Search Results - "Minamoto, Takatoshi"

A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology by Shibata, Noboru, Kanda, Kazushige, Shimizu, Takahiro, Nakai, Jun, Nagao, Osamu, Kobayashi, Naoki, Miakashi, Makoto, Nagadomi, Yasushi, Nakano, Tomoaki, Kawabe, Takahisa, Shibuya, Taira, Sako, Mario, Yanagidaira, Kosuke, Hashimoto, Toshifumi, Date, Hiroki, Sato, Manabu, Nakagawa, Tomoki, Musha, Junji, Minamoto, Takatoshi, Uda, Mizuki, Nakamura, Dai, Sakurai, Katsuaki, Yamashita, Takahiro, Zhou, Jieyun, Tachibana, Ryoichi, Takagiwa, Teruo, Sugimoto, Takahiro, Ogawa, Masatsugu, Ochi, Yusuke, Kawaguchi, Kazuaki, Kojima, Masatsugu, Ogawa, Takeshi, Hashiguchi, Tomoharu, Fukuda, Ryo, Masuda, Masami, Kawakami, Koichi, Someya, Tadashi, Kajitani, Yasuyuki, Matsumoto, Yuuki, Sato, Jumpei, Raghunathan, Namasivayam, Koh, Yee Lih, Chen, Shuo, Lee, Juan, Nasu, Hiroaki, Sugawara, Hiroshi, Hosono, Koji, Hisada, Toshiki, Nakamura, Hiroshi

“…A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D flash memory in a 96-word-line (WL)-layer technology that achieves 8.5 Gb/mm 2 has been developed. This is the…”
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13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology by Siau, Chang, Kim, Kwang-Ho, Lee, Seungpil, Isobe, Katsuaki, Shibata, Noboru, Verma, Kapil, Ariki, Takuya, Li, Jason, Yuh, Jong, Amarnath, Anirudh, Nguyen, Qui, Kwon, Ohwon, Jeong, Stanley, Li, Heguang, Hsu, Hua-Ling, Tseng, Tai-yuan, Choi, Steve, Darne, Siddhesh, Anantula, Pradeep, Yap, Alex, Chibvongodze, Hardwell, Miwa, Hitoshi, Yamashita, Minoru, Watanabe, Mitsuyuki, Hayashi, Koichiro, Kato, Yosuke, Miwa, Toru, Kang, Jang Yong, Okumura, Masatoshi, Ookuma, Naoki, Balaga, Muralikrishna, Ramachandra, Venky, Matsuda, Aki, Kulkani, Swaroop, Rachineni, Raghavendra, Manjunath, Pai K., Takehara, Masahito, Pai, Anil, Rajendra, Srinivas, Hisada, Toshiki, Fukuda, Ryo, Tokiwa, Naoya, Kawaguchi, Kazuaki, Yamaoka, Masashi, Komai, Hiromitsu, Minamoto, Takatoshi, Unno, Masaki, Ozawa, Susumu, Nakamura, Hiroshi, Hishida, Tomoo, Kajitani, Yasuyuki, Lin, Lei

“…Advancements in 3D-Flash memory-layer-stacking technology has enabled density scaling that circumvents the lithography limitations which have prevented 2D-NAND…”
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A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology by Maejima, Hiroshi, Kanda, Kazushige, Fujimura, Susumu, Takagiwa, Teruo, Ozawa, Susumu, Sato, Jumpei, Shindo, Yoshihiko, Sato, Manabu, Kanagawa, Naoaki, Musha, Junji, Inoue, Satoshi, Sakurai, Katsuaki, Morozumi, Naohito, Fukuda, Ryo, Shimizu, Yuui, Hashimoto, Toshifumi, Xu Li, Shimizu, Yuuki, Abe, Kenichi, Yasufuku, Tadashi, Minamoto, Takatoshi, Yoshihara, Hiroshi, Yamashita, Takahiro, Satou, Kazuhiko, Sugimoto, Takahiro, Kono, Fumihiro, Abe, Mitsuhiro, Hashiguchi, Tomoharu, Kojima, Masatsugu, Suematsu, Yasuhiro, Shimizu, Takahiro, Imamoto, Akihiro, Kobayashi, Naoki, Miakashi, Makoto, Yamaguchi, Kouichirou, Bushnaq, Sanad, Haibi, Hicham, Ogawa, Masatsugu, Ochi, Yusuke, Kubota, Kenro, Wakui, Taichi, Dong He, Weihan Wang, Minagawa, Hiroe, Nishiuchi, Tomoko, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Ramachandra, Venky, Rajendra, Srinivas, Choi, Steve, Payak, Keyur, Raghunathan, Namas, Georgakis, Spiros, Sugawara, Hiroshi, Seungpil Lee, Futatsuyama, Takuya, Hosono, Koji, Shibata, Noboru, Hisada, Toshiki, Kaneko, Tetsuya, Nakamura, Hiroshi

