Search Results - "Minoura, Yuichi"

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs by Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Yamada, Atsushi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Nakamura, Norikazu

“…GaN-based high-electron-mobility transistors (HEMTs) fabricated on SiC substrates were successfully bonded to single-crystal diamond heat spreader by a surface…”
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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers by Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki

“…This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer +…”
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An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader by Ohki, Toshihiro, Yamada, Atsushi, Minoura, Yuichi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Okamoto, Naoya, Joshin, Kazukiyo, Nakamura, Norikazu

“…This letter reports on an InAlGaN/GaN high-electron-mobility transistor (HEMT) employing a SiC/diamond-bonded heat spreader with a record high output power…”
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31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation by Yamada, Atsushi, Minoura, Yuichi, Kurahashi, Naoko, Kamada, Yoichi, Ohki, Toshihiro, Sato, Masaru, Nakamura, Norikazu

“…The study reports the findings on a quaternary InAlGaN/GaN high electron mobility transistor (HEMT) employing a thermal chemical vapor deposition (TCVD)…”
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31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN x Passivation by Yamada, Atsushi, Minoura, Yuichi, Kurahashi, Naoko, Kamada, Yoichi, Ohki, Toshihiro, Sato, Masaru, Nakamura, Norikazu

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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment by Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

“…Herein, Al2O3/InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H2O vapor pretreatment to decrease the amount of…”
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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment by Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

“…Herein, Al 2 O 3 /InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H 2 O vapor pretreatment to decrease the…”
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Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma by Okamoto, Naoya, Takahashi, Atsushi, Minoura, Yuichi, Kumazaki, Yusuke, Ozaki, Shiro, Ohki, Toshihiro, Hara, Naoki, Watanabe, Keiji

“…In this study, the etching characteristics for fabricating deep GaN through-substrate vias at a high etching rate exceeding 1 μm/min using high density…”
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Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs by Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

“…We investigated a thermally stable and low trap density insulator for AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs)…”
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Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs by Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

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Remarkable Current Collapse Suppression in GaN HEMTs on Free-standing GaN Substrates by Kumazaki, Yusuke, Watanabe, Keiji, Ohki, Toshihiro, Kotani, Junji, Ozaki, Shiro, Niida, Yoshitaka, Makiyama, Kozo, Minoura, Yuichi, Okamoto, Naoya, Nakamura, Norikazu

“…The current collapse phenomena, particularly the trap-induced threshold voltage shift, was drastically reduced in GaN high-electron-mobility transistors…”
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3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier by Niida, Yoshitaka, Kamada, Yoichi, Ohki, Toshihiro, Ozaki, Shiro, Makiyama, Kozo, Minoura, Yuichi, Okamoto, Naoya, Sato, Masaru, Joshin, Kazukiyo, Watanabe, Keiji

“…We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has…”
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