Search Results - "Milenin, A.P."

First demonstration of ferroelectric Si:HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application by Banerjee, K., Breuil, L., Milenin, A.P., Pak, M., Stiers, J., McMitchell, S. R. C., Di Piazza, L., van den bosch, G., van Houdt, J.

“…A vertical 3D ferroelectric (FE) FET, fabricated with a trench-based architecture, has been demonstrated for the first time. Devices were fabricated on 300mm…”
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Self-aligned double patterning process for subtractive Ge fin fabrication at 45-nm pitch by Milenin, A.P., Witters, L., Barla, K., Thean, A.

“…The self-aligned double patterning scheme has been developed for subtractive Ge fin patterning targeting critical dimension (CD) <14nm at pitch of 45nm…”
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A wafer-scaled III-V vertical FET fabrication by means of plasma etching by Milenin, A.P., Veloso, A., Collaert, N., Piumi, D.

“…An industry-friendly approach to fabricate III-V vertical FETs is demonstrated, focusing on n+/i/n+InGaAs stacks grown inside wide-field trenches defined in an…”
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Integration aspects of strained Ge pFETs by Witters, L., Eneman, G., Mitard, J., Vincent, B., Hikavyy, A., Milenin, A.P., Mertens, S., Thean, A., Collaert, N.

“…Strained Ge channel PFETs have the potential to outperform state-of-the-art strained Si channel PFETs. This paper describes the integration aspects for…”
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Plasma etching of proton-exchanged lithium niobate by Hu, H., Milenin, A. P., Wehrspohn, R. B., Hermann, H., Sohler, W.

“…Plasma etching of lithium niobate with fluorine gases is limited by the redeposition LiF. This results in a low etch rate and nonvertically etched walls…”
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Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy by Himcinschi, C., Radu, I., Singh, R., Erfurth, W., Milenin, A.P., Reiche, M., Christiansen, S.H., Gösele, U.

“…Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78Ge 0.22 (SiGe) epitaxial layers (4 μm) on silicon substrates. Periodic…”
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SOI planar photonic crystal fabrication: Etching through SiO 2/Si/SiO 2 layer systems using fluorocarbon plasmas by Milenin, A.P., Jamois, C., Geppert, T., Gösele, U., Wehrspohn, R.B.

“…Dry plasma etching of sub-micron structures in a SiO 2/Si/SiO 2 layer system using Cr as a mask was performed in a fluorocarbon plasma. It was determined that…”
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The SOI planar photonic crystal fabrication: patterning of Cr using Cl 2/O 2 plasma etching by Milenin, A.P., Jamois, C., Wehrspohn, R.B., Reiche, M.

“…RIE-plasma etching of sub-micron structures in 150–200-nm thick Cr layers deposited on 4-inch SiO 2/Si/SiO 2 wafers was investigated as a function of the gas…”
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SOI planar photonic crystal fabrication : Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas by MILENIN, A. P, JAMOIS, C, GEPPERT, T, GÖSELE, U, WEHRSPOHN, R. B

“…Dry plasma etching of sub-micron structures in a SiO2/Si/SiO2 layer system using Cr as a mask was performed in a fluorocarbon plasma. It was determined that…”
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Formation of the Co/Si(111)7×7 interface: AES- and EELS-study by Plusnin, N.I., Milenin, A.P., Prihod'ko, D.P.

“…Formation of the Co/Si(111)7×7 interface has been investigated by methods of electron energy loss spectroscopy (EELS) and Auger-electron spectroscopy (AES)…”
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The SOI planar photonic crystal fabrication: patterning of Cr using Cl2/O2 plasma etching by MILENIN, A. P, JAMOIS, C, WEHRSPOHN, R. B, REICHE, M

“…RIE-plasma etching of sub-micron structures in 150-200-nm thick Cr layers deposited on 4-inch SiO2/Si/SiO2 wafers was investigated as a function of the gas…”
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EELS peak intensity dependence on primary electron energy for the Si(111)7×7 and Si(111)-Cr surface structures by Plusnin, N.I., Soldatov, V.Y., Milenin, A.P.

“…The intensity of elastic and bulk plasma loss peaks and also the energy position of the bulk plasma loss peak in the electron energy loss spectra of the…”
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