Search Results - "Mitrovic, I."

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures by Mitrovic, I. Z., Weerakkody, A. D., Sedghi, N., Ralph, J. F., Hall, S., Dhanak, V. R., Luo, Z., Beeby, S.

“…We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar…”
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Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs by Biswas, S., Paul, A. D., Das, P., Tiwary, P., Edwards, H. J., Dhanak, V. R., Mitrovic, I. Z., Mahapatra, R.

“…103). It introduces the oxygen vacancies in HfO x which controls the formation and rupture of filament and plays an important role in improving RS…”
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Compositional tuning of atomic layer deposited MgZnO for thin film transistors by Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., Hall, S.

“…Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of…”
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Atomic layer deposition of Nb-doped ZnO for thin film transistors by Shaw, A., Wrench, J. S., Jin, J. D., Whittles, T. J., Mitrovic, I. Z., Raja, M., Dhanak, V. R., Chalker, P. R., Hall, S.

“…We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were…”
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Molecular analysis of metallo-beta-lactamase-producing Pseudomonas aeruginosa in Switzerland 2022–2023 by Findlay, Jacqueline, Raro, Otavio Hallal Ferreira, Poirel, Laurent, Nordmann, Patrice

“…Objectives The occurrence of metallo-beta-lactamase-producing Pseudomonas aeruginosa (MBL-PA) isolates is increasing globally, including in Switzerland. The…”
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Influence of interlayer properties on the characteristics of high-k gate stacks by Engstrom, O., Mitrovic, I.Z., Hall, S.

“…► The shape of MOS high-k/IL interfaces influences electric data. ► CET data for IL become underestimated for gradual interfaces. ► Thinning gradual IL…”
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An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment by Fang, Y X, Xu, W.Y., Mitrovic, I Z, Yang, L, Zhao, C, Zhao, C Z

“…In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment…”
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Water-induced Combustion-processed Metal-oxide Synaptic Transistor by Liu, Qihan, Zhao, C, Liu, Y, Mitrovic, I Z, Xu, W Y, Yang, L, Wang, Z, Wei, W, Wu, Y, Yu, X

“…In this study, we describe combustion-processed high-quality Li-AlO x thin films and their implementation in In- 2 O 3 synaptic transistors by a low…”
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Pricing and Reimbursement Analysis of Bacillus Calmette-Guérin (BCG) Immunotherapy for Bladder Cancer by Bekcic, S, Mitrovic, I, Baltezarevic, D, Radojevic, V, Samardzic, J, Milenkovic, V

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Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3 by Mitrovic, I.Z., Przewlocki, H.M., Piskorski, K., Simutis, G., Dhanak, V.R., Sedghi, N., Hall, S.

“…This paper presents experimental evidence on effective work function tuning due to the presence of oxygen at the TiNx/LaLuO3 interface. Two complementary…”
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Ellipsometric analysis of mixed metal oxides thin films by Buiu, O., Davey, W., Lu, Y., Mitrovic, I.Z., Hall, S.

“…The optical dielectric function of hafnium oxide and hafnium silicate thin films was extracted from spectroscopic ellipsometry measurements. The dielectric…”
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Spectroellipsometric assessment of HfO2 thin films by BUIU, O, LU, Y, MITROVIC, I. Z, HALL, S, CHALKER, P, POTTER, R. J

“…Present paper looks into the possibilities and limitations of near ultraviolet-visible range spectroscopic ellipsometry in investigating HfO2 thin films…”
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Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition by Mather, S., Sedghi, N., Althobaiti, M., Mitrovic, I.Z., Dhanak, V., Chalker, P.R., Hall, S.

“…[Display omitted] •Ge gate MOS devices were investigated due to its applicability to sub 16nm node pMOST technology.•GeO2/Al2O3/HfO2 gate stacks were grown by…”
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Development of modified pyrophyllite carbon paste electrode for carbendazim detection by Mitrović Rajić, Anđela I., Milićević, Jelena S., Grbović Novaković, Jasmina D.

“…This study aims to design the pyrophyllite-adapted carbon paste electrode (pCPE) and test it for potential use in wastewater purification systems. Structural…”
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Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements by Fang, Y.X., Zhao, C., Mitrovic, I.Z., Hall, S., Yang, L., Zhao, C.Z.

“…In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an…”
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Interface engineering of Ge using thulium oxide: Band line-up study by Mitrovic, I.Z., Althobaiti, M., Weerakkody, A.D., Sedghi, N., Hall, S., Dhanak, V.R., Chalker, P.R., Henkel, C., Dentoni Litta, E., Hellström, P.-E., Östling, M.

“…•Thulium oxide layers on germanium were investigated.•The valence band offset was found to be 2.95eV.•The band gap of thulium oxide was found to be 5.3eV from…”
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Estimate of dielectric density using spectroscopic ellipsometry by Davey, W., Buiu, O., Werner, M., Mitrovic, I.Z., Hall, S., Chalker, P.

“…The optical dielectric functions for hafnium oxide and hafnium silicate films were extracted from spectroscopic ellipsometry measurements and the density then…”
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Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements by Shaw, A., Jin, J.D., Mitrovic, I.Z., Hall, S., Wrench, J.S., Chalker, P.R.

“…The sub-band gap density of states (DOS) of Nb doped ZnO thin film transistors were extracted using a multi-frequency capacitance-voltage (C-V) method. The…”
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Current transport mechanisms in (HfO2)x(SiO2) 1−x/SiO2gate stacks by Mitrovic, I.Z., Lu, Y., Buiu, O., Hall, S.

“…This paper investigates current transport mechanisms in MOCVD grown (HfO2)x(SiO2)1-x/SiO2 (0.3x 1) gate stacks using the temperature dependence of leakage…”
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics by Gottlob, H.D.B., Schmidt, M., Stefani, A., Lemme, M.C., Kurz, H., Mitrovic, I.Z., Davey, W.M., Hall, S., Werner, M., Chalker, P.R., Cherkaoui, K., Hurley, P.K., Piscator, J., Engström, O., Newcomb, S.B.

“…We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high- k gate dielectric in a gate first integration scheme. There silicon…”
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