Search Results - "Molinos, F."

Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al:HfO2/TiN RRAMs by Pérez, E., Maldonado, D., Acal, C., Ruiz-Castro, J.E., Alonso, F.J., Aguilera, A.M., Jiménez-Molinos, F., Wenger, Ch, Roldán, J.B.

“…In order to study the device-to-device and cycle-to-cycle variability of switching voltages in 4-kbit RRAM arrays, an alternative statistical approach has been…”
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Current transient response and role of the internal resistance in HfOx-based memristors by Gonzalez, M. B., Maestro-Izquierdo, M., Jiménez-Molinos, F., Roldán, J. B., Campabadal, F.

“…Filamentary-type valence change memristors based on HfO2 are currently being explored as potential candidates to emulate the synaptic functionality of…”
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Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective by Maldonado, D., Aldana, S., González, M.B., Jiménez-Molinos, F., Ibáñez, M.J., Barrera, D., Campabadal, F., Roldán, J.B.

“…We have analyzed variability in resistive memories (Resistive Random Access Memories, RRAMs) making use of advanced numerical techniques to process…”
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Parameter extraction techniques for the analysis and modeling of resistive memories by Maldonado, D., Aldana, S., González, M.B., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

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Influence of variability on the performance of HfO2 memristor-based convolutional neural networks by Romero-Zaliz, R., Pérez, E., Jiménez-Molinos, F., Wenger, C., Roldán, J.B.

“…•Quantization and variability in neural network synaptic weights was studied.•Different convolutional neural network architectures were considered.•A…”
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A physically based model for resistive memories including a detailed temperature and variability description by González-Cordero, G., González, M.B., García, H., Campabadal, F., Dueñas, S., Castán, H., Jiménez-Molinos, F., Roldán, J.B.

“…A new model to account for variability in resistive memories is presented. It is included in a previous general current model that considers the main physical…”
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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices by Maldonado, D., Aguilera-Pedregosa, C., Vinuesa, G., García, H., Dueñas, S., Castán, H., Aldana, S., González, M.B., Moreno, E., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

“…An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC)…”
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Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories by Maldonado, D., Roldán, A.M., González, M.B., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

“…A characterization process for resistive RAM (RRAMs) based on TiN/Ti/HfO2/W stacks has been performed. In addition to conventional electrical measurements, the…”
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states by Jiménez-Molinos, F., Vinuesa, G., García, H., Dueñas, S., Castán, H., González, M.B., Campabadal, F., Roldán, J.B.

“…The dependence of the current in TiN/Ti/HfO2/W devices on the temperature is investigated in the range from 78 K to 340 K. Resistive switching cycles at 78 K…”
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Study of RTN signals in resistive switching devices based on neural networks by González-Cordero, G., González, M.B., Zabala, M., Kalam, K., Tamm, A., Jiménez-Molinos, F., Campabadal, F., Roldán, J.B.

“…•Devices with TiN/Ti-HfO2-Pt are fabricated and measured.•A new numerical technique for the analysis of RTN signals is presented.•Self-organizing maps are…”
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Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits by González-Cordero, G., Pedro, M., Martin-Martinez, J., González, M.B., Jiménez-Molinos, F., Campabadal, F., Nafría, N., Roldán, J.B.

“…•Devices with TiN/Ti-HfO2-W stacks are used to mimic synapses.•A physically-based compact model is employed for the device analysis.•A series of experimental…”
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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge by García, H., Jiménez-Molinos, F., Vinuesa, G., González, M.B., Roldán, J.B., Miranda, E., Campabadal, F., Castán, H., Dueñas, S.

“…[Display omitted] In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach…”
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A new technique to analyze RTN signals in resistive memories by González-Cordero, G., González, M.B., Campabadal, F., Jiménez-Molinos, F., Roldán, J.B.

“…A new technique to study random telegraph noise is proposed. It is based on an analysis of the variations of the sampled current instead of the current itself…”
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Variability and power enhancement of current controlled resistive switching devices by Vinuesa, G., García, H., Lendínez, J.M., García-Ochoa, E., González, M.B., Maldonado, D., Aguilera-Pedregosa, C., Moreno, E., Jiménez-Molinos, F., Roldán, J.B., Campabadal, F., Castán, H., Dueñas, S.

“…In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage…”
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Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach by Rodriguez, N, Maldonado, D, Romero, F J, Alonso, F J, Aguilera, A M, Godoy, A, Jimenez-Molinos, F, Ruiz, F G, Roldan, J B

“…This work investigates the sources of resistive switching (RS) in recently reported laser-fabricated graphene oxide memristors by means of two numerical…”
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories by Maldonado, D., Vinuesa, G., Aldana, S., Aguirre, F.L., Cantudo, A., García, H., González, M.B., Jiménez-Molinos, F., Campabadal, F., Miranda, E., Dueñas, S., Castán, H., Roldán, J.B.

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An Analytical I- V Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects by Roldán, J B, Gamiz, F, Jiménez-Molinos, F, Sampedro, C, Godoy, A, García-Ruiz, Francisco J, Rodriguez, N

“…A new analytical model is presented for the inversion charge of surrounding-gate transistors (SGTs). Quantum effects are taken into account by means of a…”
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Estimation of the reset voltage in resistive RAMs using the charge–flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials by Ibáñez, M.J., Jiménez-Molinos, F., Roldán, J.B., Yáñez, R.

“…Resistive RAMs (RRAMs) are the most promising devices for the near future in terms of non-volatile memory applications. This new technology requires advances…”
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A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs by Villena, M.A., Roldán, J.B., González, M.B., González-Rodelas, P., Jiménez-Molinos, F., Campabadal, F., Barrera, D.

“…•A new parameter to characterize electron transport in RRAMs has been introduced.•The reset voltage can be estimated by using the threshold voltage for…”
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An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs by Villena, M.A., González, M.B., Roldán, J.B., Campabadal, F., Jiménez-Molinos, F., Gómez-Campos, F.M., Suñé, J.

“…•Reset processes in RRAMs have been studied for different external temperatures.•RRAMs I–V curves have been simulated and measured to study their temperature…”
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