Search Results - "Moen, K A"

Optimization of SiGe bandgap-based circuits for up to 300°C operation by Thomas, D.B., Najafizadeh, L., Cressler, J.D., Moen, K.A., Lourenco, N.

“…► Devices in commercial bulk SiGe BiCMOS platform characterized to demonstrate acceptable performance up to 300°C. ► Proven SiGe BGR circuit designed for wide…”
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Sub-1-K Operation of SiGe Transistors and Circuits by Najafizadeh, L., Adams, J.S., Phillips, S.D., Moen, K.A., Cressler, J.D., Aslam, S., Stevenson, T.R., Meloy, R.M.

“…We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the…”
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Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits by Najafizadeh, L., Phillips, S.D., Moen, K.A., Diestelhorst, R.M., Bellini, M., Saha, P.K., Cressler, J.D., Vizkelethy, G., Turowski, M., Raman, A., Marshall, P.W.

“…We investigate the single-event transient (SET) response of bandgap voltage references (BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam…”
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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs by Pellish, J.A., Reed, R.A., McMorrow, D., Vizkelethy, G., Cavrois, V.F., Baggio, J., Paillet, P., Duhamel, O., Moen, K.A., Phillips, S.D., Diestelhorst, R.M., Cressler, J.D., Sutton, A.K., Raman, A., Turowski, M., Dodd, P.E., Alles, M.L., Schrimpf, R.D., Marshall, P.W., LaBel, K.A.

“…Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam…”
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Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K by Lan Luo, Guofu Niu, Moen, K.A., Cressler, J.D.

“…In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors…”
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Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs by Moen, K. A., Chakraborty, P. S., Raghunathan, U. S., Cressler, J. D., Yasuda, H.

“…We study mixed-mode stress degradation in SiGe HBTs using a novel physical TCAD model in which the processes of hot carrier generation within the…”
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Single-Event Response of the SiGe HBT Operating in Inverse-Mode by Phillips, S. D., Moen, K. A., Lourenco, N. E., Cressler, J. D.

“…The single-event effect sensitivity of inverse-mode biased SiGe HBTs in both bulk and SOI technology platforms are investigated, for the first time, using…”
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An Investigation on the Optimization and Scaling of Complementary SiGe HBTs by Chakraborty, P. S., Moen, K. A., Cressler, J. D.

“…We use predictive technology computer-aided design to investigate the device design challenges and optimization issues that will be necessarily encountered in…”
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Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit by Moen, K A, Najafizadeh, L, Jung Seungwoo, Raman, A, Turowski, M, Cressler, J D

“…Single-event transients (SETs) are modeled in a SiGe voltage reference using compact model and full 3-D mixed-mode TCAD simulations. The effect of bias…”
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Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs by Turowski, W, Pellish, J A, Moen, K A, Raman, A, Cressler, J D, Reed, R A, Guofu Niu

“…Comprehensive 3-D mixed-mode simulations, including accurate modeling of parasitic elements present in the experimental setup, resulted in close agreement…”
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Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS by Moen, K A, Phillips, S D, Wilcox, E P, Cressler, J D, Nayfeh, H, Sutton, A K, Warner, J H, Buchner, S P, McMorrow, D, Vizkelethy, G, Dodd, P

“…We investigate the single-event transient (SET) response of T-body and notched-body contacted MOSFETs from a commercial 45 nm SOI RF-CMOS technology. Although…”
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A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs by Phillips, S D, Moen, K A, Najafizadeh, L, Diestelhorst, R M, Sutton, A K, Cressler, J D, Vizkelethy, G, Dodd, P E, Marshall, P W

“…We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors…”
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Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology by Lourenco, N. E., Schmid, R. L., Moen, K. A., Phillips, S. D., England, T. D., Cressler, J. D., Pekarik, J., Adkisson, J., Camillo-Castillo, R., Cheng, P., Monaghan, J. E., Gray, P., Harame, D., Khater, M., Liu, Q., Vallett, A., Zetterlund, B., Jain, V., Kaushal, V.

“…The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was…”
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Predictive TCAD modeling of the scaling-induced, reverse-biased, emitter-base tunneling current in SiGe HBTs by Chakraborty, P. S., Moen, K. A., Cressler, J. D.

“…We investigate, for the first time, predictive TCAD modeling of scaling-induced, reverse-biased emitter-base junction tunneling current in state-of-the-art…”
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An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds by Jiahui Yuan, Cressler, J D, Moen, K A, Chakraborty, P S

“…A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using…”
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Improved 2-D regional transit time analysis for optimized scaling of SiGe HBTs by Moen, K A, Jiahui Yuan, Chakraborty, P S, Bellini, M, Cressler, J D, Ho, H, Yasuda, H, Wise, R

“…A new method for two-dimensional (2-D) regional transit time analysis in SiGe HBTs is presented, using a commercially-available TCAD suite with hydrodynamic…”
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Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS by Arora, R, Moen, K A, Madan, A, Cressler, J D, Enxia Zhang, Fleetwood, D M, Schrimpf, R D, Sutton, A K, Nayfeh, H M

“…We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two…”
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Optimization of SiGe bandgap-based circuits for up to 300 degree C operation by Thomas, D B, Najafizadeh, L, Cressler, J D, Moen, KA, Lourenco, N

“…An investigation of the performance and reliability issues associated with operating silicon-germanium (SiGe) devices and circuits at temperatures up to 300…”
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The effect of adrenaline on peripheral vascular resistance at different temperatures in a hind part preparation of rainbow trout (Salmo gairdnerii R.) by Moen, K A, Wisnes, A R, Elsayed, E A, Eliassen, E E

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Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic by Moen, K. A., Phillips, S. D., Cressler, J. D.

“…Single-event transient simulations are performed on a Gb/s SiGe BiCMOS master/slave D flip-flop circuit, employing both a decoupled current-injection SET…”
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