High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of en...

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 25; no. 9; pp. 622 - 624
Main Authors:	Black, C.T., Guarini, K.W., Ying Zhang, Hyungjun Kim, Benedict, J., Sikorski, E., Babich, I.V., Milkove, K.R.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-09-2004 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Applied sciences Capacitance Capacitors Compound structure devices Decoupling Devices Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Fabrication Frequency Integrated circuit noise Metal oxide semiconductors MIM capacitors MOS capacitors Nanoscale devices Power supplies Self assembly Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Performance evaluation Silicon on insulator technology Self assembly metal- oxide-semiconductor Microelectronic fabrication Decoupling Decoupling capacitor high surface area Capacitance System on a chip MOS capacitor
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Summary:	We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metal-oxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2004.834637