Search Results - "Miyawaki, Yudai"
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CF3+ fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C5F10O, in gas phase
Published in Japanese Journal of Applied Physics (01-04-2015)“…The gas phase fragmentations of perfluoro-propyl-vinyl ether (PPVE, C5F10O) are studied experimentally. Dominant fragmentations of PPVE are found to be the…”
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Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
Published in Jpn J Appl Phys (25-01-2013)“…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C 5 HF 7 ) gas with addition of O 2 and dilution…”
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Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
Published in Japanese Journal of Applied Physics (01-05-2013)“…The wavelength dependence of SiN x :H/Si interface defect generation caused by vacuum ultraviolet (VUV)/UV radiation from plasma etching processes was…”
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Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
Published in Japanese Journal of Applied Physics (01-02-2012)“…Photon-enhanced etching of SiN x :H films caused by the interaction between vacuum ultraviolet (VUV)/ultraviolet (UV) radiation and radicals in the…”
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Etching Enhancement Followed by Nitridation on Low-$k$ SiOCH Film in Ar/C5F10O Plasma
Published in Jpn J Appl Phys (01-02-2013)“…The etching rates of low-dielectric-constant (low-$k$), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C 5 F 10 O plasma etching in…”
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Reactive Ion Etching of Carbon Nanowalls
Published in Japanese Journal of Applied Physics (01-07-2011)“…Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon…”
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Silicon nitride etching performance of CH2F2 plasma diluted with argon or krypton
Published in Japanese Journal of Applied Physics (01-04-2015)“…Etching rates of silicon nitrides (SiN), SiO2, and poly-Si films for CH2F2 plasmas diluted with rare gases are presented by comparing the effects of flow rates…”
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Silicon nitride etching performance of CH sub(2)F sub(2) plasma diluted with argon or krypton
Published in Japanese Journal of Applied Physics (01-04-2015)“…Etching rates of silicon nitrides (SiN), SiO sub(2), and poly-Si films for CH sub(2)F sub(2) plasmas diluted with rare gases are presented by comparing the…”
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10
Silicon nitride etching performance of CH 2 F 2 plasma diluted with argon or krypton
Published in Japanese Journal of Applied Physics (01-04-2015)Get full text
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11
CF 3 + fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C 5 F 10 O, in gas phase
Published in Japanese Journal of Applied Physics (01-04-2015)Get full text
Journal Article -
12
CF sub(3) super(+) fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C sub(5)F sub(10)O, in gas phase
Published in Japanese Journal of Applied Physics (01-04-2015)“…The gas phase fragmentations of perfluoro-propyl-vinyl ether (PPVE, C sub(5)F sub(10)O) are studied experimentally. Dominant fragmentations of PPVE are found…”
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13
Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C 5 F 10 O Plasma
Published in Japanese Journal of Applied Physics (01-02-2013)“…The etching rates of low-dielectric-constant (low- k ), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C 5 F 10 O plasma etching in…”
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Journal Article -
14
Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C sub(5)F sub(10)O Plasma
Published in Japanese Journal of Applied Physics (01-02-2013)“…The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C sub(5)F sub(10)O plasma etching in…”
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15
Reactive Ion Etching of Carbon Nanowalls
Published in Japanese Journal of Applied Physics (01-07-2011)Get full text
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16
Highly Selective Etching of SiO sub(2) over Si sub(3)N sub(4) and Si in Capacitively Coupled Plasma Employing C sub(5)HF sub(7) Gas
Published in Japanese Journal of Applied Physics (01-01-2013)“…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C sub(5)HF sub(7)) gas with addition of O sub(2)…”
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Journal Article -
17
Highly Selective Etching of SiO 2 over Si 3 N 4 and Si in Capacitively Coupled Plasma Employing C 5 HF 7 Gas
Published in Japanese Journal of Applied Physics (01-01-2013)“…In a dual-frequency-excited parallel plate capacitively coupled plasma employing a heptafluoro-cyclo-pentene (C 5 HF 7 ) gas with addition of O 2 and dilution…”
Get full text
Journal Article