Search Results - "Moon, J.E."

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    Merits and potential downsides of the 2013 ACC/AHA cholesterol management guidelines by Gotto, A.M, Moon, J.E

    “…Abstract New guidelines from the American College of Cardiology and the American Heart Association on cholesterol management introduced substantial changes…”
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    Journal Article
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    Sero-epidemiology of hepatitis A virus infection among healthcare workers in Korean hospitals by Jung, S.-I, Lee, C.-S, Park, K.-H, Kim, E.S, Kim, Y.J, Kim, G.S, Lim, D.S, Moon, J.E, Min, J.J, Bom, H.S, Jung, M.-H, Chang, Y.J, Chae, S.L, Lee, J.H

    Published in The Journal of hospital infection (01-07-2009)
    “…Summary Hepatitis A virus (HAV) has been increasingly reported in Korea as has an outbreak in Korean healthcare workers (HCWs). This 2008 study evaluated the…”
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    Journal Article
  4. 4

    Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model by Parke, S.A., Moon, J.E., Wann, H.C., Ko, P.K., Hu, C.

    Published in IEEE transactions on electron devices (01-07-1992)
    “…A systematic study of gate-induced drain leakage (GIDL) in single-diffusion drain (SD), lightly doped drain (LDD), and fully gate-overlapped LDD (GOLD)…”
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    Journal Article
  5. 5

    A Phase 1 clinical trial of Hantaan virus and Puumala virus M-segment DNA vaccines for haemorrhagic fever with renal syndrome delivered by intramuscular electroporation by Hooper, J.W., Moon, J.E., Paolino, K.M., Newcomer, R., McLain, D.E., Josleyn, M., Hannaman, D., Schmaljohn, C.

    Published in Clinical microbiology and infection (01-05-2014)
    “…Haemorrhagic fever with renal syndrome (HFRS) is endemic in Asia, Europe and Scandinavia, and is caused by infection with the hantaviruses Hantaan (HTNV),…”
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    Journal Article
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    Performance and reliability design issues for deep-submicrometer MOSFETs by Chung, J.E., Jeng, M.-C., Moon, J.E., Ko, P.-K., Hu, C.

    Published in IEEE transactions on electron devices (01-03-1991)
    “…Device design constraints, such as threshold voltage variation due to short-channel and drain-induced-barrier-lowering effects, off-state leakage current due…”
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    Journal Article
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    Impact of asymmetric metal coverage on high performance MOSFET mismatch by Fukumoto, Jay, Das, Tejasvi, Paradis, Ken, Burleson, Jeff, Moon, J.E., Mukund, P.R.

    Published in Solid-state electronics (01-10-2004)
    “…Device mismatch is responsible for significant performance degradation of integrated RF transceivers and differential circuits in digital systems…”
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    Journal Article
  9. 9

    Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs by Chung, J.E., Jeng, M.-C., Moon, J.E., Ko, P.-K., Hu, C.

    Published in IEEE transactions on electron devices (01-07-1990)
    “…Hot-electron currents and degradation in deep submicrometer MOSFETs at 3.3 V and below are studied. Using a device with L/sub eff/=0.15 mu m and T/sub ox/=7.5…”
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    Journal Article
  10. 10

    Scaling the bulk-driven MOSFET by Urban, C., Moon, J.E., Mukund, P.R.

    “…This paper investigates the impact of device scaling on the bulk-driven MOSFET. In particular, the behavior of g mb is observed across process technology and…”
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    Conference Proceeding
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    Designing bulk-driven MOSFETs in scaled technologies by Urban, C., Moon, J.E., Mukund, P.R.

    “…This paper has presented simulation results which show that delta doping is capable of significantly improving g mb (and thus, the intrinsic gain) in a BD…”
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    Conference Proceeding
  12. 12

    Deep-submicrometer MOS device fabrication using a photoresist-ashing technique by Chung, J., Jeng, M., Moon, J.E., Wu, A.T., Chan, T.Y., Ko, P.K., Hu, C.

    Published in IEEE electron device letters (01-04-1988)
    “…A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition…”
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    Journal Article
  13. 13

    Design and simulation of strained Si/SiGe dual channel MOSFETs by Goyal, P., Moon, J.E., Kurinec, S.K.

    “…This paper reports the design, modeling and simulation of NMOS and PMOS transistors with a tensile strained Si channel layer and compressively strained SiGe…”
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    Conference Proceeding
  14. 14

    A new LDD structure: total overlap with polysilicon spacer (TOPS) by Moon, J.E., Garfinkel, T., Chung, J., Wong, M., Ko, P.K., Hu, C.

    Published in IEEE electron device letters (01-05-1990)
    “…The total overlap with polysilicon spacer (TOPS) structure, a fully overlapped lightly doped drain (LDD) structure, is discussed. The TOPS structure achieves…”
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    Journal Article
  15. 15

    Impact of asymmetric metal coverage on high performance MOSFET mismatch by Fukumoto, J., Burleson, J., Das, T., Moon, J.E., Mukund, P.R.

    “…This paper presents a comprehensive study of the impact of asymmetric metal coverage on matched high performance MOSFET pairs for applications. Test structures…”
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    Conference Proceeding
  16. 16

    A deep-submicrometer raised source/drain LDD structure fabricated using hot-wall epitaxy by Moon, J.E., Galewski, C., Garfinkel, T., Wong, M., Oldham, W.G., Ko, P.K., Hu, C.

    “…An elevated LDD (ELDD) structure has been designed, fabricated, and evaluated. A hot-wall reactor was used to selectively grow epitaxial silicon in the regions…”
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    Conference Proceeding
  17. 17

    Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs by Chung, J., Jeng, M., Moon, J.E., Ko, P.K., Hu, C.

    “…Hot-electron degradation in deep-submicrometer MOSFETs at 3.3 V and below is studied. Using a device with L/sub eff/=0.1 mu m and T/sub ox/=75 AA, substrate…”
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    Conference Proceeding
  18. 18

    Design guidelines for deep-submicrometer MOSFETs by Jeng, M., Chung, J., Moon, J.E., May, G., Ko, P.K., Hu, C.

    “…A comprehensive study of the performance and reliability constraints on the dimensions and power supply of deep-submicrometer non-LDD (lightly doped drain)…”
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    Conference Proceeding