Search Results - "Mouawad, Bassem"
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1
Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-04-2012)“…Planar structures, in which a power die is soldered on a substrate and wirebonds are used to connect the top of the die with the substrate, are limited in…”
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Journal Article -
2
10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field
Published in IEEE transactions on power electronics (01-06-2020)“…The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems…”
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Journal Article -
3
Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling
Published in 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) (01-05-2018)“…Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their…”
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Conference Proceeding -
4
Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling
Published in Journal of electronic materials (01-03-2024)“…This paper deals with the performance of sintered nano-silver bonds used as wide-bandgap power module die attachment technology. The paper specifically…”
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5
Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-05-2018)“…Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel…”
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Conference Proceeding -
6
Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module
Published in IEEE journal of emerging and selected topics in power electronics (01-03-2020)“…Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their…”
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Journal Article -
7
Tailoring the microstructure and the mechanical properties of ultrafine grained high strength ferritic steels by powder metallurgy
Published in Journal of nuclear materials (01-10-2015)“…Three model powder materials (i) atomized, (ii) atomized + milled, and, (iii) atomized + milled + alloyed with yttria (Y sub(2)O sub(3)) and titanium were…”
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Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-05-2018)“…High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of…”
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Conference Proceeding -
9
Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates
Published in IEEE journal of emerging and selected topics in power electronics (01-08-2021)“…Heterogeneous integration and the converter in package concept have been highlighted as enabling technologies to unlock the full potential of silicon carbide…”
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Journal Article -
10
Packaging degradation studies of High Temperature SiC MOSFET discrete packages
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-09-2020)“…Silicon Carbide discrete packages with high temperature capabilities have been used to study the package degradation. Power Cycling test and thermal cycling…”
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Conference Proceeding -
11
A thermal cycling reliability study of ultrasonically bonded copper wires
Published in Microelectronics and reliability (01-04-2016)“…In this work we report on a reliability investigation regarding heavy copper wires ultrasonically bonded onto active braze copper substrates. The results…”
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Journal Article -
12
Hybrid half-bridge package for high voltage application
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01-06-2016)“…3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a…”
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Conference Proceeding Journal Article -
13
Full Densification of Molybdenum Powders Using Spark Plasma Sintering
Published in Metallurgical and materials transactions. A, Physical metallurgy and materials science (01-09-2012)“…Pure molybdenum powder was sintered using spark plasma sintering (SPS) under various temperatures and holding times, under a pressure of 77 MPa and a heating…”
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Journal Article -
14
Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-01-2015)“…3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a…”
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Journal Article -
15
Packaging for fast switching power electronics
Published in 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP) (26-11-2023)“…This work investigates printed circuit board embedding of the power devices in order to support low inductance, fast switching package designs. The embedding…”
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Conference Proceeding -
16
Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01-06-2012)“…Silicon Carbide (SiC) is a good candidate for high temperature power electronic applications. To ensure good reliability, packaging materials with a…”
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Conference Proceeding -
17
Novel Silicon Carbide Integrated Power Module for EV application
Published in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) (01-05-2018)“…The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high…”
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Conference Proceeding -
18
A novel manufacturing technique for integrating magnetic components windings on power module substrates
Published in 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) (01-09-2019)“…In this paper a novel manufacturing technique is investigated with the aim of integrating magnetic components (e.g. inductors and transformer) on power module…”
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Conference Proceeding -
19
3.3 kV SiC JBS diode configurable rectifier module
Published in 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) (01-09-2017)“…This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge…”
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Conference Proceeding -
20
Design of a novel, high-density, high-speed 10 kV SiC MOSFET module
Published in 2017 IEEE Energy Conversion Congress and Exposition (ECCE) (01-10-2017)“…High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of…”
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Conference Proceeding