Search Results - "Minamisawa, R.A."

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5 by Minamisawa, R.A., Süess, M.J., Spolenak, R., Faist, J., David, C., Gobrecht, J., Bourdelle, K.K., Sigg, H.

“…Strained Si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior…”
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Thermoelectric properties of Zn4Sb3/CeFe(4−)Co Sb12 nano-layered superlattices modified by MeV Si ion beam by Budak, S., Guner, S., Minamisawa, R.A., Muntele, C.I., Ila, D.

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Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes by Rossmann, H.R., Bubendorf, A., Zanella, F., Marjanović, N., Schnieper, M., Meyer, E., Jung, T.A., Gobrecht, J., Minamisawa, R.A., Bartolf, H.

“…The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture which is well-established in silicon technology and benefits…”
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MeV Si ions bombardment effects on the thermoelectric properties of nano-layers of nanoclusters of Ag in SiO 2 host by Budak, S., Guner, S., Minamisawa, R.A., ILA, D.

“…We prepared 50 periodic nano-layers of SiO 2/Ag x SiO 2(1 − x) with Au layer deposited on both sides as metal contacts. The deposited multi-layer films have a…”
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MeV Si ions bombardment effects on the thermoelectric properties of nano-layers of nanoclusters of Ag in SiO2 host by BUDAK, S, GUNER, S, MINAMISAWA, R. A, ILA, D

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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors by Schmidt, M., Minamisawa, R.A., Richter, S., Luptak, R., Hartmann, J.-M., Buca, D., Zhao, Q.T., Mantl, S.

“…► n- and p-type compressively strained Si1-xGex TFETs were fabricated. ► Si0.5Ge0.5 TFETs show best performance with high on-current and low subthreshold…”
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Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited BixTe3/Sb2Te3 nano-layers by Budak, S., Muntele, C.I., Minamisawa, R.A., Chhay, B., Ila, D.

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High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack by MINAMISAWA, R. A, SCHMIDT, M, DURGUN ÖZBEN, E, LOPES, J. M. J, HARTMANN, J. M, BOURDELLE, K. K, SCHUBERT, J, ZHAO, Q. T, BUCA, D, MANTL, S

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High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack by Minamisawa, R.A., Schmidt, M., Durgun Özben, E., Lopes, J.M.J., Hartmann, J.M., Bourdelle, K.K., Schubert, J., Zhao, Q.T., Buca, D., Mantl, S.

“…Short channel p-type metal-oxide-semiconductor field effect transistors (MOSFETs) with GdScO 3 gate dielectric were fabricated on a quantum well strained…”
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Surface modification of Si/Ge multi-layers by MeV Si ion bombardment by Budak, S., Guner, S., Smith, C., Minamisawa, R.A., Zheng, B., Muntele, C., Ila, D.

“…We made 50 periodic nano-layers of Si/Ge superlattice films with Au layers deposited on both sides as metal contacts. Each layer is 7.3 nm thick. The…”
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Effects of low and high energy ion bombardment on ETFE polymer by Minamisawa, R.A., De Almeida, A., Abidzina, V., Parada, M.A., Muntele, I., Ila, D.

“…The polymer ethylenetetrafluoroethylene (ETFE) is used as anti-adherent coatings for food packages and radiation dosimeters. In this work, we compare the…”
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Investigations of low-energy ion irradiation influence on glassy polymeric carbon by Abidzina, V., Tereshko, I., Elkin, I., Muntele, I., Muntele, C., Minamisawa, R.A., Ila, D.

“…Glassy polymeric carbon (GPC), which is made from phenolic resins, has a high chemical inertness and is used as high temperature and radiation resistant…”
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Study of Arsenic ion implantation of patterned strained Si NWs by Minamisawa, R.A., Habicht, S., Knoll, L., Zhao, Q.T., Buca, D., Mantl, S., Köhler, F., Carius, R.

“…► The formation of highly doped strained Si NWs and layers on insulator is presented. ► Patterning of doped layers results in perfect crystalline doped…”
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Damage effects of gamma and X-rays in polymer film electrets by Parada, M.A., Minamisawa, R.A., Moreira, M.V., de Almeida, A., Muntele, I., Ila, D.

“…Dosimeters produced with electret materials are able to detect X-rays, α, β, γ rays, electrons and other charged particles and, with appropriate converters,…”
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Electret Pattern Fornation in Teflon by Pyroeletric and Photogalvanic Electron Emission From LiNbO3 by Minamisawa, R.A., Parada, M.A., de Almeida, A., Kukhtarev, N., Kukhtareva, T., Zimmerman, R.L.

“…High field emission of electrons in the c direction of pyroelectric LiNbO 3 has recently been reported [Ref.1]. With modest temperature variations, electron…”
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Advances in Si & Ge millisecond processing: From silicon-on-insulator to superconducting Ge by Skorupa, W., Heera, V., Herrmannsdorfer, T., Posselt, M., Buca, D., Minamisawa, R.A., Mantl, S., Anwand, W., Gebel, T.

“…Advanced SOI material can be treated in advantageous manner regarding ultra shallow junction (USJ) formation using millisecond annealing techniques…”
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