Search Results - "Moon, Bum Ki"
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1
Integrated on-chip energy storage using passivated nanoporous-silicon electrochemical capacitors
Published in Nano energy (01-07-2016)“…Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, sensing, and wearables; capacitors being…”
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2
Open air plasma chemical vapor deposition of highly dielectric amorphous TiO2 films
Published in Applied physics letters (20-05-1996)“…By using the cold plasma torch we developed, TiO2 films were deposited on substrates exposed to air by feeding Ti(OEt)4 into the plasma. XPS and x-ray analyses…”
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3
Growth of Crystalline SrTiO 3 Films on Si Substrates Using Thin Fluoride Buffer Layers and Their Electrical Properties
Published in Japanese Journal of Applied Physics (01-10-1994)“…Strontium titanate ( SrTiO 3 : STO) films were grown epitaxially on Si (111) and (100) substrates using thin SrF 2 buffer layers. The SrF 2 buffer layer was…”
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4
Roles of Buffer Layers in Epitaxial Growth of SrTiO 3 Films on Silicon Substrates
Published in Japanese Journal of Applied Physics (01-03-1994)“…Heteroepitaxial growth of SrTiO 3 (STO) films with and without buffer layers on Si(100) and (111) substrates has been conducted by a focused electron beam…”
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5
Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01-12-2018)“…The characteristics of Stacked Nanosheet are investigated, focusing on channel geometry. For the first time, "narrow sheet effect" on carrier transport is…”
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6
Roles of buffer layers in epitaxial growth of SrTiO3 films on silicon substrates
Published in Japanese journal of applied physics (1994)Get full text
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7
High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01-12-2017)“…In this paper, we report multi-threshold-voltage (multi-Vt) options for stacked Nanosheet gate-all-around (GAA) transistors. V t can be modulated through…”
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Conference Proceeding -
8
Growth of crystalline SrTiO3 films on Si substrates using thin fluoride buffer layers and their electrical properties
Published in Japanese journal of applied physics (01-10-1994)Get full text
Journal Article -
9
Leakage issues in failure analysis of p+ SiGe active area short monitor
Published in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01-07-2011)“…During technology development, leakage during inline or bench test of a p+ SiGe active areas short monitor structures may produce false short signal or hide…”
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10
Formation and Characterization of Epitaxial TiO 2 and BaTiO 3 /TiO 2 Films on Si Substrate
Published in Japanese Journal of Applied Physics (01-02-1995)“…Rutile-phase TiO 2 films were epitaxially grown on Si(100) substrates by oxidizing epitaxial TiN films grown by KrF pulsed excimer laser deposition. The TiO 2…”
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11
LEAD CONTENT CONTROL IN (Pb, La)(Zr, Ti)O3 FILMS USING Ar/O2 SEQUENTIAL RAPID THERMAL PROCESS
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 2, pp. 695-698. 2004 (01-02-2004)“…A new method of controlling the Pb profile in (Pb, La)(Zr, Ti)O3 (PLZT) capacitor films with top and bottom SrRuO3 (SRO) electrodes has been developed using an…”
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12
Preparation of Ultra thin SrBi 2 Ta 2 O 9 Films Using Metalorganic Chemical Vapor Deposition Combined with a Modified Annealing Method
Published in Japanese Journal of Applied Physics (01-02-2001)“…We report a capacitor-preparation method using an ultra thin SrBi 2 Ta 2 O 9 (SBT) film for application to low-voltage-operated ferroelectric random-access…”
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13
Lead Content Control in (Pb, La)(Zr, Ti)O 3 Films Using Ar/O 2 Sequential Rapid Thermal Process
Published in Japanese Journal of Applied Physics (01-02-2004)Get full text
Journal Article -
14
PREPARATION OF ULTRA THIN SrBi2Ta2O9 FILMS USING METALORGANIC CHEMICAL VAPOR DEPOSITION COMBINED WITH A MODIFIED ANNEALING METHOD
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 2A, pp. 680-686. 2001 (2001)“…Authors report a capacitor-preparation method using an ultra thin SrBi2Ta2O9 (SBT) film for application to low-voltage-operated ferroelectric random-access…”
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15
Roles of buffer layers in epitaxial growth of SrTiO sub(3) films on silicon substrates
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01-01-1994)“…Heteroepitaxial growth of SrTiO sub(3) (STO) films with and without buffer layers on Si(100) and (111) substrates has been conducted by a focused electron beam…”
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Journal Article -
16
Crystalline quality and electrical properties of PbZr(x)Ti(1-x)O3 thin films prepared on SrTiO3-covered Si substrates
Published in Japanese Journal of Applied Physics (01-09-1995)“…We report the crystalline quality and electrical properties of PbZr(x)Ti(1-x)O3 (PZT) films grown on Si substrates with a SrTiO3 (STO) buffer layer. STO buffer…”
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17
Crystalline Quality and Electrical Properties of PbZr x Ti 1-x O 3 Thin Films Prepared on SrTiO 3 -Covered Si Substrates
Published in Japanese Journal of Applied Physics (01-09-1995)“…We report the crystalline quality and electrical properties of PbZr x Ti 1- x O 3 (PZT) films grown on Si substrates with a SrTiO 3 (STO) buffer layer. STO…”
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Journal Article -
18
Crystalline quality and electrical properties of PbZrαTi1-xO3 thin films prepared on SrTiO3-covered Si substrates
Published in Japanese journal of applied physics (1995)Get full text
Conference Proceeding