Search Results - "Miyanagi, Toshiyuki"

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  1. 1
    Annealing effects on single Shockley faults in 4H-SiC

    Annealing effects on single Shockley faults in 4H-SiC by Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

    Published in Applied physics letters (07-08-2006)
    “…We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial layers by photoluminescence mapping in combination with high-power…”
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  2. 2
    Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

    Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations by Tsuchida, Hidekazu, Kamata, Isaho, Miyanagi, Toshiyuki, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…We investigate basal plane dislocations (BPDs) in thick 4H–SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes…”
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  3. 3
    Annealing effects on single Shockley faults in 4 H - Si C

    Annealing effects on single Shockley faults in 4 H - Si C by Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

    Published in Applied physics letters (07-08-2006)
    “…We investigated the annealing effect on single Shockley faults (SSFs) in the SiC epitaxial layers by photoluminescence mapping in combination with high-power…”
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  4. 4
    A 4.15 kV 9.07-mΩ . cm2 4H-SiC Schottky-Barrier diode using Mo contact annealed at high temperature

    A 4.15 kV 9.07-mΩ . cm2 4H-SiC Schottky-Barrier diode using Mo contact annealed at high temperature by NAKAMURA, Tomonori, MIYANAGI, Toshiyuki, KAMATA, Isaho, JIKIMOTO, Tamotsu, TSUCHIDA, Hidekazu

    Published in IEEE electron device letters (2005)
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  5. 5
    IEGT design concept against operation instability and its impact to application

    IEGT design concept against operation instability and its impact to application by Omura, I., Demon, T., Miyanagi, T., Ogura, T., Ohashi, H.

    “…IEGT's (Injection Enhanced Gate transistors) and HV-IGBT's are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or…”
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