Search Results - "Moser, N.A."
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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer
Published in IEEE microwave and wireless components letters (01-12-2006)“…IV knee walk-out in AlGaN/GaN high electron mobility transistors (HEMTs) on a Sapphire substrate is analyzed using dynamic radio frequency (RF) load-lines…”
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High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
Published in IEEE electron device letters (01-11-2003)Get full text
Journal Article -
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Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing
Published in 2021 Device Research Conference (DRC) (20-06-2021)“…Development of electronic-grade gate dielectrics with negligible hysteresis, low interface defect density (N IT ), reduced gate leakage and high breakdown…”
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Conference Proceeding -
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High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
Published in IEEE electron device letters (01-11-2003)“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The…”
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Journal Article -
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High performance 0.14 [micro]m gate-length AlGaN/GaN power HEMTs on SiC
Published in IEEE electron device letters (01-11-2003)Get full text
Journal Article -
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Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts
Published in 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003 (2003)“…High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with WSi, Ir, Pd, and Ni Schottky contacts. The…”
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Conference Proceeding