Search Results - "Mounet, Christopher"

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  1. 1

    A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications by Siligaris, Alexandre, Richard, Olivier, Martineau, Baudouin, Mounet, Christopher, Chaix, Fabrice, Ferragut, Romain, Dehos, Cedric, Lanteri, Jérôme, Dussopt, Laurent, Yamamoto, Silas D., Pilard, Romain, Busson, Pierre, Cathelin, Andreia, Belot, Didier, Vincent, Pierre

    Published in IEEE journal of solid-state circuits (01-12-2011)
    “…A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is…”
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    Journal Article Conference Proceeding
  2. 2

    A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications by Siligaris, A, Richard, O, Martineau, B, Mounet, C, Chaix, F, Ferragut, R, Dehos, C, Lanteri, J, Dussopt, L, Yamamoto, S D, Pilard, R, Busson, P, Cathelin, A, Belot, D, Vincent, P

    “…This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is…”
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    Conference Proceeding
  3. 3

    A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI by Siligaris, Alexandre, Hamada, Yasuhiro, Mounet, Christopher, Raynaud, Christine, Martineau, Baudouin, Deparis, Nicolas, Rolland, Nathalie, Fukaishi, Muneo, Vincent, Pierre

    Published in IEEE journal of solid-state circuits (01-07-2010)
    “…A 60 GHz wideband power amplifier (PA) is fabricated in a standard CMOS SOI 65 nm process. The PA is based on two cascode stages. Input, output and inter-stage…”
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    Journal Article
  4. 4
  5. 5

    A synergistic fault tolerance framework for Mbit 28nm embedded RRAM by Panagiota, Papavramidou, Ricavy, Sebastien, Mounet, Christopher, Jahan, Carine, Castellani, Niccolo, Andrieu, Francois

    “…Resistive Random Access Memory (RRAM) technologies represent a promising frontier in next-generation non-volatile memory devices. They combine an operating…”
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    Conference Proceeding
  6. 6

    A frequency measurement BIST implementation targeting gigahertz application by Dubois, M., De Foucauld, E., Mounet, C., Dia, S., Mayor, C.

    Published in 2012 IEEE International Test Conference (01-11-2012)
    “…In this paper we present a Built-In Self-Test (BIST) technique to measure the natural resonance frequency of oscillators which are design to set a much higher…”
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    Conference Proceeding
  7. 7

    A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI by Siligaris, A., Hamada, Y., Mounet, C., Raynaud, C., Martineau, B., Deparis, N., Rolland, N., Fukaishi, M., Vincent, P.

    Published in 2009 Proceedings of ESSCIRC (01-09-2009)
    “…A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and…”
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    Conference Proceeding
  8. 8

    A BiCMOS upconverter with 1.9 GHz multiband frequency synthesizer for DVB-RCT application by de Foucauld, E., Billiot, G., Mounet, C.

    “…In this paper, we present an integrated upconversion stage including an integer-N synthesizer in a 0.35 /spl mu/m BiCMOS process. This chip is, to our…”
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    Conference Proceeding
  9. 9

    Employing 65 nm CMOS SOI for 60 GHz WPAN applications by Mounet, C., Siligaris, A., Michel, A., Capodiferro, M.

    “…In this paper the design flow of a 60 GHz LNA in a standard CMOS SOI technology is described. First the 60 GHz band opportunities for very high data rate…”
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    Conference Proceeding
  10. 10

    Digital Radio Front-End for High Data Rate Impulse UWB System by Morche, D., Hameau, F., Lachartre, D., Masson, G., Mounet, C., Pelissier, M., Helal, D., Smaini, L., Belot, D.

    “…This paper presents on overview of the two chip integration of a digital radio receiver for wireless communication systems based on ultra wideband (UWB)…”
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    Conference Proceeding