Search Results - "Mohta, Neha"

An artificial synaptic transistor using an α-In 2 Se 3 van der Waals ferroelectric channel for pattern recognition by Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N

“…Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET)…”
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In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response by Mech, Roop K., Solanke, Swanand V., Mohta, Neha, Rangarajan, Muralidharan, Nath, Digbijoy N.

“…We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated β-Indium selenide (In 2 Se 3 ) on sapphire with a clear…”
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An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition by Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N

“…Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET)…”
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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3 by Mech, Roop K., Mohta, Neha, Chatterjee, Avijit, Selvaraja, Shankar Kumar, Muralidharan, Rangarajan, Nath, Digbijoy N.

“…Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide…”
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Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics by Mohta, Neha, Mech, Roop K., Sanjay, Sooraj, Muralidharan, R., Nath, Digbijoy N.

“…Artificial Synapse In article number 2000254, Neha Mohta and co‐workers report a synaptic transistor based on a 2D‐MoS2 semiconducting channel and high‐k Ta2O5…”
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Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics by Mohta, Neha, Mech, Roop K., Sanjay, Sooraj, Muralidharan, R., Nath, Digbijoy N.

“…Herein, a multilayer MoS 2 ‐based low‐power synaptic transistor using Ta 2 O 5 as a back‐gate dielectric for mimicking the biological neuronal synapse is…”
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Artificial Synapse Based on Back‐Gated MoS 2 Field‐Effect Transistor with High‐ k Ta 2 O 5 Dielectrics by Mohta, Neha, Mech, Roop K., Sanjay, Sooraj, Muralidharan, R., Nath, Digbijoy N.

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In 2 Se 3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response by Mech, Roop K., Solanke, Swanand V., Mohta, Neha, Rangarajan, Muralidharan, Nath, Digbijoy N.

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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In 2 Se 3 by Mech, Roop K., Mohta, Neha, Chatterjee, Avijit, Selvaraja, Shankar Kumar, Muralidharan, Rangarajan, Nath, Digbijoy N.

“…Herein, device demonstration based on vertical transport in multilayer α‐In 2 Se 3 is reported. Photodetectors realized using a metal/α‐In 2 Se 3 /indium tin…”
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Artificial Synapse Based on Back‐Gated MoS2 Field‐Effect Transistor with High‐k Ta2O5 Dielectrics by Mohta, Neha, Mech, Roop K., Sanjay, Sooraj, Muralidharan, R., Nath, Digbijoy N.

“…Herein, a multilayer MoS2‐based low‐power synaptic transistor using Ta2O5 as a back‐gate dielectric for mimicking the biological neuronal synapse is reported…”
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An artificial synaptic transistor using an α-InSe van der Waals ferroelectric channel for pattern recognition by Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R, Nath, Digbijoy N

“…Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET)…”
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Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer \alpha -In2Se3 by Mech, Roop K., Mohta, Neha, Muralidharan, Rangarajan, Nath, Digbijov N.

“…We report on the first demonstration of photodetector as well as the observation of photovoltaic effect based on vertical transport in multilayer \alpha -In 2…”
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Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs by Shankar, Bhawani, Soni, Ankit, Singh, Manikant, Soman, Rohith, Chandrasekar, Hareesh, Mohan, Nagaboopathy, Mohta, Neha, Ramesh, Nayana, Prabhu, Shreesha, Kulkarni, Abhay, Nath, Digbijoy, Muralidharan, R., Bhat, K. N., Raghavan, Srinivasan, Bhat, Navakant, Shrivastava, Mayank

“…This work reports the very first systematic study on the physics of avalanche instability and SOA concerns in AlGaN/GaN HEMT using sub-μs pulse…”
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