Search Results - "Milosavljevic, I"

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    Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation by Reed, M D, Maune, B M, Andrews, R W, Borselli, M G, Eng, K, Jura, M P, Kiselev, A A, Ladd, T D, Merkel, S T, Milosavljevic, I, Pritchett, E J, Rakher, M T, Ross, R S, Schmitz, A E, Smith, A, Wright, J A, Gyure, M F, Hunter, A T

    Published in Physical review letters (18-03-2016)
    “…We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge…”
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    Journal Article
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    Ultra-low resistance ohmic contacts in graphene field effect transistors by Moon, J. S., Antcliffe, M., Seo, H. C., Curtis, D., Lin, S., Schmitz, A., Milosavljevic, I., Kiselev, A. A., Ross, R. S., Gaskill, D. K., Campbell, P. M., Fitch, R. C., Lee, K.-M., Asbeck, P.

    Published in Applied physics letters (14-05-2012)
    “…We report on an experimental demonstration of graphene-metal ohmic contacts with contact resistance below 100 Ω µ m. These have been fabricated on graphene…”
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    Journal Article
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    Measurement of valley splitting in high-symmetry Si/SiGe quantum dots by Borselli, M. G., Ross, R. S., Kiselev, A. A., Croke, E. T., Holabird, K. S., Deelman, P. W., Warren, L. D., Alvarado-Rodriguez, I., Milosavljevic, I., Ku, F. C., Wong, W. S., Schmitz, A. E., Sokolich, M., Gyure, M. F., Hunter, A. T.

    Published in Applied physics letters (21-03-2011)
    “…We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0 . These display a high degree of spatial…”
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    Journal Article
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    Comparison of short-term and medium-term swimming training on cardiodynamics and coronary flow in high salt-induced hypertensive and normotensive rats by Plecevic, S., Jakovljevic, B., Savic, M., Zivkovic, V., Nikolic, T., Jeremic, J., Milosavljevic, I., Srejovic, I., Tasic, N., Djuric, D., Jakovljevic, V.

    Published in Molecular and cellular biochemistry (01-10-2018)
    “…The aim of present study was to evaluate the effects of 3- and 6-week swimming exercise on cardiodynamics and coronary flow in high salt-induced hypertensive…”
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    Journal Article
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    Influence of fiber orientation and length distribution on the rheological characterization of glass-fiber-filled polypropylene by Köpplmayr, T., Milosavljevic, I., Aigner, M., Hasslacher, R., Plank, B., Salaberger, D., Miethlinger, J.

    Published in Polymer testing (01-05-2013)
    “…We report on the characterization of glass-fiber-filled polypropylene compounds identified by means of rotational rheometry in parallel plate mode. The small…”
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    Journal Article
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    Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications by Moon, J.S., Shihchang Wu, Wong, D., Milosavljevic, I., Conway, A., Hashimoto, P., Hu, M., Antcliffe, M., Micovic, M.

    Published in IEEE electron device letters (01-06-2005)
    “…We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30…”
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    Journal Article
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    Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f by Corrion, A L, Shinohara, K, Regan, D, Milosavljevic, I, Hashimoto, P, Willadsen, P J, Schmitz, A, Wheeler, D C, Butler, C M, Brown, D, Burnham, S D, Micovic, M

    Published in IEEE electron device letters (01-10-2010)
    “…An enhancement-mode (E-mode) AlN/GaN/AlGaN double-heterojunction field-effect transistor (DHFET) with record high-frequency performance is reported. E-mode…”
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    Journal Article
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    Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs by Moon, J S, Wong, D, Hashimoto, P, Hu, M, Milosavljevic, I, Willadsen, P, McGuire, C, Burnham, S, Micovic, M, Wetzel, M, Chow, D

    Published in IEEE electron device letters (01-03-2011)
    “…In this letter, we report the state-of-the-art micro wave noise performance of discrete 0.15-μm-gate-length field plated (FP) GaN HEMTs. The FP GaN HEMTs…”
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    Journal Article
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    W-Band GaN MMIC with 842 mW output power at 88 GHz by Micovic, M, Kurdoghlian, A, Shinohara, K, Burnham, S, Milosavljevic, I, Hu, M, Corrion, A, Fung, A, Lin, R, Samoska, L, Kangaslahti, P, Lambrigtsen, B, Goldsmith, P, Wong, W S, Schmitz, A, Hashimoto, P, Willadsen, P J, Chow, D H

    “…We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this…”
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    Conference Proceeding
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    Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth by Brown, D F, Shinohara, K, Williams, A, Milosavljevic, I, Grabar, R, Hashimoto, P, Willadsen, P J, Schmitz, A, Corrion, A L, Kim, S, Regan, D, Butler, C M, Burnham, S D, Micovic, M

    Published in IEEE transactions on electron devices (01-04-2011)
    “…We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE)…”
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    Journal Article
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    Thermal Effects in Cellulose Pyrolysis:  Relationship to Char Formation Processes by Milosavljevic, Ivan, Oja, Vahur, Suuberg, Eric M

    “…The thermochemistry of cellulose pyrolysis has been studied by a combination of differential scanning calorimetry and thermogravimetric analysis. Additionally,…”
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    Journal Article
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    Cellulose Thermal Decomposition Kinetics: Global Mass Loss Kinetics by Milosavljevic, Ivan, Suuberg, Eric M

    “…The kinetics of cellulose pyrolysis have received considerable attention during the past few decades. Despite intensive study, there remains controversy in the…”
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    Journal Article
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    GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio by Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Hu, M., Antcliffe, M., Willadsen, P.J., Wong, W.S., Bowen, R., Milosavljevic, I., Yoon, Y., Schmitz, A., Wetzel, M., McGuire, C., Hughes, B., Chow, D.H.

    “…High data rate E-band (71 GHz- 76 GHz, 81 GHz - 86 GHz, 92 GHz - 95 GHz) communication systems will benefit from power amplifiers that are more than twice as…”
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    Conference Proceeding
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    Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE by Milosavljevic, I, Shinohara, K, Regan, D, Burnham, S, Corrion, A, Hashimoto, P, Wong, D, Hu, M, Butler, C, Schmitz, A, Willadsen, P J, Micovic, M

    Published in 68th Device Research Conference (01-06-2010)
    “…In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an…”
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    Conference Proceeding
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