Search Results - "Mojzes, I."

Structural entropy in detecting background patterns of AFM images by Molnár, L.M., Nagy, Sz, Mojzes, I.

“…Structural entropy was developed for detecting the type of localization in charge distributions on a finite grid, especially in mesoscopic electronic systems…”
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Investigation of the surface morphology on epitaxially grown fullerene structures by Nemcsics, Á., Nagy, Sz, Mojzes, I., Schwedhelm, R., Woedtke, S., Adelung, R., Kipp, L.

“…Fullerene layers molecular beam epitaxially grown on, a vanadium–selenide substrate are investigated and the morphology of the layered structures is studied…”
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Stimulated changes in Bi(Sb)/AS2S3 nanolayered structures by TAKATS, V, VOJNAROVICH, I, PINZENIK, V, MOJZES, I, KOKENYESI, S, SANGUNNI, K. S

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Fractal character of in situ heat treated metal-compound semiconductor contacts by David, L, Dobos, L, Kovacs, B, Mojzes, I, Pecz, B

“…Issue Title: Special Issue: Optoelectronic and Electronic Materials and Devices The heat treatment of metallized (Au) compound semiconductors (InP) was studied…”
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Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline by Schuszter, M, Dobos, L, Demcu, K A, Nagy, Sz, Mojzes, I

“…Heat treatment of metallized compound semiconductors results in generation of Ohmic contacts. The morphology changes of the surface during the thermal…”
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Conductivity modification of silver salt-filled polyimide film by pulsed KrF laser by KOCSIS, Z, HOPP, B, MUDRA, I, RIPKA, G, KOVACS, B, MOJZES, I

“…The ultraviolet (UV) laser treatment of polyimide films can lead to the formation of a conductive area. The formation of a conductive layer starts at a…”
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Fractal behaviour of the surface of in situ heat treated metal–InP contacts by Mojzes, I, Kovács, B, Schuszter, M, Kun, I, Máté, L, Dobos, L, Dávid, L

“…The heat treatment of metallised compound semiconductors results material diffusion and evaporation, called volatile component loss. In situ SEM and mass…”
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Electrical and microstructure analysis of Ni/Ge/n-GaAs interface by Dávid, L, Kovács, B, Mojzes, I, Pécz, B, Lábár, J

“…Ni(27 nm)/Ge(23 nm) and Ni(10 nm)/Ge(40 nm) layers deposited onto n-type GaAs by electron beam evaporation were studied structurally and electrically. The…”
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The electrical properties of Al/Ni/Ge/n-GaAs interfaces by Dávid, L., Kovács, B., Mojzes, I., Kincses, Zs, Dobos, L.

“…An Al(130 nm)/Ni(30 nm)/Ge(40 nm) layer deposited onto n-type GaAs by thermal evaporation was electrically studied. The electrical properties of these contacts…”
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Electrical and structural characterisation of Ni\Ge\ n-GaAs interface by David, L, Kovács, B, Mojzes, I, Pécz, B, Lábár, J, Dobos, L

“…The structural and electrical behaviour of Ni\Ge layers deposited onto n-type GaAs by electron beam evaporation were studied. The samples have been annealed…”
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Noise investigation of ultraviolet laser induced grain structure in polyimide films by KOCSIS, Z, KINCSES, Z, HOPP, B, RIPKA, G, MOJZES, I

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Influence of finite metal overlayer resistance on the evaluation of contact resistivity by Kovacs, B., Mojzes, I.

“…To determine contact parameters, TLM methods are widely used. Their general usage assumes the sheet resistance of metal overlayer to be zero. This work shows…”
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A novel evaluating method to determine fractal dimension of SEM images: a study of heat treated Au/Pd/GaAs contact by Schuszter, M, Dobos, L, Mojzes, I

“…The heat treatment is an essential step of making Ohmic contacts to compound semiconductors. During the heat treatment a remarkable volatile component…”
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Stimulated changes in Bi(Sb)/As 2S 3 nanolayered structures by Takats, V., Vojnarovich, I., Pinzenik, V., Mojzes, I., Kokenyesi, S., Sangunni, K.S.

“…Investigations of a-Se/As 2S 3-type chalcogenide nanomultilayers (NML) were extended towards the metal-containing Bi(Sb)/As 2S 3 structures. It was shown that…”
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Fractal character of in situ heat treated metal-compound semiconductor contacts: Optoelectronic and Electronic Materials and Devices by DAVID, L, DOBOS, L, KOVACS, B, MOJZES, I, PECZ, B

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Theoretical explanation of the Schottky barrier height using an ultrathin interface metal layer by TUY, T. Q, MOJZES, I

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Application of compound semiconductors in telecommunication by Mojzes, I.

“…Silicon is the only one material for the classical microelectronics applications such as analogue and digital integrated circuits including many applications…”
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Theoretical explanation of the control of the Schottky barrier height using an ultrathin interface metal layer by Tuy, T. Q., Mojzes, I.

“…Recently experimental results for a thin interface metal layer to control the Schottky barrier height of Ti/Pt/n-GaAs and Pt/Ti/n-GaAs contacts were presented…”
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Novel method to determine contact resistivity and sheet resistance under the contact by THOANG, DO DAC, KOVACS, BALAZS, MOJZES, IMRE

“…A method to determine specific contact resistance and sheet resistivity under the contact using two L-type cross Kelvin resistors is presented. In the model…”
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Some remarks to the nanowires grown on Ill-V substrate by Nemcsics, A., Horvath, E., Nagy, S., Molnar, L.M., Mojzes, I., Horvath, Z.J.

“…In the present work nanowires are investigated, which were prepared with the help of encapsulated metal induced growth method on GaAs and InP substrate. As our…”
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