Search Results - "Mishustin, V. G."

Study of Deep Levels in a HIT Solar Cell by Vikhrov, S. P., Vishnyakov, N. V., Gudzev, V. V., Ermachikhin, A. V., Shilina, D. V., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Terukov, E. I., Titov, A. S.

“…The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a -Si:H( p )/ a -Si:H( i )/ c -Si( n )/ a -Si:H( i )/ a -Si:H( n + )/ITO/Ag…”
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Speciality Of Poisson Equation Solution And Calculation Of Barrier Profile On The Interface To Non-Crystalline Semiconductor by Vikhrov, S P, Vishnyakov, N V, Mishustin, V G, Popov, A A

“…The Poisson equation is solved for obtaining space charge distribution and electrostatic potential profile depending upon location in depletion layer on the…”
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Investigation of electric field distribution across the barrier silicon solar cells by Almazov, D. V., Maslov, A. D., Kholomina, T. A., Mishustin, V. G., Vishnyakov, N. V., Konkov, O. I.

“…In this paper the distribution of built-in electric field in p-i-n based on a-Si:H and heterojunction solar cells based on a-Si:H/c-Si is investigated. The…”
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Influence of the localized states on the collection efficiency of photogenerated charge carries in solar cells based on a-Si:H by Almazov, D. V., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Vikhrov, S. P., Vishnyakov, N. V.

“…The deep understanding of physical processes and availability of accurate mathematical models are necessary for design and manufacturing of high efficiency…”
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Formation of Potential Barriers in Undoped Disordered Semiconductors by Vishnyakov, N. V.

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Analysis and refinement of mathematical tools for modified time-of-flight method by Vikhrov, S. P., Vishnyakov, N. V., Maslov, A. A., Mishustin, V. G.

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Physical model to calculate current-voltage characteristics of double-junction solar cells based on a-Si:H and a-SiC:H by Maslov, A. D., Mishustin, V. G., Piryugin, A. V., Vishnyakov, N. V.

“…In this paper we suggest a model to calculate current-voltage characteristics of double-junction solar cells based on a-Si:H/a-SiC:H. The model considers…”
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Experimental method to measure built-in electric fields in multilayer barrier homo- and heterostructures by Maslov, A. D., Mishustin, V. G., Romanov, A. G., Vikhrov, S. P., Vishnyakov, N. V.

“…In this paper we linked electrophysical properties of multilayer barrier structures based on crystalline and disordered semiconductors with density of…”
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Simulation of electrophysical parameters of multilayer barrier homo- and heterostructures based on non-crystalline semiconductors by Kusakin, D. S., Mishustin, V. G., Piryugin, A. V., Vikhrov, S. P.

“…This work is related with development of a physical model of potential barriers in semiconductor structures based on non-crystalline semiconductors. This model…”
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Simulation of current-voltage characteristics of multilayer solar cells based on crystalline and non-crystalline semiconductors by Maslov, A. D., Loginov, D. S., Mishustin, V. G., Piryugin, A. V., Vishnyakov, N. V.

“…The present paper is devoted to research of multilayer barrier structures for solar cells on the basis of crystalline and disordered semiconductors. Influence…”
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Experimental equipment to investigate deep energy levels in semiconductor barrier structures with high leakage current by Gudzev, V.V., Litvinov, V.G., Mishustin, V.G., Maslov, A.D., Zubkov, M.V.

“…In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline…”
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Spatial localization of dominating deep centers in multicrystalline silicon solar cells by Maslov, A. D., Ermachikhin, A. V., Bezuglaya, E. V., Mishustin, V. G., Vorobyov, Yu. V., Gudzev, V. V.

“…In this paper we focused on separation of dominating recombination region that limits total charge carrier lifetime and efficiency in conventional…”
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Investigation of recombination processes in multicrystalline silicon solar cells by Ermachikhin, A. V., Kholomina, T. A., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Vikhrov, S. P., Vishnyakov, N. V.

“…In this paper the results of charge carrier bulk lifetime in multicrystalline silicon solar cells obtained by mathematical simulation and experimental…”
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