Search Results - "Molnar, R.J."

Growth of gallium nitride by hydride vapor-phase epitaxy by Molnar, R.J., Götz, W., Romano, L.T., Johnson, N.M.

“…This paper reviews the growth of GaN thick films by hydride vapor-phase epitaxy (HVPE). Emphasis is placed on recent developments, including the growth of…”
Get full text

Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors by Yang, J.K.W., Kerman, A.J., Dauler, E.A., Cord, B., Anant, V., Molnar, R.J., Berggren, K.K.

“…In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as…”
Get full text

GaN avalanche photodiodes operating in linear-gain mode and Geiger mode by Verghese, S., McIntosh, K.A., Molnar, R.J., Mahoney, L.J., Aggarwal, R.L., Geis, M.W., Molvar, K.M., Duerr, E.K., Melngailis, I.

“…For solar-blind ultraviolet detection, AlGaN avalanche photodiodes (APDs) that operate in Geiger mode can outperform conventional AlGaN photodiodes in…”
Get full text

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN by Look, D.C., Stutz, C.E., Molnar, R.J., Saarinen, K., Liliental-Weber, Z.

“…Lattice-mismatched epitaxy produces a high concentration of dislocations ( N dis) in the interface region, and this region is often highly conductive, due to…”
Get full text

GaN hot electron transistors: From ballistic to coherent by Daulton, J.W., Molnar, R.J., Brinkerhoff, J.A., Adamson, Z.C., Hollis, M.A., Zaslavsky, A.

“…•Nitride-based hot electron transistor (HET) with current density above 1 MA/cm2.•Temperature-independent characteristics indicate the dominant role of…”
Get full text

Low-energy electron-excited nanoluminescence studies of GaN and related materials by Brillson, L.J., Bradley, S.T., Goss, S.H., Sun, X., Murphy, M.J., Schaff, W.J., Eastman, L.F., Look, D.C., Molnar, R.J., Ponce, F.A., Ikeo, N., Sakai, Y.

“…We have used low-energy electron-excited nanoluminescence (LEEN) spectroscopy combined with ultrahigh vacuum surface analysis techniques to obtain electronic…”
Get full text

Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film by Geis, M.W., Varghese, J.O., Hollis, M.A., Yichen, Y., Nemanich, R.J., Wuorio, C.H., Zhang, Xi, Turner, G.W., Warnock, S.M., Vitale, S.A., Molnar, R.J., Osadchy, T., Zhang, B.

“…Semiconducting diamond has the potential for an order-of-magnitude increase in power handling over currently used semiconductors. This is made possible by…”
Get full text

Orthodox etching of HVPE-grown GaN by Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

“…Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three…”
Get full text

Defect Donor and Acceptor in GaN by Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L., Molnar, R. J.

Get full text

Bulk GaN crystal growth by the high-pressure ammonothermal method by D’Evelyn, M.P., Hong, H.C., Park, D.-S., Lu, H., Kaminsky, E., Melkote, R.R., Perlin, P., Lesczynski, M., Porowski, S., Molnar, R.J.

“…The rapidly growing gallium nitride device industry continues to be in dire need of high quality, cost effective native substrates. Considerable progress has…”
Get full text

Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures by Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Caissie, J.

“…We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN∕Al0.06Ga0.94N∕GaN…”
Get full text

Orthodox etching of HVPE-grown GaN by Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar,R.J., Muller, S., Nowak, G., Grzegory, I.

“…Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three…”
Get full text

Electron mobility exceeding 160 000 cm{sup 2}/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy by Manfra, M.J., Baldwin, K.W., Sergent, A.M., West, K.W., Molnar, R.J., Caissie, J., Massachusetts Institute of Technology, Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02420-9108

“…We report on the transport properties of a two-dimensional electron gas (2DEG) confined in an AlGaN/GaN heterostructure grown by plasma-assisted molecular-beam…”
Get full text

Pressure Induced Deep Gap State of Oxygen in GaN by Wetzel, C., Suski, T., Ager III, J. W., Weber, E. R., Haller, E. E., Fischer, S., Meyer, B. K., Molnar, R. J., Perlin, P.

Get full text

Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy by Fang, Z.-Q., Look, D.C., Jasinski, J., Benamara, M., Liliental-Weber, Z., Molnar, R.J.

“…Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness…”
Get full text

Strongly localized excitons in gallium nitride by Wetzel, C., Fischer, S., Krüger, J., Haller, E. E., Molnar, R. J., Moustakas, T. D., Mokhov, E. N., Baranov, P. G.

“…We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in…”
Get full text

Nitride-based UV Geiger-Mode Avalanche Photodiodes by Molnar, R.J.

Get full text

Electron beam and optical depth-profiling of quasi-bulk GaN by Chernyak, L., Osinsky, A., Nootz, G., Schulte, A., Jasinski, J., Benamara, M., Liliental-Weber, Z., Look, D.C., Molnar, R.J.

“…Electron beam and optical depth-profiling of thick (5.5-64 mm) quasi-bulk n-type GaN samples, grown by hydride vapor-phase epitaxy (HVPE), were carried out…”
Get full text

Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces by Sun, X. L., Bradley, S. T., Jessen, G. H., Look, D. C., Molnar, R. J., Brillson, L. J.

“…We have used cross-sectional micro-Auger electron spectroscopy (AES), coupled with micro-cathodoluminescence (CLS) spectroscopy, in a UHV scanning electron…”
Get full text

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) by Glaser, E.R, Carlos, W.E, Braga, G.C.B, Freitas, J.A, Moore, W.J, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Bayerl, M.W, Brandt, M.S, Obloh, H, Kozodoy, P, DenBaars, S.P, Mishra, U.K, Nakamura, S, Haus, E, Speck, J.S, Van Nostrand, J.E, Sanchez, M.A, Calleja, E, Ptak, A.J, Myers, T.H, Molnar, R.J

“…We will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN…”
Get full text