2.45 GHz GaN HEMT Class-AB RF power amplifier design for wireless communication systems

GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistor...

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Bibliographic Details
Published in:	ECTI-CON2010: The 2010 ECTI International Confernce on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology pp. 566 - 569
Main Authors:	Monprasert, G, Suebsombut, P, Pongthavornkamol, T, Chalermwisutkul, S
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2010
Subjects:	Bandwidth class-AB operation FETs Gallium nitride GaN HEMT HEMTs Mobile communication Power amplifiers Power generation Radio frequency Radiofrequency amplifiers RF power amplifier WiFi Wireless communication
Online Access:	Get full text
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Summary:	GaN based RF transistors has been drawing interest of many researchers over the recent years due to their advantages e.g. high breakdown voltage, high efficiency, high power density and large bandwidth. They are expected to replace Lateral-Diffused Metal - Oxide Semiconductor field effect transistors (LDMOS FET) that are presently popular power device for wireless and mobile communications but have a small bandwidth [1], [2], [3]. A GaN HEMT 2.45 GHz Class-AB RF power amplifier is proposed for wireless communication systems. The power device used is Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with Silicon as substrate material. The fabricated prototype of class-AB RF power amplifier fabricated can generate the maximum output power of 2.9 Watts and offer a power added efficiency (PAE) of 42.5%.
ISBN:	9781424456062 1424456061