Search Results - "Moudakir, T."

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices by Srour, H., Salvestrini, J. P., Ahaitouf, A., Gautier, S., Moudakir, T., Assouar, B., Abarkan, M., Hamady, S., Ougazzaden, A.

“…Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors…”
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Bandgap energy bowing parameter of strained and relaxed InGaN layers by Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

“…This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm by Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

“…We report on the growth of Al sub(0.57)Ga sub(0.43)N/Al sub(0.38)Ga sub(0.63)N MQWs grown on a relaxed Al sub(0.58)Ga sub(0.42)N buffer on AlN template by…”
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Deep structural analysis of novel BGaN material layers grown by MOVPE by Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A.

“…BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated…”
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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE by Moudakir, T., Gautier, S., Suresh, S., Abid, M., El Gmili, Y., Patriarche, G., Pantzas, K., Troadec, D., Jacquet, J., Genty, F., Voss, P., Ougazzaden, A.

“…AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Bandgap bowing in BGaN thin films by Ougazzaden, A., Gautier, S., Moudakir, T., Djebbour, Z., Lochner, Z., Choi, S., Kim, H. J., Ryou, J.-H., Dupuis, R. D., Sirenko, A. A.

“…We report on the bandgap variation in thin films of B x Ga 1 − x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical…”
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Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth by Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A.

“…Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of…”
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Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells by Gorge, V., Migan-Dubois, A., Djebbour, Z., Pantzas, K., Gautier, S., Moudakir, T., Suresh, S., Ougazzaden, A.

“…► We have modeled a p–i–n InGaN-based solar cell with gradual bandgap layers. ► InGaN defects have been modeled by two band tails and one localized energy…”
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Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application by Abid, M., Moudakir, T., Djebbour, Z., Orsal, G., Gautier, S., En Naciri, A., Migan-Dubois, A., Ougazzaden, A.

“…B x Ga 1− x N layers as well as B x Ga 1− x N/GaN Distributed Bragg Reflector (DBR) structures were grown, for boron compositions between 0% and 1.3%, by…”
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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials by Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L., Ougazzaden, A.

“…In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a…”
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire by Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden, A.

“…GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a…”
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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates by Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., Chapman, J.N.

“…The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved…”
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Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm by Moudakir, T., Genty, F., Kunzer, M., Borner, P., Passow, T., Suresh, S., Patriarche, G., Kohler, K., Pletschen, W., Wagner, J., Ougazzaden, A.

“…We report on the realization and first demonstration of CW near-milliwatt-power emission at λ = 390 nm from resonant-cavity light-emitting diode (RCLED) on GaN…”
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Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction by Bonanno, P.L., Gautier, S., Gmili, Y.El, Moudakir, T., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Martin, J., Goh, W.H., Martinez, A., Ramdane, A., Le Gratiet, L., Maloufi, N., Assouar, M.B., Ougazzaden, A.

“…Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition…”
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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content by Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A.

“…BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy…”
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CuIn1−x GaxS2 wide gap absorbers grown by close-spaced vapor transport by Moudakir, T., Djessas, K., Massé, G.

“…CuIn1−xGaxS2 wide gap absorber thin films were grown by means of a low cost method using the close-spaced vapor transport principle. No high-cost vacuum…”
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