Search Results - "Mokhlesi, N."

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS by Trinh, C., Shibata, N., Nakano, T., Ogawa, M., Sato, J., Takeyama, Y., Isobe, K., Le, B., Moogat, F., Mokhlesi, N., Kozakai, K., Hong, P., Kamei, T., Iwasa, K., Nakai, J., Shimizu, T., Honma, M., Sakai, S., Kawaai, T., Hoshi, S., Yuh, J., Hsu, C., Tseng, T., Li, J., Hu, J., Liu, M., Khalid, S., Chen, J., Watanabe, M., Lin, H., Yang, J., McKay, K., Nguyen, K., Pham, T., Matsuda, Y., Nakamura, K., Kanebako, K., Yoshikawa, S., Igarashi, W., Inoue, A., Takahashi, T., Komatsu, Y., Suzuki, C., Kanazawa, K., Higashitani, M., Lee, S., Murai, T., Lan, J., Huynh, S., Murin, M., Shlick, M., Lasser, M., Cernea, R., Mofidi, M., Schuegraf, K., Quader, K.

“…Today NAND flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. To satisfy the…”
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128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode by Yan Li, Seungpil Lee, Oowada, K., Hao Nguyen, Qui Nguyen, Mokhlesi, N., Hsu, C., Li, J., Ramachandra, V., Kamei, T., Higashitani, M., Pham, T., Honma, M., Watanabe, Y., Ino, K., Binh Le, Byungki Woo, Khin Htoo, Tai-Yuan Tseng, Pham, L., Tsai, F., Kwang-ho Kim, Yi-Chieh Chen, Min She, Jong Yuh, Chu, A., Chen Chen, Puri, R., Hung-Szu Lin, Yi-Fang Chen, Mak, W., Huynh, J., Jim Chan, Watanabe, M., Yang, D., Shah, G., Souriraj, P., Tadepalli, D., Tenugu, S., Gao, R., Popuri, V., Azarbayjani, B., Madpur, R., Lan, J., Yero, E., Feng Pan, Hong, P., Jang Yong Kang, Moogat, F., Yupin Fong, Cernea, R., Huynh, S., Trinh, C., Mofidi, M., Shrivastava, R., Quader, K.

“…This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC)…”
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A solution for current–voltage characteristics of multiple coupled mesoscopic tunnel junctions by Mokhlesi, Nima, Jazayeri, Reza, Janes, David B.

“…A theoretical conduction model for structures composed of a number of conducting islands that are coupled to each other, and to external leads/gates via tunnel…”
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