Search Results - "Miranda, Enrique A."

Compact Modeling of Complementary Resistive Switching Devices Using Memdiodes by Miranda, Enrique A., Frohlich, Karol

“…In spite of the apparent simplicity of the system under study, compact modeling of complementary resistive switching (CRS) devices, i.e., two antiserially…”
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Application of the Clustering Model to Time-Correlated Oxide Breakdown Events in Multilevel Antifuse Memory Cells by Gorriz, Jordi Munoz, Gonzalez, Mireia Bargallo, Campabadal, Francesca, Sune, Jordi, Miranda, Enrique A.

“…Time statistics for successive breakdown (BD) events in Al 2 O 3 /HfO 2 -based nanolaminates aimed to the development of multilevel one-time programmable (OTP)…”
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Using reverse engineering techniques to infer a system use case model by Miranda, Enrique A., Berón, Mario, Montejano, Germán, Riesco, Daniel

“…Summary In this article, a strategy that seeks to assist the arduous cognitive process that involves understanding a GUI‐based system is presented. In order to…”
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Analysis and Simulation of the Postbreakdown I-V Characteristics of n-MOS Transistors in the Linear Response Regime by Miranda, Enrique A., Kawanago, Takamasa, Kakushima, Kuniyuki, Sune, Jordi, Iwai, Hiroshi

“…A simple yet accurate model for the postbreakdown output characteristics of advanced n-MOS transistors with metal gate (W) and high-κ (La 2 O 3 , equivalent…”
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Model for the Resistive Switching Effect in \hbox MIM Structures Based on the Transmission Properties of Narrow Constrictions by Miranda, Enrique A, Walczyk, Christian, Wenger, Christian, Schroeder, Thomas

“…A physics-based analytical model for the current-voltage (I-V) characteristics corresponding to the low and high resistive states in electroformed…”
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Analysis and Simulation of the Postbreakdown [Formula Omitted] Characteristics of n-MOS Transistors in the Linear Response Regime by Miranda, Enrique A, Kawanago, Takamasa, Kakushima, Kuniyuki, Sune, Jordi, Iwai, Hiroshi

“…A simple yet accurate model for the postbreakdown output characteristics of advanced n-MOS transistors with metal gate (W) and high-[Formula Omitted] gate…”
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Model for the Resistive Switching Effect in [Formula Omitted] MIM Structures Based on the Transmission Properties of Narrow Constrictions by Miranda, Enrique A, Walczyk, Christian, Wenger, Christian, Schroeder, Thomas

“…A physics-based analytical model for the current-voltage ([Formula Omitted]-[Formula Omitted]) characteristics corresponding to the low and high resistive…”
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Model for the Resistive Switching Effect in hbox HfO 2 MIM Structures Based on the Transmission Properties of Narrow Constrictions by Miranda, Enrique A, Walczyk, Christian, Wenger, Christian, Schroeder, Thomas

“…A physics-based analytical model for the current-voltage ( I - V ) characteristics corresponding to the low and high resistive states in electroformed…”
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