Plasma-enhanced chemical vapor deposition of GaxS1−x thin films: structural and optical properties

Plasma-enhanced chemical vapor deposition of GaxS1−x thin films: structural and optical properties

Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide Ga x S 1−x were prepared for the first time by plasma-enhan...

Full description

Saved in:
Bibliographic Details
Published in:Optical and quantum electronics Vol. 55; no. 10
Main Authors: Mochalov, Leonid, Kudryashov, Mikhail, Vshivtsev, Maksim, Prokhorov, Igor, Kudryashova, Yuliya, Mosyagin, Pavel, Slapovskaya, Ekaterina
Format: Journal Article
Language:English
Published: New York Springer US 01-10-2023
Springer Nature B.V
Subjects:
Characterization and Evaluation of Materials
Chlorine
Computer Communication Networks
Electrical Engineering
Energy storage
Gallium
Lasers
Low temperature
Nonlinear optics
Optical Devices
Optical properties
Optics
Optoelectronics
Photonics
Photovoltaic cells
Physics
Physics and Astronomy
Plasma enhanced chemical vapor deposition
Radio frequency discharge
Thin films
Thin films
Gallium sulfide
PECVD
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Gallium sulfides are wide-gap materials (band gap in the range of 2.85–3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide Ga x S 1−x were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. Ga x S 1−x films have sufficiently high transparency in the visible and near-IR ranges (up to 70%).
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-023-05165-1