Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C

The effect of stress stimulation on gold (Au) induced lateral crystallization (GILC) of amorphous Ge on insulating substrates is investigated. As a result, the GILC is significantly enhanced by using compressive residual stresses of up to 200 MPa in TEOS-SiO2. In addition, it is found that the annea...

Full description

Saved in:

Bibliographic Details
Published in:	AIP advances Vol. 10; no. 5; pp. 055306 - 055306-6
Main Authors:	Nishijima, Taiki, Shimizu, Satoshi, Kusano, Kinta, Kudo, Kazuki, Furuta, Masahiro, Kusuda, Yutaka, Motoyama, Shinichi, Naka, Nobuyuki, Numata, Tomoko, Takakura, Kenichiro, Tsunoda, Isao
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 01-05-2020 AIP Publishing LLC
Subjects:	Annealing Compressive properties Crystallization Electronic devices Low temperature Residual stress Silicon dioxide Stimulation Substrates
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	The effect of stress stimulation on gold (Au) induced lateral crystallization (GILC) of amorphous Ge on insulating substrates is investigated. As a result, the GILC is significantly enhanced by using compressive residual stresses of up to 200 MPa in TEOS-SiO2. In addition, it is found that the annealing temperature necessary to cause the GILC for a short annealing time (60 min) can be decreased to 130 °C. We have demonstrated that the GILC enhancement was caused by the stress stimulation contributed to bond rearrangement and Au easily diffused into Ge. This study proposes a unique low temperature crystallization technique that introduces a residual film stress on metal induced lateral crystallization, paving the way for the low-cost fabrication of flexible electronic devices on low-softening temperature plastic substrates.
ISSN:	2158-3226 2158-3226
DOI:	10.1063/5.0004326