Search Results - "Momson, Ibukunoluwa"
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1
A 10-Gb/s 180-GHz Phase-Locked-Loop Minimum Shift Keying Receiver
Published in IEEE journal of solid-state circuits (01-03-2021)“…A 180-GHz minimum shift keying (MSK) receiver (RX) using a phase-locked loop (PLL), which self-synchronizes the carrier frequency, is demonstrated. The…”
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Journal Article -
2
425-to-25-GHz CMOS-Integrated Downconverter
Published in IEEE solid-state circuits letters (2021)“…An integrated 425-GHz radio frequency (RF) to 25-GHz intermediate frequency (IF) second-order subharmonic downconverter, including an on-chip 8X local…”
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Journal Article -
3
A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K Dielectric GaN MOS-HEMTs in 300mm GaN-on-Si Technology
Published in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 (11-06-2023)“…This paper presents the design and characterization of a fully integrated 25.5-31GHz power amplifier (PA) using enhancement-mode high-k dielectric Gallium…”
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Conference Proceeding -
4
A Wideband 180-GHz Phase-Locked-Loop Based MSK Receiver
Published in 2020 IEEE Custom Integrated Circuits Conference (CICC) (01-03-2020)“…A 180 GHz mixer-first phase-locked-loop based MSK receiver is demonstrated in 65-nm CMOS. Double balanced anti-parallel-diode-pair (APDP) based sub-harmonic…”
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Conference Proceeding -
5
180-GHz Broadside Radiation Bond-Wire Antenna for Short-Range Wireless Communication
Published in IEEE transactions on components, packaging, and manufacturing technology (2011) (01-03-2021)“…A technique for realizing an efficient broadside radiation bond-wire antenna for short-range wireless communication is demonstrated. The bond wire forming the…”
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Journal Article -
6
Advancements in 300 mm GaN-on-Si Technology With Industry's First Circuit Demonstration of Monolithically Integrated GaN and Si Transistors
Published in IEEE microwave and wireless technology letters (Print) (01-06-2024)“…Advancements in 300 mm GaN-on-Si enhancement-mode (E-mode) GaN N-MOSHEMT technology featuring monolithically integrated Si pMOS by layer transfer are…”
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Journal Article -
7
5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12-06-2022)“…This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si…”
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Conference Proceeding -
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315-GHz Self-Synchronizing Minimum Shift Keying Receiver in 65-nm CMOS
Published in 2020 IEEE Symposium on VLSI Circuits (01-06-2020)“…A self-synchronizing minimum shift keying (MSK) receiver operating at 315-GHz RF is demonstrated in 65-nm CMOS. The receiver outputs digital bits and utilizes…”
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Conference Proceeding