“…The first multi-layer stacked 3D Flash memory was proposed as BiCS FLASH in 2007 [1]. Since then, memory bit density has grown rapidly due to the increase in…”
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30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology by Higuchi, Tsutomu, Kodama, Takuyo, Kato, Koji, Fukuda, Ryo, Tokiwa, Naoya, Abe, Mitsuhiro, Takagiwa, Teruo, Shimizu, Yuki, Musha, Junji, Sakurai, Katsuaki, Sato, Jumpei, Utsumi, Tetsuaki, Yoneya, Kazuhide, Suematsu, Yasuhiro, Hashimoto, Toshifumi, Hioka, Takeshi, Yanagidaira, Kosuke, Kojima, Masatsugu, Matsuno, Junya, Shiraishi, Kei, Yamamoto, Kensuke, Hayashi, Shintaro, Hashiguchi, Tomoharu, Inuzuka, Kazuko, Sugahara, Akio, Honma, Mitsuaki, Tsunoda, Keiji, Yamamoto, Kazumasa, Sugimoto, Takahiro, Fujimura, Tomofumi, Kaneko, Mizuki, Date, Hiroki, Kobayashi, Osamu, Minamoto, Takatoshi, Tachibana, Ryoichi, Yamaguchi, Itaru, Lee, Juan, Ramachandra, Venky, Rajendra, Srinivas, Tang, Tianyu, Darne, Siddhesh, Lee, Jiwang, Li, Jason, Miwa, Toru, Yamashita, Ryuji, Sugawara, Hiroshi, Ookuma, Naoki, Kano, Masahiro, Mizukoshi, Hiroyuki, Kuniyoshi, Yuki, Watanabe, Mitsuyuki, Akiyama, Kei, Mori, Hirotoshi, Arimizu, Akira, Katano, Yoshito, Ehama, Masakazu, Maejima, Hiroshi, Hosono, Koji, Yoshihara, Masahiro

“…This work demonstrates a novel 1Tb 3D Flash memory chip that has an area efficiency of 10.4Gb/mm 2 in a 3b/cell technology. Using a circuit under array (CUA)…”
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A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology by Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.

“…A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the…”
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A 151-mm 2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology by Fukuda, Koichi, Watanabe, Yoshihisa, Makino, Eiichi, Kawakami, Koichi, Sato, Jumpei, Takagiwa, Teruo, Kanagawa, Naoaki, Shiga, Hitoshi, Tokiwa, Naoya, Shindo, Yoshihiko, Ogawa, Takeshi, Edahiro, Toshiaki, Iwai, Makoto, Nagao, Osamu, Musha, Junji, Minamoto, Takatoshi, Furuta, Yuka, Yanagidaira, Kosuke, Suzuki, Yuya, Nakamura, Dai, Hosomura, Yoshikazu, Tanaka, Rieko, Komai, Hiromitsu, Muramoto, Mai, Shikata, Go, Yuminaka, Ayako, Sakurai, Kiyofumi, Sakai, Manabu, Ding, Hong, Watanabe, Mitsuyuki, Kato, Yosuke, Miwa, Toru, Mak, Alexander, Nakamichi, Masaru, Hemink, Gertjan, Lee, Dana, Higashitani, Masaaki, Murphy, Brian, Lei, Bo, Matsunaga, Yasuhiko, Naruke, Kiyomi, Hara, Takahiko

“…A 64-Gb MLC (2 bit/cell) NAND flash memory with the highest memory density to date as an MLC flash memory, has been successfully developed. To decrease the…”
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A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology by FUKUDA, Koichi, WATANABE, Yoshihisa, OGAWA, Takeshi, EDAHIRO, Toshiaki, IWAI, Makoto, NAGAO, Osamu, MUSHA, Junji, MINAMOTO, Takatoshi, FURUTA, Yuka, YANAGIDAIRA, Kosuke, SUZUKI, Yuya, NAKAMURA, Dai, MAKINO, Eiichi, HOSOMURA, Yoshikazu, TANAKA, Rieko, KOMAI, Hiromitsu, MURAMOTO, Mai, SHIKATA, Go, YUMINAKA, Ayako, SAKURAI, Kiyofumi, SAKAI, Manabu, HONG DING, WATANABE, Mitsuyuki, KAWAKAMI, Koichi, KATO, Yosuke, MIWA, Toru, MAK, Alexander, NAKAMICHI, Masaru, HEMINK, Gertjan, LEE, Dana, HIGASHITANI, Masaaki, MURPHY, Brian, BO LEI, MATSUNAGA, Yasuhiko, SATO, Jumpei, NARUKE, Kiyomi, HARA, Takahiko, TAKAGIWA, Teruo, KANAGAWA, Naoaki, SHIGA, Hitoshi, TOKIWA, Naoya, SHINDO, Yoshihiko

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A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology by Fukuda, K, Watanabe, Y, Makino, E, Kawakami, K, Sato, J, Takagiwa, T, Kanagawa, N, Shiga, H, Tokiwa, N, Shindo, Y, Edahiro, T, Ogawa, T, Iwai, M, Nagao, O, Musha, J, Minamoto, T, Yanagidaira, K, Suzuki, Y, Nakamura, D, Hosomura, Y, Komai, H, Furuta, Y, Muramoto, M, Tanaka, R, Shikata, G, Yuminaka, A, Sakurai, K, Sakai, M, Ding, H, Watanabe, M, Kato, Y, Miwa, T, Mak, A, Nakamichi, M, Hemink, G, Lee, D, Higashitani, M, Murphy, B, Lei, B, Matsunaga, Y, Naruke, K, Hara, T

“…NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has…”
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