Search Results - "Minoret, Stephane"

Development of Ni₂P Contact Technology and Its Integration on III-V Materials for 300 mm Si Photonics Platform by Boyer, Flore, Famulok, Romain, Minoret, Stephane, Coudurier, Nicolas, Jany, Christophe, Gergaud, Patrice, Rodriguez, Philippe

“…In order to assess their potential use as contact layers for Si photonics devices, Ni 2 P thin films were developed on a 300 mm platform. The Ni 2 P layers,…”
Get full text

Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias by Djomeni, Larissa, Mourier, Thierry, Minoret, Stéphane, Fadloun, Sabrina, Piallat, Fabien, Burgess, Steve, Price, Andrew, Zhou, Yun, Jones, Christopher, Mathiot, Daniel, Maitrejean, Sylvain

“…•The MOCVD TiN films are N-riched.•Plasma treatment changes the films from amorphous to 7nm crystal grain size.•The films have larger gap in Ti and N…”
Get full text

Ultra Wide Micro Bumps Interconnection Matrix for High Energy Particle Detection: Process and Assembly by Charbonnier, Jean, Assous, Myriam, Mourier, Thierry, Ribiere, Celine, Minoret, Stephane, Verrun, Sophie, Tissier, Pierre, Coquand, Remi, Bicer, Mehmet, Allain, Fabienne, Franiatte, Remi, Pares, Gabriel

“…Micro pillars and micro bumps interconnections are considered as mature technology for 3-D integration and chip stacking. However, in the framework of…”
Get full text

Through silicon via process characterization by integrated inspection/metrology solutions in visible and infrared domain by Devanciard, Nicolas, Rey, Stephane, Magis, Thomas, Minoret, Stephane, Beitia, Carlos, Alliata, Dario, Marx, David, Bachiraju, Prasad, Hart, Darcy, Thornell, John, Dudley, Russ

“…In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies,…”
Get full text

Advanced Metallizatisn Processes Integration as Manufacturing Worthy Solutions for > 10:1 Aspect Ratio Mid-Process TSV by Mourier, Thierry, Gottardi, Mathilde, Ribiere, Celine, Minoret, Stephane, Philip, Pierre-Emile, Romero, Gilles

“…For many years, TSV has become a key technology driver for 3D integration of heterogeneous devices. Among the different ways to create TSV, mid-process…”
Get full text

Silicon embedded line integration for high end passive silicon interposer by Charbonnier, Jean, Assous, Myriam, Bally, Jean-Philippe, Cuchet, Robert, Mourier, Thierry, Minoret, Stephane, Magis, Thomas, Toffoli, Alain, Allain, Fabienne, Simon, Gilles

“…As standard organic substrate packages and wire bonding are reaching their limits in term of wiring density and integration capacity, silicon interposer…”
Get full text

Electrical and morphological characterization for high integrated silicon interposer and technology transfer from 200 mm to 300mm wafer by Sunohara, Masahiro, Miyairi, Ken, Mori, Kenichi, Murayama, Kei, Charbonnier, Jean, Assous, Myriam, Bally, Jean-Philippe, Mourier, Thierry, Minoret, Stephane, Mercier, Denis, Toffoli, Alain, Allain, Fabienne, Martinez, Eugenie, Feldis, Helene, Simon, Gilles, Higashi, Mitsutoshi

“…To achieve high density and high speed transmission between chips, a silicon interposer with copper (Cu) Through Silicon Vias (TSVs) technologies have been…”
Get full text

6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts by Morvan, E., Gobil, Y., Morisot, F., Biscarat, J., Charles, M., Lugo, J., Divay, A., Medbouhi, M., Charlet, I., Delprato, J., Scheiblin, P., Rrustemi, B., Giry, A., Serhan, A., Ruel, S., Pimenta-Barros, P., Laulagnet, F., Minoret, S., Anotta, A., Billon, T., Duriez, B.

“…We report on the development of CMOS compatible SiN/AlN/GaN MIS-HEMT process on 200mm Si substrates for Ka-band power amplification. The combination of soft…”
Get full text