Search Results - "Moorhem, E. Van"

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates by De Jaeger, B., Bonzom, R., Leys, F., Richard, O., Steenbergen, J. Van, Winderickx, G., Moorhem, E. Van, Raskin, G., Letertre, F., Billon, T., Meuris, M., Heyns, M.

“…A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-k dielectric deposition to obtain low…”
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Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line by De Jaeger, B., Houssa, M., Satta, A., Kubicek, S., Verheyen, P., Van Steenbergen, J., Croon, J., Kaczer, B., Van Elshocht, S., Delabie, A., Kunnen, E., Sleeckx, E., Teerlinck, I., Lindsay, R., Schram, T., Chiarella, T., Degraeve, R., Conard, T., Poortmans, J., Winderickx, G., Boullart, W., Schaekers, M., Mertens, P.W., Caymax, M., Vandervorst, W., Van Moorhem, E., Biesemans, S., De Meyer, K., Ragnarsson, L., Lee, S., Kota, G., Raskin, G., Mijlemans, P., Autran, J.-L., Afanas'ev, V., Stesmans, A., Meuris, M., Heyns, M.

“…We report for the first time on deep sub-micron Ge pFETs with physical gate lengths down to 0.151 /spl mu/m. The devices are made using a silicon-like process…”
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The future of high- K on pure germanium and its importance for Ge CMOS by Meuris, M., Delabie, A., Van Elshocht, S., Kubicek, S., Verheyen, P., De Jaeger, B., Van Steenbergen, J., Winderickx, G., Van Moorhem, E., Puurunen, R.L., Brijs, B., Caymax, M., Conard, T., Richard, O., Vandervorst, W., Zhao, C., De Gendt, S., Schram, T., Chiarella, T., Onsia, B., Teerlinck, I., Houssa, M., Mertens, P.W., Raskin, G., Mijlemans, P., Biesemans, S., Heyns, M.M.

“…A comparison between atomic layer chemical vapor deposition (ALCVD) and metal organic chemical vapor deposition (MOCVD) HfO 2 layers on Ge indicate that ALCVD…”
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Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference by DeJaeger, B., Kaczer, B., Zimmerman, P., Opsomer, K., Winderickx, G., Van Steenbergen, J., Van Moorhem, E., Bonzom, R., Leys, F., Arena, C., Bauer, M., Werkhoven, C., Meuris, M., Heyns, M.

“…This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is…”
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