Search Results - "Minsky, M.S"

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells by Keller, S., Chichibu, S.F., Minsky, M.S., Hu, E., Mishra, U.K., DenBaars, S.P.

“…InGaN/GaN single and multi quantum wells have been grown by metal-organic chemical vapor deposition, varying the growth rate of well and barrier layers as well…”
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Optical properties of InGaN quantum wells by Chichibu, S.F, Abare, A.C, Mack, M.P, Minsky, M.S, Deguchi, T, Cohen, D, Kozodoy, P, Fleischer, S.B, Keller, S, Speck, J.S, Bowers, J.E, Hu, E, Mishra, U.K, Coldren, L.A, DenBaars, S.P, Wada, K, Sota, T, Nakamura, S

“…The emission mechanisms of strained InGaN quantum wells (QWs) were shown to vary depending on the well thickness L and InN molar fraction x. The QW resonance…”
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Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature by Sun, C.-K., Chiu, T.-L., Keller, S., Wang, G., Minsky, M. S., DenBaars, S. P., Bowers, J. E.

“…We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was…”
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Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques by Chi-Kuang Sun, Keller, S., Tien-Lung Chiu, Wang, G., Minsky, M.S., Bowers, J.E., DenBaars, S.P.

“…We present a well-width-dependent study of InGaN-GaN single-quantum wells using a time-resolved photoluminescence (PL) technique. At room temperature (RT),…”
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Photoluminescence Excitation Spectroscopy of InxGa1-xN/GaN Multiple Quantum Wells with Various In Compositions by Sasaki, C., Iwata, M., Yamada, Y., Taguchi, T., Watanabe, S., Minsky, M.S., Takeuchi, T., Yamada, N.

“…Luminescence properties of InxGa1—xN/GaN multiple quantum wells (MQWs) with various In compositions have been studied by means of photoluminescence excitation…”
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Optical characterization of InGaN/GaN quantum well structures with Si-doped barriers by Vaschenko, G., Assis, L.S., Pidcock, R.L., Menoni, C.S., Minsky, M.S., Keller, S., Hu, E., DenBaars, S.P.

“…Summary form only given. The effect of Si doping on the optical properties of GaN and InGaN/GaN quantum well structures has recently attracted attention in…”
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Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells by Patel, D., Vaschenko, G., Menoni, C.S., Minsky, M.S., Keller, S., Hu, E., Mishra, U.K., DenBaars, S.P.

“…Summary form only given.It has been shown theoretically and experimentally that the built-in strain in semiconductor heterostructures can be tuned with…”
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Time-resolved Electroluminescence Of GaAsP Light-emitting Diodes by Fouquet, J.E., Saxena, R.R., Pont, L.O., Kao, T.M., Minsky, M.S.

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