Search Results - "Mollard, L"

Biaxial Piezoelectric MEMS Mirrors with Low Absorption Coating for 1550 nm Long-Range LIDAR by Mollard, L, Riu, J, Royo, S, Dieppedale, C, Hamelin, A, Koumela, A, Verdot, T, Frey, L, Le Rhun, G, Castellan, G, Licitra, C

“…This paper presents the fabrication and characterization of a biaxial MEMS (MicroElectroMechanical System) scanner based on PZT (Lead Zirconate Titanate) which…”
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Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication by Gravrand, O., Destefanis, G., Bisotto, S., Baier, N., Rothman, J., Mollard, L., Brellier, D., Rubaldo, L., Kerlain, A., Destefanis, V., Vuillermet, M.

“…The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and…”
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Antipsychotic drugs and the risk of recurrent venous thromboembolism: A prospective cohort study by Mollard, L.M., Le Mao, R., Tromeur, C., Le Moigne, E., Gouillou, M., Pan-Petesch, B., Delluc, A., Couturaud, F., Lacut, K.

“…Numerous studies have suggested that antipsychotic drugs are associated with an increased risk for a first episode of venous thromboembolism (VTE). However,…”
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Characterization of the Microstructure of HgCdTe with p-Type Doping by Lobre, C., Jouneau, P.-H., Mollard, L., Ballet, P.

“…Nitrogen, phosphorus, arsenic, and antimony ions were implanted in Hg 0.3 Cd 0.7 Te (MCT) layers under the same implantation conditions. An identical annealing…”
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Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on-n HgCdTe by Baier, N., Cervera, C., Gravrand, O., Mollard, L., Lobre, C., Destefanis, G., Bourgeois, G., Zanatta, J.P., Boulade, O., Moreau, V.

“…We report recent developments at Commissariat à l’Energie Atomique-Laboratoire d’Electronique des Technologies de l’Information Infrared Laboratory on the…”
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p-on-n HgCdTe Infrared Focal-Plane Arrays: From Short-Wave to Very-Long-Wave Infrared by Mollard, L., Bourgeois, G., Lobre, C., Gout, S., Viollet-Bosson, S., Baier, N., Destefanis, G., Gravrand, O., Barnes, J. P., Milesi, F., Kerlain, A., Rubaldo, L., Manissadjian, A.

“…This paper reports on recent developments made at the DEFIR joint laboratory on fabrication of planar p -on- n arsenic (As)-ion-implanted HgCdTe photodiodes…”
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Ultralow-Dark-Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir by Gravrand, O., Mollard, L., Boulade, O., Moreau, V., Sanson, E., Destefanis, G.

“…We report the first results of work carried out at CEA and Sofradir to build ultralow-dark-current focal-plane arrays (FPAs) in the short-wave infrared range…”
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Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes by Kerlain, A., Bonnouvrier, G., Rubaldo, L., Decaens, G., Reibel, Y., Abraham, P., Rothman, J., Mollard, L., De Borniol, E.

“…HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in avalanche photodiodes (APDs) up to multiplication factors…”
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Study of LWIR and VLWIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe by Gravrand, O., Mollard, L., Largeron, C., Baier, N., Deborniol, E., Chorier, Ph

“…The very long infrared wavelength (>14  μ m) is a very challenging range for the design of mercury cadmium telluride (HgCdTe) large focal plane arrays (FPAs)…”
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Status of p-on-n Arsenic-Implanted HgCdTe Technologies by Mollard, L., Destefanis, G., Bourgeois, G., Ferron, A., Baier, N., Gravrand, O., Barnes, J. P., Papon, A. M., Milesi, F., Kerlain, A., Rubaldo, L.

“…In this paper recent developments made by the French Atomic Energies and Alternative Energies Commission (CEA) at the Electronics and Information Technology…”
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Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation by Mollard, L., Destefanis, G., Baier, N., Rothman, J., Ballet, P., Zanatta, J. P., Tchagaspanian, M., Papon, A. M., Bourgeois, G., Barnes, J. P., Pautet, C., Fougères, P.

“…This paper reviews recent developments in the characterization of planar p -on- n photodiodes fabricated from long- and mid-wavelength Hg 1− x Cd x Te at␣the…”
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Efficacy of rituximab in acquired factor XIII inhibitor after arterial rFVIIa-induced thrombosis by Ngo Sack, F., Galinat, H., Egreteau, P.-Y., Mollard, L. M., Fortin, H., Berthou, C., Abgrall, J. F., Pan-Petesch, B.

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Development of a Method for Chemical–Mechanical Preparation of the Surface of CdZnTe Substrates for HgCdTe-Based Infrared Focal-Plane Arrays by Pelenc, D., Merlin, J., Etcheberry, A., Ballet, P., Baudry, X., Brellier, D., Destefanis, V., Ferron, A., Fougères, P., Giotta, D., Grangier, C., Mollard, L., Perez, A., Rochette, F., Rubaldo, L., Vaux, C., Vigneron, J., Zanatta, J.-P.

“…This paper reports the first implementation in our laboratory of a chemical–mechanical polishing (CMP) process for CdZnTe (CZT) substrates prepared for growth…”
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Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach by Causier, A., Gerard, I., Bouttemy, M., Etcheberry, A., Pautet, C., Baylet, J., Mollard, L.

“…The ability to pattern HgCdTe surfaces using a wet etching solution is an important challenge for processing of third-generation infrared detectors. The…”
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Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec by Rothman, Johan, Perrais, Gwladys, Ballet, Philippe, Mollard, L., Gout, S., Chamonal, J.-P.

“…In this communication, we report on the electro-optical characterization of planar back-side-illuminated HgCdTe electron initiated avalanche photodiode (e-APD)…”
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From long infrared to very long infrared wavelength focal plane arrays made with HgCdTe n+n- /p ion implantation technology by GRAVRAND, O, DE BORNIOL, E, BISOTTO, S, MOLLARD, L, DESTEFANIS, G

“…This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12-18 mum) focal plane arrays using n-on-p planar ion-implanted…”
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Shockley–Haynes Characterization of Minority-Carrier Drift Velocity, Diffusion Coefficient, and Lifetime in HgCdTe Avalanche Photodiodes by Rothman, Johan, Vojetta, G., Moselle, B., Mollard, L., Gout, S., Chamonal, J.-P.

“…A combined study of the avalanche gain characteristics of HgCdTe electron-avalanche photodiodes (e-APDs) and of the minority electron properties in the p -type…”
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High-Operating-Temperature HgCdTe Avalanche Photodiodes by Rothman, J., Baier, N., Ballet, P., Mollard, L., Fournier, M., Gout, J. S., Chamonal, J.-P.

“…In this communication we report the first results of electro-optical characterization of planar heterostructure HgCdTe avalanche photodiodes (APDs), which…”
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Preferential nucleation of silicon nano-crystals on electron beam exposed SiO2 surfaces by MAZEN, F, MOLLARD, L, BARON, T, DECOSSAS, S, HARTMANN, J. M

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HSQ hybrid lithography for 20 nm CMOS devices development by Mollard, L., Cunge, G., Tedesco, S., Dal’zotto, B., Foucher, J.

“…This paper reports the lithographic development on 8 in. silicon wafers for 20 nm CMOS devices using a hydrogen silsesquioxane (HSQ) hybrid lithography…”
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