Germanium Multiple-Gate Field-Effect Transistors Formed on Germanium-on-Insulator Substrate

We demonstrate the integration of high performance p-channel Germanium Multiple-Gate Field-Effect Transistors (MuGFETs) on a Germanium-on-Insulator substrate. Detailed process conditions are documented in this paper. The effects of Ge fin doping concentration on the electrical performance of Ge MuGF...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 60; no. 6; pp. 1852 - 1860
Main Authors:	Bin Liu, Xiao Gong, Chunlei Zhan, Genquan Han, Hock-Chun Chin, Moh-Lung Ling, Jie Li, Yongdong Liu, Jiangtao Hu, Daval, N., Veytizou, C., Delprat, D., Bich-Yen Nguyen, Yee-Chia Yeo
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-06-2013 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Doping Electronics Exact sciences and technology Fin doping FinFETs GeOI Germanium Hafnium compounds Leakage currents Logic gates metal S/D MuGFETs oCD Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Substrates Transistors High strength current High performance MOSFET Multiple gate transistor Doping Short channel Dual gate transistor Germanium on insulator technology MuGFETs Optimization Self aligned technology Process conditions Field effect transistor OCD p channel Fin doping Concentration effect Germanium FinFETs GeOI metal S/D Transconductance Electrical characteristic
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We demonstrate the integration of high performance p-channel Germanium Multiple-Gate Field-Effect Transistors (MuGFETs) on a Germanium-on-Insulator substrate. Detailed process conditions are documented in this paper. The effects of Ge fin doping concentration on the electrical performance of Ge MuGFETs are discussed, and this could be useful for further device optimization. It is found that a higher fin doping leads to better control of short-channel efforts of Ge MuGFETs but degrades the on-state current and transconductance. High on-state current for Ge MuGFETs is reported in this paper.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2013.2258924