Search Results - "Monroy, E."

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  1. 1

    Differences between heterogenous and homogenous slip in regional tsunami hazards modelling by Melgar, Diego, Williamson, Amy L, Salazar-Monroy, E Fernando

    Published in Geophysical journal international (01-10-2019)
    “…Summary The homogenous slip finite fault model is commonly used in tsunami hazards for a variety of applications. These include early warning and short-term…”
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    Trace element release from combustion ash co-disposed with municipal solid waste by Monroy Sarmiento, Linda E., Clavier, Kyle A., Townsend, Timothy G.

    Published in Chemosphere (Oxford) (01-08-2020)
    “…Ash products from coal and municipal solid waste combustion constitute a waste stream with characteristics that, unless recycled, require specific disposal…”
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  3. 3

    Gallium kinetics on m-plane GaN by Lim, C. B., Ajay, A., Monroy, E.

    Published in Applied physics letters (10-07-2017)
    “…In this paper, we study the adsorption/desorption kinetics of gallium on (1-100) m-GaN during molecular-beam epitaxy on bulk substrates. We demonstrate the…”
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  4. 4

    Room-Temperature Photodetection Dynamics of Single GaN Nanowires by González-Posada, F, Songmuang, R, Den Hertog, M, Monroy, E

    Published in Nano letters (11-01-2012)
    “…We report on the photocurrent behavior of single GaN n–i–n nanowires (NWs) grown by plasma-assisted molecular-beam epitaxy on Si(111). These structures present…”
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  5. 5

    Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors by Cuesta, S, Spies, M, Boureau, V, Donatini, F, Hocevar, M, den Hertog, M. I, Monroy, E

    Published in Nano letters (14-08-2019)
    “…We present a comprehensive study of the performance of GaN single-nanowire photodetectors containing an axial p–n junction. The electrical contact to the p…”
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  6. 6

    Effect of the quantum well thickness on the performance of InGaN photovoltaic cells by Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.

    Published in Applied physics letters (29-09-2014)
    “…We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar…”
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  7. 7

    Performance enhancement of an ultrafast all-fiber laser based on an InN saturable absorber using GRIN coupling by Monroy, L., Soriano-Amat, M., Esteban, Ó., Monroy, E., González-Herráez, M., Naranjo, F. B.

    Published in Optics express (30-08-2021)
    “…Indium nitride (InN)-based semiconductor saturable absorbers have previously shown advantages for application in near-IR fiber lasers due to their broad…”
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  8. 8

    Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap by Jayaprakash, R., Kalaitzakis, F. G., Christmann, G., Tsagaraki, K., Hocevar, M., Gayral, B., Monroy, E., Pelekanos, N. T.

    Published in Scientific reports (17-07-2017)
    “…Polariton lasers are coherent light sources based on the condensation of exciton-polaritons in semiconductor microcavities, which occurs either in the kinetic…”
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    Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires by Songmuang, R, Katsaros, G, Monroy, E, Spathis, P, Bougerol, C, Mongillo, M, De Franceschi, S

    Published in Nano letters (08-09-2010)
    “…We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted…”
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  11. 11

    Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors by Joglekar, S., Azize, M., Beeler, M., Monroy, E., Palacios, T.

    Published in Applied physics letters (25-07-2016)
    “…Ohmic contacts fabricated by regrowth of n+ GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility…”
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  12. 12

    Use of a recombinant positive control in the diagnostic of canine Ehrlichiosis from 16sRNA gen of Ehrlichia canis in Mexico City by Acevedo-Monroy, S. E., Méndez-Alemán, J. M., Castro-Mendoza, I., Mojica-Sánchez, M. A., Verdugo-Rodríguez, A.

    Published in Archives of microbiology (01-10-2022)
    “…Ehrlichia canis has gained importance over the years as a zoonotic bacterium, nevertheless in Mexico is unknown the extent of the problem in animals and public…”
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  13. 13

    HDBRR: a statistical package for high-dimensional Bayesian ridge regression without MCMC by Pérez-Elizalde, Sergio, Monroy-Castillo, Blanca E., Pérez-Rodríguez, Paulino, Crossa, José

    “…Ridge regression dealswith collinearity in the homoscedastic linear regression model. When the number of predictors (p) is much larger than the number of…”
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  14. 14

    Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors by den Hertog, M. I, González-Posada, F, Songmuang, R, Rouviere, J. L, Fournier, T, Fernandez, B, Monroy, E

    Published in Nano letters (14-11-2012)
    “…GaN nanowires (NWs) with an AlN insertion were studied by correlated optoelectronic and aberration-corrected scanning transmission electron microscopy (STEM)…”
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  15. 15

    Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design by Beeler, M., Bougerol, C., Bellet-Amalric, E., Monroy, E.

    Published in Applied physics letters (26-08-2013)
    “…We report on AlGaN/GaN multi-quantum-well structures displaying intersubband absorption in the THz spectral range. First, we theoretically analyze the…”
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  16. 16

    Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering by Núñez-Cascajero, A., Valdueza-Felip, S., Blasco, R., de la Mata, M., Molina, S.I., González-Herráez, M., Monroy, E., Naranjo, F.B.

    Published in Journal of alloys and compounds (15-11-2018)
    “…The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by…”
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  17. 17

    Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements by Sobczak, K., Borysiuk, J., Strąk, P., Jakieła, R., Koroński, K., Kaminska, A., Monroy, E., Krukowski, S.

    Published in Micron (Oxford, England : 1993) (01-07-2020)
    “…[Display omitted] •The sensitivity of SSD detector allows the determination of doping in GaN (QW).•The use of the AlN as a standard in STEM/EDS allows the…”
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    All-dielectric GaN microcavity: Strong coupling and lasing at room temperature by Daskalakis, K. S., Eldridge, P. S., Christmann, G., Trichas, E., Murray, R., Iliopoulos, E., Monroy, E., Pelekanos, N. T., Baumberg, J. J., Savvidis, P. G.

    Published in Applied physics letters (11-03-2013)
    “…The strong light-matter coupling regime and lasing in a GaN microcavity fabricated by incorporating a high optical quality GaN membrane inside an…”
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