Search Results - "Mishra, Umesh K"

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure by Chowdhury, Srabanti, Mishra, Umesh K.

“…Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology…”
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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method by Meneghini, M., Ronchi, N., Stocco, A., Meneghesso, G., Mishra, U. K., Yi Pei, Zanoni, E.

“…This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based high-electron mobility transistors (HEMTs). The…”
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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs by Romanczyk, Brian, Zheng, Xun, Guidry, Matthew, Li, Haoran, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.

“…This letter reports on the improvement of the large-signal W-band power performance of nitrogen-polar gallium nitride deep recess high electron mobility…”
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High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz by Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.

“…Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers,…”
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Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates by Pasayat, Shubhra S., Gupta, Chirag, Wong, Matthew S., Wang, Yifan, Nakamura, Shuji, Denbaars, Steven P., Keller, Stacia, Mishra, Umesh K.

“…The compliant behavior of high fill-factor 10 × 10 μm2 square patterned 60–140 nm thick GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a…”
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N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance by Koksaldi, Onur S., Haller, Jeffrey, Li, Haoran, Romanczyk, Brian, Guidry, Matthew, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.

“…Nitrogen polar (N-Polar) GaN high-electron-mobility transistors (HEMT) targeting high-voltage switching applications were fabricated on epi-layers grown by…”
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Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors by Krishna, Athith, Raj, Aditya, Hatui, Nirupam, Keller, Stacia, Mishra, Umesh K.

“…In this study, the metal-organic chemical vapor deposition growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were…”
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High breakdown voltage p-n diodes on GaN on sapphire by MOCVD by Gupta, Chirag, Enatsu, Yuuki, Gupta, Geetak, Keller, Stacia, Mishra, Umesh K.

“…In order to achieve high breakdown voltage in GaN vertical power devices, low threading dislocation density and low background carrier concentration is…”
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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition by Cruz, Samantha C., Keller, Stacia, Mates, Thomas E., Mishra, Umesh K., DenBaars, Steven P.

“…In this study we investigated the incorporation of the dopants Si, Mg, and Fe and the unintentional impurities O and C in GaN films grown on m -plane ( 1 0 1 ¯…”
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N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning by Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.

“…The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs)…”
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Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition by Reilly, Caroline E., Lund, Cory, Nakamura, Shuji, Mishra, Umesh K., DenBaars, Steven P., Keller, Stacia

“…N-polar InN quantum dots and thin layers grown by metal organic chemical vapor deposition were shown to exhibit tunable emission from around 1.00 μm to longer…”
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Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures by Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico

“…This paper reports on the hot-carrier effects and semi-on-state behavior of nitrogen-polar GaN MIS-HEMTs at cryogenic temperatures (from 300 K down to 100 K)…”
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors by Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki

“…Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably,…”
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Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography by Bonef, Bastien, Catalano, Massimo, Lund, Cory, Denbaars, Steven P., Nakamura, Shuji, Mishra, Umesh K., Kim, Moon J., Keller, Stacia

“…Energy dispersive X-ray spectroscopy (EDX) in scanning transmission electron microscopy and atom probe tomography are used to characterize N-polar InGaN/GaN…”
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Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs by Bisi, Davide, De Santi, Carlo, Meneghini, Matteo, Wienecke, Steven, Guidry, Matt, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K., Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports on the observation of hot-electron and impact-ionization mechanisms in N-polar GaN-based MIS-HEMTs designed for high frequency (RF)…”
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Growth of high purity N-polar (In,Ga)N films by Lund, Cory, Nakamura, Shuji, DenBaars, Steven P., Mishra, Umesh K., Keller, Stacia

“…In this work, secondary ion mass spectroscopy was used to study carbon and oxygen impurity incorporation in N-polar [000–1] GaN films grown by MOCVD. The…”
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Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN by Pasayat, Shubhra S, Gupta, Chirag, Wang, Yifan, DenBaars, Steven P, Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K

“…The compliant behavior of densely packed 10 × 10 µm square patterned InGaN layers on top of porous GaN is demonstrated. The elastic relaxation of the InGaN…”
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Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch by Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti

“…This letter reports on the dynamic <inline-formula> <tex-math notation="LaTeX">R_{\text{ON}} </tex-math></inline-formula> performance of large-area GaN…”
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Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures by Kaun, Stephen W., Burke, Peter G., Hoi Wong, Man, Kyle, Erin C. H., Mishra, Umesh K., Speck, James S.

“…AlxGa1−xN/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in…”
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Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels by Li, Haoran, Wienecke, Steven, Romanczyk, Brian, Ahmadi, Elaheh, Guidry, Matthew, Zheng, Xun, Keller, Stacia, Mishra, Umesh K.

“…A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by…”
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