Search Results - "Mitrofanov, Maxim I."

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy by Pozina, Galia, Gubaydullin, Azat R., Mitrofanov, Maxim I., Kaliteevski, Mikhail A., Levitskii, Iaroslav V., Voznyuk, Gleb V., Tatarinov, Evgeniy E., Evtikhiev, Vadim P., Rodin, Sergey N., Kaliteevskiy, Vasily N., Chechurin, Leonid S.

“…We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by…”
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Emission Properties of GaN Planar Hexagonal Microcavities by Pozina, Galia, Hemmingsson, Carl, Belonovskii, Alexei V., Levitskii, Iaroslav V., Mitrofanov, Maxim I., Girshova, Elizaveta I., Ivanov, Konstantin A., Rodin, Sergey N., Morozov, Konstantin M., Evtikhiev, Vadim P., Kaliteevski, Mikhail A.

“…Fabrication of microcavities based on III‐nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of…”
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Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy by Pozina, Galia, Ivanov, Konstantin A., Mitrofanov, Maxim I., Kaliteevski, Mikhail A., Morozov, Konstantin M., Levitskii, Iaroslav V., Voznyuk, Gleb V., Evtikhiev, Vadim P., Rodin, Sergey N.

“…GaN planar nanowires (NWs) are fabricated by selective area metal‐organic vapor phase epitaxy using focused ion beam etching of trench pattern in the Si3N4…”
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Emission Properties of GaN Planar Hexagonal Microcavities by Pozina, Galia, Hemmingsson, Carl, Belonovskii, Alexei V., Levitskii, Iaroslav V., Mitrofanov, Maxim I., Girshova, Elizaveta I., Ivanov, Konstantin A., Rodin, Sergey N., Morozov, Konstantin M., Evtikhiev, Vadim P., Kaliteevski, Mikhail A.

“…Planar Hexagonal Microcavities GaN planar hexagonal microcavities are fabricated using a selective area metal‐organic vapor phase epitaxy. The almost ideal…”
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Modification of Excitonic Emission in GaN Microcavities Formed by Planar Hexagonal Micro-Nuts Grown by Selective Area Epitaxy by Pozina, Galia, Belonovski, Alexey V, Levitskii, Iaroslav V, Mitrofanov, Maxim I, Girshova, Elizaveta I, Ivanov, Konstantin A, Voznyuk, Gleb V, Rodin, Sergei N, Morozov, Konstantin M, Evtikhiev, Vadim P, Kaliteevski, Mikhail A

“…GaN-based resonators supporting whispering gallery modes are suggested as a promising approach for fabrication of efficient nanophotonic applications. A…”
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