Search Results - "Miller, B. I."

Intraspecific variability in flatback turtle habitat use: δ15N as an indicator of foraging locations by Abrantes, K, Wildermann, N, Miller, IB, Hamann, M, Limpus, CJ, Madden Hof, CA, Bell, I, Sheaves, M, Barnett, A

“…Identifying migration routes and key habitats is critical for the management and conservation of migratory species. Tracking and stable isotope analysis (SIA),…”
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Mutation-Specific Functional Impairments in Distinct Tau Isoforms of Hereditary FTDP-17 by Hong, Ming, Zhukareva, Victoria, Vogelsberg-Ragaglia, Vanessa, Wszolek, Zbigniew, Reed, Lee, Miller, Bruce I., Geschwind, Dan H., Bird, Thomas D., McKeel, Daniel, Goate, Alison, Morris, John C., Wilhelmsen, Kirk C., Schellenberg, Gerard D., Trojanowski, John Q., Virginia M.-Y. Lee

“…Tau proteins aggregate as cytoplasmic inclusions in a number of neurodegenerative diseases, including Alzheimer's disease and hereditary frontotemporal…”
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Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator by Chan, P.-Y., Gogna, M., Suarez, E., Al-Amoody, F., Karmakar, S., Miller, B. I., Heller, E. K., Ayers, J. E., Jain, F. C.

“…An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn 0.95 Mg 0.05 S as the gate insulator is presented in this paper, showing three…”
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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior by Chan, P.-Y., Suarez, E., Gogna, M., Miller, B.I., Heller, E.K., Ayers, J.E., Jain, F.C.

“…This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “ i ” state in…”
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Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators by Chan, P.-Y., Gogna, M., Suarez, E., Karmakar, S., Al-Amoody, F., Miller, B. I., Jain, F. C.

“…This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal–oxide–semiconductor (MOS) device, and…”
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High-gain mode-adapted semiconductor optical amplifier with 12.4-dBm saturation output power at 1550 nm by Dreyer, K., Joyner, C.H., Pleumeekers, J.L., Burrus, C.A., Dentai, A., Miller, B.I., Shunk, S., Sciortino, P., Chandrasekhar, S., Buhl, L., Storz, F., Farwell, M.

“…A mode-adapted semiconductor optical amplifier (SOA) has been fabricated and packaged. At the gain peak, 1500 nm, the fiber to fiber gain was measured to be…”
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Elastic strains in heteroepitaxial ZnSe1-xTex on InGaAs/InP (001) by YARLAGADDA, B, RODRIGUEZ, A, LI, P, MILLER, B. I, JAIN, F. C, AYERS, J. E

“…Here we report on the elastic strains in ZnSe1-xTex (x < 0.9) epitaxial layers grown using photo-assisted metalorganic vapor phase epitaxy on…”
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Compact digitally tunable laser by Van Thourhout, D., Zhang, L., Yang, W., Miller, B.I., Sauer, N.J., Doerr, C.R.

“…We present a new design for a digitally tunable laser using two waveguide grating routers with different free spectral range. For an N-channel device, both the…”
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Polarization rotation in asymmetric periodic loaded rib waveguides by SHANI, Y, ALFERNESS, R, KOCH, T, KOREN, U, ORON, M, MILLER, B. I, YOUNG, M. G

“…A new mechanism for polarization rotation in rib waveguides is suggested and demonstrated in InP waveguides. The polarization rotation is achieved by loading a…”
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Tuberculosis prevention and control activities in the United States: an overview of the organization of tuberculosis services by BINKIN, N. J, VERNON, A. A, SIMONE, P. M, MCCRAY, E, MILLER, B. I, SCHIEFFELBEIN, C. W, CASTRO, K. G

“…After a 20% increase in tuberculosis (TB) cases between 1986 and 1992, TB cases in the United States have declined from 1993 through 1997, an average of 5 to 7…”
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Low threshold, wafer fused long wavelength vertical cavity lasers by Dudley, J. J., Babić, D. I., Mirin, R., Yang, L., Miller, B. I., Ram, R. J., Reynolds, T., Hu, E. L., Bowers, J. E.

“…We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The…”
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All-optical Mach-Zehnder wavelength converter with monolithically integrated preamplifiers by Spiekman, L.H., Wiesenfeld, J.M., Koren, U., Miller, B.I., Chien, M.D.

“…An interferometric wavelength converter with preamplifiers for both the signal input and the continuous-wave probe input is presented. The dynamic range of the…”
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Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasers by MILLER, B. I, KOREN, U, YOUNG, M. G, CHIEN, M. D

“…Strain-compensated strained-layer multiple quantum well structures have been grown by introducing opposite strain into the barrier layers. Such structures show…”
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Quantum wires in InGaAs/InP fabricated by holographic photolithography by MILLER, B. I, SHAHAR, A, KOREN, U, CORVINI, P. J

“…Quantum wires ≊300–400 Å wide were fabricated by holographic photolithography from a wafer having a single 100 Å InGaAs quantum well. The wires were then…”
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Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers by KOREN, U, KOCH, T. L, MILLER, B. I, EISENSTEIN, G, BOSWORTH, R. H

“…We describe a photonic integrated circuit composed of three 1.5 μm wavelength multiple quantum well tunable lasers with a passive optical power combiner and an…”
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Digitally tunable laser based on the integration of a waveguide grating multiplexer and an optical amplifier by Zirngibl, M., Joyner, C.H., Stulz, L.W., Koren, U., Chien, M.-D., Young, M.G., Miller, B.I.

“…A novel monolithic semiconductor laser is demonstrated. The optical cavity comprises a 1/spl times/N waveguide grating multiplexer connected to N optical…”
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Modeling and performance of wafer-fused resonant-cavity enhanced photodetectors by I-Hsing Tan, Hu, E.L., Bowers, J.E., Miller, B.I.

“…We discuss wavelength tuning and its corresponding quantum efficiency modulated by the standing wave effects in a resonant-cavity enhanced (RCE) photodetector…”
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Quantum-confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy by BAR-JOSEPH, I, KLINGSHIRN, C, MILLER, D. A. B, CHEMLA, D. S, KOREN, U, MILLER, B. I

“…We report the first observation of the quantum-confined Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy. The…”
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Crosstalk-, loss-, and length-reduced digital optical Y-branch switches using a double-etch waveguide structure by Khan, M.N., Miller, B.I., Burrows, E.C., Burrus, C.A.

“…We demonstrate a novel Y-branch digital switch with a double-etch waveguide structure to greatly enhance the loss and crosstalk performance. The double-etch…”
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Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser by KOREN, U, MILLER, B. I, SU, Y. K, KOCH, T. L, BOWERS, J. E

“…The structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54 μm are…”
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