900 MHz 7.4 W SiGe heterojunction bipolar transistor

The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V re...

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Bibliographic Details

Published in:	Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) pp. 138 - 141
Main Authors:	Jinshu Zhang, Hongyong Jia, Pei-Hsin Tsien, Tai-Chin Lo, Zengmin Yang, Jie Huang, Yihui Wang, Luoguang Huang, Chunguang Liang, Mingxian Feng, Qiyuan Lin
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1999
Subjects:	Fabrication Fingers Frequency Germanium silicon alloys Heterojunction bipolar transistors Implants Nonhomogeneous media Power generation Silicon germanium Voltage
Online Access:	Get full text
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