Search Results - "Minhwan Jeon"
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1
Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition
Published in Advanced materials (Weinheim) (16-09-2015)“…By plasma‐enhanced chemical vapor deposition, a molybdenum disulfide (MoS2) thin film is synthesized directly on a wafer‐scale plastic substrate at below 300…”
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Journal Article -
2
Growth and characterization of high quality AlN using combined structure of low temperature buffer and superlattices for applications in the deep ultraviolet
Published in Japanese Journal of Applied Physics (01-08-2015)“…This study reports on the growth and characterization of AlN/AlxGa1−xN superlattices (SLs) for reduction of threading dislocations to grow high quality AlN…”
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3
Self-compensation effect in Si-doped Al0.55Ga0.45N layers for deep ultraviolet applications
Published in Japanese Journal of Applied Physics (17-04-2015)“…The self-compensation effect in Si-doped Al0.55Ga0.45N layers was investigated using different SiH4/III ratios. The degree of compressive strain changed with…”
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Journal Article -
4
GPS, Bluetooth and Wi-Fi tri-band antenna on metal frame of smartwatch
Published in 2016 IEEE International Symposium on Antennas and Propagation (APSURSI) (01-06-2016)“…A design concept of the loop antenna on the metal frame of a smartwatch device for GPS, Bluetooth and Wi-Fi 5 GHz is introduced. The antenna was designed with…”
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Conference Proceeding -
5
Controlled Layer-by-Layer Etching of MoS2
Published in ACS applied materials & interfaces (29-07-2015)“…Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for…”
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Journal Article -
6
AlN Nanostructures Fabricated on a Vicinal Sapphire (0001) Substrate
Published in Crystal growth & design (04-03-2015)“…We report a novel and facile method for the fabrication of various AlN nanostructures with Al polarity using polarity control and selective etching without a…”
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Journal Article -
7
Controlled Layer-by-Layer Etching of MoS 2
Published in ACS applied materials & interfaces (29-07-2015)Get full text
Journal Article -
8
Self-compensation effect in Si-doped Al 0.55 Ga 0.45 N layers for deep ultraviolet applications
Published in Japanese Journal of Applied Physics (01-05-2015)Get full text
Journal Article -
9
Self-compensation effect in Si-doped Al sub(0.55) Ga sub(0.45) N layers for deep ultraviolet applications
Published in Japanese Journal of Applied Physics (01-05-2015)“…The self-compensation effect in Si-doped Al sub(0.55) Ga sub(0.45) N layers was investigated using different SiH sub(4)/III ratios. The degree of compressive…”
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Journal Article -
10
Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution
Published in 2021 Symposium on VLSI Technology (13-06-2021)“…Sub-micron pixels have been widely adopted in recent CMOS image sensors to implement high resolution cameras in small form factors, i.e. slim mobile-phones…”
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Conference Proceeding -
11
Controlled Layer-by-Layer Etching of MoS
Published in ACS applied materials & interfaces (29-07-2015)“…Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for…”
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Journal Article -
12
Development of Advanced Inter-Color-Filter Grid on Sub-Micron-Pixel CMOS Image Sensor for Mobile Cameras with High Sensitivity and High Resolution
Published in 2021 Symposium on VLSI Circuits (13-06-2021)“…Sub-micron pixels have been widely adopted in recent CMOS image sensors to implement high resolution cameras in small form factors, i.e. slim mobile-phones…”
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Conference Proceeding