Search Results - "Molina, Si"

Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission by Alonso-González, P, González, L, Martín-Sánchez, J, González, Y, Fuster, D, Sales, D. L, Hernández-Maldonado, D, Herrera, M, Molina, S. I

“…In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate…”
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Investigation of AlInAsSb/GaSb tandem cells – A first step towards GaSb-based multi-junction solar cells by Kret, J., Tournet, J., Parola, S., Martinez, F., Chemisana, D., Morin, R., Mata, M. de la, Fernández-Delgado, N., Khan, A.A., Molina, S.I., Rouillard, Y., Tournié, E., Cuminal, Y.

“…III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb…”
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering by Núñez-Cascajero, A., Valdueza-Felip, S., Blasco, R., de la Mata, M., Molina, S.I., González-Herráez, M., Monroy, E., Naranjo, F.B.

“…The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by…”
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Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells by Hernández-Saz, J., Herrera, M., Pizarro, J., Gonzalez, M., Abell, J., Walters, R., Galindo, P.L., Duguay, S., Molina, S.I.

“…In this work, the effect of thermal annealing under As overpressure in the composition distribution of In8Al42As34.5Sb15.5 layers, lattice matched to InP for…”
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Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells by Hernández-Saz, J., Herrera, M., Pizarro, J., Galindo, P.L., Gonzalez, M., Abell, J., Walters, R.J., Molina, S.I., Duguay, S.

“…The composition distribution of In0.16Al0.34As0.41Sb0.09 layers grown at different temperatures with applications in solar cells have been analysed by atom…”
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Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials by BALADÉS, N., HERRERA, M., SALES, D.L., GUERRERO, M.P., GUERRERO, E., GALINDO, P.L., MOLINA, S.I.

“…Summary The influence of the neighbouring atomic‐columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using…”
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3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs by Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R., Duguay, S.

“…[Display omitted] The 3D compositional distribution at the atomic-scale of InAs/GaAs quantum dots (QDs) with an InAlGaAs capping layer has been obtained by…”
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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness by Hernández-Saz, J., Herrera, M., Molina, S.I., Stanley, C.R., Duguay, S.

“…In this work, we analyse by Atom Probe Tomography (APT) the composition distribution of InAs/GaAs stacked quantum dots (QDs) with InAlGaAs capping layers. Two…”
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Room temperature emission at 1.6 μ m from InGaAs quantum dots capped with GaAsSb by Ripalda, J. M., Granados, D., González, Y., Sánchez, A. M., Molina, S. I., García, J. M.

“…Room temperature photoluminescence at 1.6 μ m is demonstrated from InGaAs quantum dots capped with an 8 nm GaAsSb quantum well. Results obtained from various…”
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Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots by Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., Molina, S. I.

“…The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning…”
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Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001) by Granados, D., García, J. M., Ben, T., Molina, S. I.

“…Stacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy…”
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Extreme voltage recovery in GaAs:Ti intermediate band solar cells by Linares, P.G., Martí, A., Antolín, E., Ramiro, I., López, E., Hernández, E., Fuertes Marrón, D., Artacho, I., Tobías, I., Gérard, P., Chaix, C., Campion, R.P., Foxon, C.T., Stanley, C.R., Molina, S.I., Luque, A.

“…Intermediate band materials incorporate a collection of energy levels with special optoelectronic properties within the semiconductor bandgap. This feature…”
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Quantification of corrugation in simulated graphene by electron tomography techniques by Scavello, G., Pizarro, J., Maestre, J. F., Molina, S. I., Galindo, P. L.

“…Electron tomography (ET) can be used to determine the shape, and therefore the properties, of an object. It deals with retrieving tridimensional (3D)…”
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Three dimensional atom probe imaging of GaAsSb quantum rings by Beltrán, A.M., Marquis, E.A., Taboada, A.G., Ripalda, J.M., García, J.M., Molina, S.I.

“…Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography…”
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Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers by Rodrigo, J.F., Sales, D.L., Shafi, M., Henini, M., Turyanska, L., Novikov, S., Molina, S.I.

“…The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional…”
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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN by Morales, F.M., Carvalho, D., Ben, T., García, R., Molina, S.I., Martí, A., Luque, A., Staddon, C.R., Campion, R.P., Foxon, C.T.

“…Arsenic alloying is observed for epitaxial layers nominally intended to be In 0.75Ga 0.25N. Voids form beneath their interfaces with GaAs substrates, acting as…”
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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy Doping, optical, and electrical properties by Calleja, E, Sánchez-Garcı́a, M.A, Sánchez, F.J, Calle, F, Naranjo, F.B, Muñoz, E, Molina, S.I, Sánchez, A.M, Pacheco, F.J, Garcı́a, R

“…The growth of high-quality III-nitrides by plasma-assisted molecular beam epitaxy on Si(1 1 1) substrates is addressed. A combination of optimized AlN buffer…”
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Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer by Beltran, A.M., Ben, T., Sanchez, A.M., Ripalda, J.M., Taboada, A.G., Molina, S.I.

“…GaSb incorporation to InAs/GaAs quantum dots is considered for improving the opto-electronic properties of the systems. In order to optimize these properties,…”
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Diversity and guild structure of insect assemblages under grazing and exclusion regimes in a montane grassland from Central Argentina by Cagnolo, L, Molina, Si, Valladares, Gr

“…The effects of grazing disturbance on insect communities were examined at a montane grassland in Central Argentina, by comparing two grazed sites differing in…”
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Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange by Fuster, David, González, María Ujué, González, Luisa, González, Yolanda, Ben, Teresa, Ponce, Arturo, Molina, Sergio I., Martínez-Pastor, Juan

“…The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by…”
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