Search Results - "Mosidze, L."
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Zinc diffusion from a reactively sputtered glass source in GaAs
Published in 1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings (1997)“…A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion…”
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Conference Proceeding -
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Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications
Published in 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings (1996)“…Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N)…”
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Conference Proceeding