Search Results - "Mounet, Christopher"
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A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications
Published in IEEE journal of solid-state circuits (01-12-2011)“…A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is…”
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2
A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications
Published in 2011 IEEE International Solid-State Circuits Conference (01-02-2011)“…This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is…”
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Conference Proceeding -
3
A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI
Published in IEEE journal of solid-state circuits (01-07-2010)“…A 60 GHz wideband power amplifier (PA) is fabricated in a standard CMOS SOI 65 nm process. The PA is based on two cascode stages. Input, output and inter-stage…”
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Journal Article -
4
1.45-fJ/bit Access Two-Port SRAM Interfacing a Synchronous/Asynchronous IoT Platform for Energy-Efficient Normally Off Applications
Published in IEEE solid-state circuits letters (01-09-2018)“…This letter presents a single-rail two-port static random-access memory (SRAM) designed in 28-nm FD-SOI technology specifically for a synchronous/asynchronous…”
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5
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM
Published in 2024 IEEE 30th International Symposium on On-Line Testing and Robust System Design (IOLTS) (03-07-2024)“…Resistive Random Access Memory (RRAM) technologies represent a promising frontier in next-generation non-volatile memory devices. They combine an operating…”
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Conference Proceeding -
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A frequency measurement BIST implementation targeting gigahertz application
Published in 2012 IEEE International Test Conference (01-11-2012)“…In this paper we present a Built-In Self-Test (BIST) technique to measure the natural resonance frequency of oscillators which are design to set a much higher…”
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Conference Proceeding -
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A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI
Published in 2009 Proceedings of ESSCIRC (01-09-2009)“…A 60 GHz wideband power amplifier (PA) is fabricated in standard CMOS SOI 65 nm process. The PA is constituted by two cascode stages. Input, output and…”
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Conference Proceeding -
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A BiCMOS upconverter with 1.9 GHz multiband frequency synthesizer for DVB-RCT application
Published in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 (2005)“…In this paper, we present an integrated upconversion stage including an integer-N synthesizer in a 0.35 /spl mu/m BiCMOS process. This chip is, to our…”
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Employing 65 nm CMOS SOI for 60 GHz WPAN applications
Published in 2008 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (01-05-2008)“…In this paper the design flow of a 60 GHz LNA in a standard CMOS SOI technology is described. First the 60 GHz band opportunities for very high data rate…”
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10
Digital Radio Front-End for High Data Rate Impulse UWB System
Published in 2006 13th IEEE International Conference on Electronics, Circuits and Systems (01-12-2006)“…This paper presents on overview of the two chip integration of a digital radio receiver for wireless communication systems based on ultra wideband (UWB)…”
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Conference Proceeding