Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

The growth of III–V bismuthides is complicated by the low incorporation efficiency of Bi in GaAs, leading either to the formation of metallic Bi droplets or low layer composition fractions. Typically growth is performed between 280 and 350 °C and at near stoichiometric Ga:As fluxes in order to encou...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 338; no. 1; pp. 57 - 61
Main Authors:	Bastiman, F., Mohmad, A.R.B., Ng, J.S., David, J.P.R, Sweeney, S.J.
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 2012 Elsevier
Subjects:	A1. Scanning tunnelling microscopy A3. Molecular beam epitaxy B1. Bismuth B2. Semiconductor III–V materials Cross-disciplinary physics: materials science; rheology Crystal growth Droplets Equivalence Exact sciences and technology Gallium arsenide Gallium arsenides Materials science Methods of crystal growth; physics of crystal growth Methods of deposition of films and coatings; film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Overpressure Physics Pressure ratio Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation B1. Bismuth A1. Scanning tunnelling microscopy A3. Molecular beam epitaxy B2. Semiconductor III–V materials Buffer layer A3 Molecular beam epitaxy Gallium arsenides Gallium Phase composition Tunnel effect B1 Bismuth A1 Scanning tunnelling microscopy III-V compound Growth mechanism Bismuth Bismuthides Molecular beam epitaxy Droplets B2 Semiconductor III―V materials III-V semiconductors
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Summary:	The growth of III–V bismuthides is complicated by the low incorporation efficiency of Bi in GaAs, leading either to the formation of metallic Bi droplets or low layer composition fractions. Typically growth is performed between 280 and 350 °C and at near stoichiometric Ga:As fluxes in order to encourage Bi incorporation. However most work reported to date also utilises As 2 as the As overpressure constituent. It is found in this work that growth with As 4 allows high Bi composition films with the standard 1:20 Ga:As 4 beam equivalent pressure ratio (BEPR) utilised for higher temperature buffer layer growth. The Bi fraction versus Bi:As 4 BEPR is found to be initially linear, until a maximum value is obtained for a given temperature after which the continued oversupply of Bi results in the formation of droplets. ► Droplet free growth of GaAsBi. ► High temperature growth of GaAsBi. ► Growth with As 4 overpressure, not As 2. ► Optimisation of growth recipe for (a) strong photoluminescence intensity, (b) narrow FWHM and (c) crystal quality (XRD data).
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2011.07.036