Thickness-dependent microstructure, resistive switching, ferroelectric, and energy storage properties of pulsed laser deposited 0.85[0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 thin films

In this work, we have studied the effect of thickness on structural, morphological, resistive switching (RS), ferroelectric, and energy storage properties of 0.85[0.6Ba (Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 (BZCT-STO) thin films deposited by the pulsed laser deposition technique. X-ray diff...

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Bibliographic Details
Published in:	Ceramics international Vol. 49; no. 12; pp. 20756 - 20762
Main Authors:	Tasneem, Muhassinah, Monteiro, Carlos R.P., Kumar, N.S. Kiran, Silva, J.P.B., Sekhar, K.C., Kamakshi, K., Pereira, M.
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 15-06-2023 Elsevier
Subjects:	BZCT-STO thin Films Ciências Físicas Ciências Naturais Energy storage performance Ferroelectric Interface layer Resistive switching Size effect Ferroelectric Interface layer BZCT-STO thin Films Energy storage performance Size effect Resistive switching
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Summary:	In this work, we have studied the effect of thickness on structural, morphological, resistive switching (RS), ferroelectric, and energy storage properties of 0.85[0.6Ba (Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 (BZCT-STO) thin films deposited by the pulsed laser deposition technique. X-ray diffraction (XRD) analysis suggests that BZCT-STO thin films exhibit a polycrystalline tetragonal structure. The lattice parameters and tetragonality ratio approaching to bulk value with an increase of thickness, confirm strain relaxation in thicker films. SEM analysis reveals a dense columnar structure with a different grain size that varies from 3 nm to 60 nm as thickness increased from 160 to 360 nm. The P-E loops suggest that the relaxor behaviour increases with a decrease of thickness due to interface low dielectric layer, substrate clamping effect, small grain size, and high back switching ratio. The RS effect observed in Pt/BZCT-STO/Au capacitors is attributed to polarization modulation of the Schottky barrier and is found to be significant at low thickness. The effect of electric field and frequency on energy storage properties of BZCT-STO films is also investigated. The Pt/BZCT-STO/Au capacitor with a thickness of 160 nm exhibited 6.0 J/cm3 with an efficiency of 72% at a field of 800 kV/cm. It also exhibited a robust energy storage performance in the frequency range of 50–2000 Hz and also up to 108 cycles passing through the capacitor.
ISSN:	0272-8842 1873-3956
DOI:	10.1016/j.ceramint.2023.03.207