Search Results - "Molnar, R."

High-speed and high-efficiency superconducting nanowire single photon detector array by Rosenberg, D, Kerman, A J, Molnar, R J, Dauler, E A

“…Superconducting nanowire single photon detectors (SNSPDs) have separately demonstrated high efficiency, low noise, and extremely high speed when detecting…”
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III-nitride vertical hot electron transistor with polarization doping and collimated injection by Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Hollis, M. A., Zaslavsky, A.

“…III-nitride-based hot electron transistors (HETs) offer a significant promise as high-speed, high-power devices, but their performance has been limited to…”
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Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors by Daulton, J. W., Molnar, R. J., Brinkerhoff, J. A., Weir, T. J., Hollis, M. A., Zaslavsky, A.

“…III-nitride-based hot electron transistors (HETs) hold significant promise as high-speed, high-power devices. In our previous work, we demonstrated high…”
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Excessive alcohol consumption induces methane production in humans and rats by Tuboly, E., Molnár, R., Tőkés, T., Turányi, R. N., Hartmann, P., Mészáros, A. T., Strifler, G., Földesi, I., Siska, A., Szabó, A., Mohácsi, Á., Szabó, G., Boros, M.

“…Various studies have established the possibility of non-bacterial methane (CH 4 ) generation in oxido-reductive stress conditions in plants and animals…”
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Towards a 1010 n/s neutron source with kHz repetition rate, few-cycle laser pulses by Osvay, K., Stuhl, L., Varmazyar, P., Gilinger, T., Elekes, Z., Fenyvesi, A., Hideghethy, K., Szabo, R. E., Füle, M., Biró, B., Halász, Z., Korkulu, Z., Kuti, I., Molnár, R., Ébert, A., Polanek, R., Buzás, E., Nagy, B., Singh, P. K., Hussain, S., Börzsönyi, A., Fülöp, Zs, Tajima, T., Mourou, G., Szabó, G.

“…A project has been launched for the development of a laser-based neutron source with the few-cycle lasers available at ELI ALPS. Here we show the first…”
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Orthodox etching of HVPE-grown GaN by Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

“…Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three…”
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Surface recombination and sulfide passivation of GaN by Martinez, G. L., Curiel, M. R., Skromme, B. J., Molnar, R. J.

“…The surface recombination velocity in n-type heteroepitaxial GaN(0001) is shown to decrease dramatically when the surface is chemically treated with aqueous…”
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Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates by Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., Speck, J. S.

“…Excess reverse-bias leakage in GaN films grown by molecular beam epitaxy on GaN templates is correlated with the presence of pure screw dislocations. A…”
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Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements by Look, D. C., Molnar, R. J.

“…Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by…”
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Bulk GaN crystal growth by the high-pressure ammonothermal method by D’Evelyn, M.P., Hong, H.C., Park, D.-S., Lu, H., Kaminsky, E., Melkote, R.R., Perlin, P., Lesczynski, M., Porowski, S., Molnar, R.J.

“…The rapidly growing gallium nitride device industry continues to be in dire need of high quality, cost effective native substrates. Considerable progress has…”
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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes by Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.

“…The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height. Using a scanning current–voltage microscope,…”
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Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy by Spradlin, J., Doǧan, S., Xie, J., Molnar, R., Baski, A. A., Morkoç, H.

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Afterpulsing and instability in superconducting nanowire avalanche photodetectors by Marsili, F., Najafi, F., Dauler, E., Molnar, R. J., Berggren, K. K.

“…We investigated the reset time of superconducting nanowire avalanche photodetectors (SNAPs) based on 30nm wide nanowires. We studied the dependence of the…”
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Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy by Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., Han, J. Y.

“…Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy…”
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Dislocation density in GaN determined by photoelectrochemical and hot-wet etching by Visconti, P., Jones, K. M., Reshchikov, M. A., Cingolani, R., Morkoç, H., Molnar, R. J.

“…Defects in GaN layers grown by hydride vapor-phase epitaxy have been investigated by photoelectrochemical (PEC) etching, and by wet etching in hot H3PO4 acid…”
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Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy by Hsu, J. W. P., Manfra, M. J., Chu, S. N. G., Chen, C. H., Pfeiffer, L. N., Molnar, R. J.

“…The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported…”
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Identification of Si and O donors in hydride-vapor-phase epitaxial GaN by Moore, W. J., Freitas, J. A., Braga, G. C. B., Molnar, R. J., Lee, S. K., Lee, K. Y., Song, I. J.

“…Donor impurity excitation spectra in the infrared from two high-quality, not-intentionally doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two…”
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Rapid evaluation of dislocation densities in n -type GaN films using photoenhanced wet etching by Youtsey, C., Romano, L. T., Molnar, R. J., Adesida, I.

“…We describe a technique based on photoelectrochemical wet etching that enables efficient and accurate evaluation of dislocation densities in n-type GaN films…”
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High-reflectivity ultraviolet AlGaN ∕ AlGaN distributed Bragg reflectors by Mitrofanov, O., Schmult, S., Manfra, M. J., Siegrist, T., Weimann, N. G., Sergent, A. M., Molnar, R. J.

“…We demonstrate high-reflectivity crack-free Al 0.18 Ga 0.82 N ∕ Al 0.8 Ga 0.2 N distributed Bragg reflectors (DBR) for the spectral region around 350 nm grown…”
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Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes by Growden, T.A., Storm, D.F., Cornuelle, E.M., Whitaker, L.M, Downey, B.P., Zhang, W-D., Daulton, J.W., Molnar, R., Brown, E.R., Berger, P.R., Meyer, D.J.

“…Recently there has been renewed interest in resonant tunnel diodes (RTD) owing to the demonstration of repeatable room temperature negative differential…”
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