Search Results - "Miner, J C"
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High-reliability blue-shifted InGaAsP/InP lasers
Published in Applied physics letters (02-12-1996)“…InGaAsP/InP quantum well (QW) ridge waveguide lasers emitting nominally at 1310 nm have been ‘‘blue-shifted’’ selectively (as much as 70 nm) on a full…”
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Journal Article -
2
Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates
Published in Applied physics letters (24-04-1989)“…A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon-on-sapphire and (101̄2) sapphire substrates has been made…”
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3
Device quality AlGaAs grown by chemical beam epitaxy
Published in Journal of crystal growth (01-07-1996)“…Device quality AlGaAs layers have been grown by CBE using both TMAA and DMEAA on 3 inch diameter GaAs substrates. Al 0.3Ga 0.7 As layers with oxygen…”
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Journal Article Conference Proceeding -
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Improved thickness uniformity in molecular beam epitaxial growth of GaAs using a tilted conical insert crucible
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-1991)“…Significant improvements in the uniformity of epitaxial layers of GaAs, deposited using a V80‐H molecular beam epitaxy system, can be obtained by modifying the…”
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5
Determinants of TCDD half-life in veterans of operation ranch hand
Published in Journal of toxicology and environmental health (01-04-1994)“…The half-life of 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD) changed significantly with body fat and age in 337 members of Operation Ranch Hand, the Air Force…”
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6
Implant‐damage isolation of InP and InGaAsP
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1993)“…The creation of high resistivity layers by ion implantation of doped InP and InGaAsP epilayers, and the potential of the implant‐isolation technique for the…”
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Conference Proceeding Journal Article -
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Characterization of Mg-doped InP grown by MOCVD using a bis(methylcyclopentadienyl)magnesium dopant source
Published in Journal of electronic materials (01-09-1989)Get full text
Journal Article -
8
Silicon incorporation in InP during LP-MOCVD using disilane
Published in Journal of electronic materials (1990)“…Silicon doped epitaxial layers of InP have been prepared by low pressure metalorganic chemical vapour deposition, using disilane as the source of silicon…”
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9
Epitaxial layer thickness measurements by reflection spectroscopy
Published in Journal of electronic materials (01-05-1989)Get full text
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10
Annealing and activation of Si implanted InP
Published in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films (01-07-1992)“…The recovery of implant damage, and the activation of Si implanted into InP has been studied over a range of post‐implant anneal temperatures from 295 to 1095…”
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Conference Proceeding Journal Article -
11
Transparent conducting zinc oxide and indium–tin oxide films prepared by modified reactive planar magnetron sputtering
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-1983)“…Transparent conducting layers for liquid crystal displays and plastic substrates must be deposited without significant heating. A planar magnetron sputtering…”
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Journal Article -
12
Health Status of Air Force Veterans Occupationally Exposed to Herbicides in Vietnam: I. Physical Health
Published in JAMA : the journal of the American Medical Association (10-10-1990)“…The Air Force Health Study is a 20-year comprehensive assessment of the health of Air Force veterans of Operation Ranch Hand, the unit responsible for aerial…”
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13
Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation
Published in Applied physics letters (29-12-1997)“…A new method based on low-energy implantation is presented for the fabrication of laser diodes with shifted emission wavelength. The laser diodes are based on…”
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14
Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy
Published in Applied physics letters (23-10-1989)“…Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process…”
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Journal Article -
15
Health Status of Air Force Veterans Occupationally Exposed to Herbicides in Vietnam: II. Mortality
Published in JAMA : the journal of the American Medical Association (10-10-1990)“…The Air Force Health Study is a 20-year comprehensive assessment of the current health of Air Force veterans of Operation Ranch Hand, the unit responsible for…”
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Journal Article -
16
Paternal Serum Dioxin and Reproductive Outcomes among Veterans of Operation Ranch Hand
Published in Epidemiology (Cambridge, Mass.) (01-01-1995)“…We studied whether paternal exposure to Agent Orange and its dioxin contaminant (2,3,7,8-tetrachlorodibenzo-p-dioxin) during the Vietnam War is related to…”
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17
Estimates of the half-life of 2,3,7,8-tetrachlorodibenzo-p-dioxin in Vietnam Veterans of Operation Ranch Hand
Published in Journal of toxicology and environmental health (01-06-1989)“…The half-life of 2,3,7,8-tetrachlorodibenzo-p-dioxin (2,3,7,8-TCDD; commonly known as dioxin) in serum has been measured in 36 Air Force Vietnam veterans of…”
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Journal Article -
18
Wafer‐scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-05-1993)“…A technique for the measurement of the variation in surface temperature across GaAs and InP wafers under normal molecular beam epitaxy and chemical beam…”
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Conference Proceeding Journal Article -
19
Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery
Published in Applied physics letters (13-08-1990)“…A novel planar separate absorption, charge sheet, grading and multiplication avalanche photodiode (APD) structure incorporating a partial charge sheet in the…”
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Journal Article -
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Immunological parameters in current and former US Air Force personnel
Published in Vaccine (1993)“…As part of a comprehensive study of current and former US Air Force personnel, an extensive assessment of the immune system of 497 normal male subjects was…”
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