beam systems is ion milling. The purpose of this work is to explore this capability as a tool for integrated circuit…”
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