Search Results - "Mouawad, Bassem"

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  1. 1

    Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding by Mouawad, B., Soueidan, M., Fabregue, D., Buttay, C., Allard, B., Bley, V., Morel, H., Martin, C.

    “…Planar structures, in which a power die is soldered on a substrate and wirebonds are used to connect the top of the die with the substrate, are limited in…”
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    Journal Article
  2. 2

    10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field by DiMarino, Christina M., Mouawad, Bassem, Johnson, C. Mark, Boroyevich, Dushan, Burgos, Rolando

    Published in IEEE transactions on power electronics (01-06-2020)
    “…The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems…”
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    Journal Article
  3. 3

    Multi-Chip SiC MOSFET Power Modules for Standard Manufacturing, Mounting and Cooling by Castellazzi, Alberto, Fayyaz, Asad, Gurpinar, Emre, Hussein, Abdallah, Jianfeng Li, Mouawad, Bassem

    “…Taking full advantage of the superior characteristics of SiC Power MOSFETs in the application requires the development of bespoke packaging solutions. Their…”
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    Conference Proceeding
  4. 4

    Microstructural Response of Highly Porous Sintered Nano-silver Particle Die Attachments to Thermomechanical Cycling by Agyakwa, Pearl A., Robertson, Stuart, Dai, Jingru, Mouawad, Bassem, Zhou, Zhaoxia, Liu, Changqing, Johnson, C. Mark

    Published in Journal of electronic materials (01-03-2024)
    “…This paper deals with the performance of sintered nano-silver bonds used as wide-bandgap power module die attachment technology. The paper specifically…”
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    Journal Article
  5. 5

    Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling by Hussein, Abdallah, Mouawad, Bassem, Castellazzi, Alberto

    “…Recently, 3.3 and 6.5 kV power MOSFETs have been introduced. Based on the 3.3 kV device, a 100 A half-bridge power module has been developed, using parallel…”
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    Conference Proceeding
  6. 6

    Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module by DiMarino, Christina, Mouawad, Bassem, Johnson, C. Mark, Wang, Meiyu, Tan, Yan-Song, Lu, Guo-Quan, Boroyevich, Dushan, Burgos, Rolando

    “…Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their…”
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    Journal Article
  7. 7

    Tailoring the microstructure and the mechanical properties of ultrafine grained high strength ferritic steels by powder metallurgy by Mouawad, B, Boulnat, X, Fabregue, D, Perez, M, de Carlan, Y

    Published in Journal of nuclear materials (01-10-2015)
    “…Three model powder materials (i) atomized, (ii) atomized + milled, and, (iii) atomized + milled + alloyed with yttria (Y sub(2)O sub(3)) and titanium were…”
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    Journal Article
  8. 8

    Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system by Mouawad, Bassem, Skuriat, Robert, Li, Jianfeng, Johnson, C. Mark, DiMarino, Christina

    “…High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of…”
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    Conference Proceeding
  9. 9

    Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates by Stratta, Andrea, Mouawad, Bassem, Antonini, Mattia, De Lillo, Liliana, Empringham, Lee, Johnson, Mark C.

    “…Heterogeneous integration and the converter in package concept have been highlighted as enabling technologies to unlock the full potential of silicon carbide…”
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    Journal Article
  10. 10

    Packaging degradation studies of High Temperature SiC MOSFET discrete packages by Mouawad, Bassem, Yang, Li, Agyakwa, Pearl, Corfield, Martin, Johnson, C. Mark

    “…Silicon Carbide discrete packages with high temperature capabilities have been used to study the package degradation. Power Cycling test and thermal cycling…”
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    Conference Proceeding
  11. 11

    A thermal cycling reliability study of ultrasonically bonded copper wires by Arjmand, Elaheh, Agyakwa, Pearl A., Corfield, Martin R., Li, Jianfeng, Mouawad, Bassem, Mark Johnson, C.

    Published in Microelectronics and reliability (01-04-2016)
    “…In this work we report on a reliability investigation regarding heavy copper wires ultrasonically bonded onto active braze copper substrates. The results…”
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    Journal Article
  12. 12

    Hybrid half-bridge package for high voltage application by Mouawad, Bassem, Jianfeng Li, Castellazzi, Alberto, Johnson, C. Mark

    “…3D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a…”
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    Conference Proceeding Journal Article
  13. 13

    Full Densification of Molybdenum Powders Using Spark Plasma Sintering by Mouawad, B., Soueidan, M., Fabrègue, D., Buttay, C., Bley, V., Allard, B., Morel, H.

    “…Pure molybdenum powder was sintered using spark plasma sintering (SPS) under various temperatures and holding times, under a pressure of 77 MPa and a heating…”
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    Journal Article
  14. 14

    Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test by Mouawad, Bassem, Thollin, Benoit, Buttay, Cyril, Dupont, Laurent, Bley, Vincent, Fabregue, Damien, Soueidan, Maher, Schlegel, Benoit, Pezard, Julien, Crebier, Jean-Christophe

    “…3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a…”
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    Journal Article
  15. 15

    Packaging for fast switching power electronics by Marchant, Stewart, Dai, Jingru, Mouawad, Bassem, Empringham, Lee, Clare, Jon

    “…This work investigates printed circuit board embedding of the power devices in order to support low inductance, fast switching package designs. The embedding…”
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    Conference Proceeding
  16. 16

    Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications by Mouawad, Bassem, Buttay, C., Soueidan, M., Morel, H., Bley, V., Fabregue, D., Mercier, F.

    “…Silicon Carbide (SiC) is a good candidate for high temperature power electronic applications. To ensure good reliability, packaging materials with a…”
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    Conference Proceeding
  17. 17

    Novel Silicon Carbide Integrated Power Module for EV application by Mouawad, Bassem, Espina, Jordi, Li, Jianfeng, Empringham, Lee, Johnson, C. Mark

    “…The successful penetration of Electric Vehicles (EVs) into the global automotive markets requires the developments of cost effective, high performance and high…”
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    Conference Proceeding
  18. 18

    A novel manufacturing technique for integrating magnetic components windings on power module substrates by Stratta, Andrea, Mouawad, Bassem, Ahmadi, Behzad, de Lillo, Liliana, Empringham, Lee, Johnson, Mark

    “…In this paper a novel manufacturing technique is investigated with the aim of integrating magnetic components (e.g. inductors and transformer) on power module…”
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    Conference Proceeding
  19. 19

    3.3 kV SiC JBS diode configurable rectifier module by Mouawad, Bassem, Zhenyu Wang, Buettner, Jonas, Castellazzi, Alberto

    “…This paper presents the use of innovative high-voltage SiC diode technology in the development of a user configurable full-wave or half-wave rectifier bridge…”
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    Conference Proceeding
  20. 20

    Design of a novel, high-density, high-speed 10 kV SiC MOSFET module by DiMarino, Christina, Johnson, Mark, Mouawad, Bassem, Jianfeng Li, Boroyevich, Dushan, Burgos, Rolando, Guo-Quan Lu, Meiyu Wang

    “…High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of…”
    Get full text
    Conference Proceeding