Search Results - "Mock, Alyssa L."

Band Alignment of ScxAl1-xN/GaN Heterojunctions by Jin, Eric N, Hardy, Matthew T, Mock, Alyssa L, Lyons, John L, Kramer, Alan R, Tadjer, Marko J, Nepal, Neeraj, Katzer, D Scott, Meyer, David J

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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry by Mock, Alyssa L., Jacobs, Alan G., Jin, Eric N., Hardy, Matthew T., Tadjer, Marko J.

“…Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the…”
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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy Sc x Al1− x N determined by infrared spectroscopic ellipsometry by Mock, Alyssa L., Jacobs, Alan G., Jin, Eric N., Hardy, Matthew T., Tadjer, Marko J.

“…Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the…”
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Influence of oxygen partial pressure on properties of monoclinic Ga2O3 deposited on sapphire substrates by Freitas, Jaime A., Culbertson, James C., Nepal, Neeraj, Mock, Alyssa L., Tadjer, Marko J., Feng, Zixuan, Zhao, Hongping

“…Thin monoclinic Ga2O3 films were deposited on c-plane sapphire substrates by low pressure chemical vapor deposition. The thin films were synthesized using high…”
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Band Alignment of Sc x Al 1– x N/GaN Heterojunctions by Jin, Eric N., Hardy, Matthew T., Mock, Alyssa L., Lyons, John L., Kramer, Alan R., Tadjer, Marko J., Nepal, Neeraj, Katzer, D. Scott, Meyer, David J.

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Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy by Tadjer, Marko J., Sasaki, Kohei, Wakimoto, Daiki, Anderson, Travis J., Mastro, Michael A., Gallagher, James C., Jacobs, Alan G., Mock, Alyssa L., Koehler, Andrew D., Ebrish, Mona, Hobart, Karl D., Kuramata, Akito

“…Heterojunction field-effect transistors based on the β-(AlxGa1−x)2O3/Ga2O3 heterostructure grown by ozone-assisted molecular beam epitaxy were demonstrated for…”
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Band Alignment of Sc x Al1–x N/GaN Heterojunctions by Jin, Eric N, Hardy, Matthew T, Mock, Alyssa L, Lyons, John L, Kramer, Alan R, Tadjer, Marko J, Nepal, Neeraj, Katzer, D. Scott, Meyer, David J

“…ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of…”
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