Characterization and integration of new porous low- k dielectric ( k < 2.3) for 65 nm technology and beyond

In this paper, new porous spin-on dielectric (HL02™, trademark of the LG Ltd.) was studied. The characterizations, such as thermal stability, chemical structure, dielectric constant ( k) and mechanical properties (hardness and modulus), of methylsilsesquioxane (MSQ)-based dielectrics were evaluated....

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Bibliographic Details
Published in:	Thin solid films Vol. 515; no. 12; pp. 5025 - 5030
Main Authors:	Choi, Kyeong-Keun, Cho, Ihl Hyun, Park, Sang Jong, Lim, Jung Eun, Jung, Oh Jin, Park, Jong Hyuk, Min, Byung Seung, Hwang, Sung Bo, Ko, Min Jin, Lee, Jeong Gun
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Lausanne Elsevier B.V 23-04-2007 Elsevier Science
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Copper Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Integration Mechanical and acoustical properties Methylsilsesquioxane (MSQ) Physical properties of thin films, nonelectronic Physics Porous low- k Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thermal stability; thermal effects Methylsilsesquioxane (MSQ) Integration Copper Porous low- k Structure stability Porous materials Chemical stability Mechanical properties Porous low-k Leakage currents Hardness Thermal stability Thin films Thermal properties Porosity Permittivity Low k dielectric
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Summary:	In this paper, new porous spin-on dielectric (HL02™, trademark of the LG Ltd.) was studied. The characterizations, such as thermal stability, chemical structure, dielectric constant ( k) and mechanical properties (hardness and modulus), of methylsilsesquioxane (MSQ)-based dielectrics were evaluated. An optimized material ( k = 2.25), characterized by a hardness and a modulus of 1.0 GPa and 6.5 GPa each in association with a porosity of 30% and a mean pore radius of 2.2 nm, was successfully integrated in damascene process with 10 levels of Cu/low- k film for 65 nm technology and beyond. Good electrical results were obtained in metal line resistance and leakage current.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2006.10.096