Search Results - "Miyawaki, Yudai"

  • Showing 1 - 17 results of 17
Refine Results
  1. 1

    CF3+ fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C5F10O, in gas phase by Kondo, Yusuke, Ishikawa, Kenji, Hayashi, Toshio, Miyawaki, Yudai, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-04-2015)
    “…The gas phase fragmentations of perfluoro-propyl-vinyl ether (PPVE, C5F10O) are studied experimentally. Dominant fragmentations of PPVE are found to be the…”
    Get full text
    Journal Article
  2. 2

    Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas by Miyawaki, Yudai, Kondo, Yusuke, Sekine, Makoto, Ishikawa, Kenji, Hayashi, Toshio, Takeda, Keigo, Kondo, Hiroki, Yamazaki, Atsuyo, Ito, Azumi, Matsumoto, Hirokazu, Hori, Masaru

    Published in Jpn J Appl Phys (25-01-2013)
    “…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C 5 HF 7 ) gas with addition of O 2 and dilution…”
    Get full text
    Journal Article
  3. 3
  4. 4
  5. 5

    Etching Enhancement Followed by Nitridation on Low-$k$ SiOCH Film in Ar/C5F10O Plasma by Miyawaki, Yudai, Shibata, Emi, Kondo, Yusuke, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Okamoto, Hidekazu, Sekine, Makoto, Hori, Masaru

    Published in Jpn J Appl Phys (01-02-2013)
    “…The etching rates of low-dielectric-constant (low-$k$), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C 5 F 10 O plasma etching in…”
    Get full text
    Journal Article
  6. 6
  7. 7

    Reactive Ion Etching of Carbon Nanowalls by Kondo, Shingo, Kondo, Hiroki, Miyawaki, Yudai, Sasaki, Hajime, Kano, Hiroyuki, Hiramatsu, Mineo, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-07-2011)
    “…Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon…”
    Get full text
    Journal Article
  8. 8

    Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton by Kondo, Yusuke, Ishikawa, Kenji, Hayashi, Toshio, Miyawaki, Yudai, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-04-2015)
    “…Etching rates of silicon nitrides (SiN), SiO2, and poly-Si films for CH2F2 plasmas diluted with rare gases are presented by comparing the effects of flow rates…”
    Get full text
    Journal Article
  9. 9

    Silicon nitride etching performance of CH sub(2)F sub(2) plasma diluted with argon or krypton by Kondo, Yusuke, Ishikawa, Kenji, Hayashi, Toshio, Miyawaki, Yudai, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-04-2015)
    “…Etching rates of silicon nitrides (SiN), SiO sub(2), and poly-Si films for CH sub(2)F sub(2) plasmas diluted with rare gases are presented by comparing the…”
    Get full text
    Journal Article
  10. 10
  11. 11
  12. 12

    CF sub(3) super(+) fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C sub(5)F sub(10)O, in gas phase by Kondo, Yusuke, Ishikawa, Kenji, Hayashi, Toshio, Miyawaki, Yudai, Takeda, Keigo, Kondo, Hiroki, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-04-2015)
    “…The gas phase fragmentations of perfluoro-propyl-vinyl ether (PPVE, C sub(5)F sub(10)O) are studied experimentally. Dominant fragmentations of PPVE are found…”
    Get full text
    Journal Article
  13. 13

    Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C 5 F 10 O Plasma by Miyawaki, Yudai, Shibata, Emi, Kondo, Yusuke, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Okamoto, Hidekazu, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-02-2013)
    “…The etching rates of low-dielectric-constant (low- k ), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C 5 F 10 O plasma etching in…”
    Get full text
    Journal Article
  14. 14

    Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C sub(5)F sub(10)O Plasma by Miyawaki, Yudai, Shibata, Emi, Kondo, Yusuke, Takeda, Keigo, Kondo, Hiroki, Ishikawa, Kenji, Okamoto, Hidekazu, Sekine, Makoto, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-02-2013)
    “…The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C sub(5)F sub(10)O plasma etching in…”
    Get full text
    Journal Article
  15. 15
  16. 16

    Highly Selective Etching of SiO sub(2) over Si sub(3)N sub(4) and Si in Capacitively Coupled Plasma Employing C sub(5)HF sub(7) Gas by Miyawaki, Yudai, Kondo, Yusuke, Sekine, Makoto, Ishikawa, Kenji, Hayashi, Toshio, Takeda, Keigo, Kondo, Hiroki, Yamazaki, Atsuyo, Ito, Azumi, Matsumoto, Hirokazu, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-01-2013)
    “…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C sub(5)HF sub(7)) gas with addition of O sub(2)…”
    Get full text
    Journal Article
  17. 17

    Highly Selective Etching of SiO 2 over Si 3 N 4 and Si in Capacitively Coupled Plasma Employing C 5 HF 7 Gas by Miyawaki, Yudai, Kondo, Yusuke, Sekine, Makoto, Ishikawa, Kenji, Hayashi, Toshio, Takeda, Keigo, Kondo, Hiroki, Yamazaki, Atsuyo, Ito, Azumi, Matsumoto, Hirokazu, Hori, Masaru

    Published in Japanese Journal of Applied Physics (01-01-2013)
    “…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C 5 HF 7 ) gas with addition of O 2 and dilution…”
    Get full text
    Journal Article