Search Results - "Milchanin, O."

Fluence effect on photo- and electroluminescence of silica layers implanted with Sn+ ions by Romanov, I., Komarov, F., Parkhomenko, I., Vlasukova, L., Makhavikou, M., Milchanin, O., Wendler, E., van Vuuren, A., Neethling, J.

“…•Annealed Sn-implanted SiO2 films exhibit intense blue-violet electroluminescence.•Blue-violet emission intensity decreases with Sn concentration in SiO2…”
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X-Ray Photoelectron and Rutherford Backscattering Spectroscopy of Silicon Hyperdoped with Selenium by Komarov, F. F., Wang, Ting, Vlasukova, L. A., Parkhomenko, I. N., Milchanin, O. V.

“…The possibility of surface passivation of silicon by hyperdoping with Se and laser annealing was evaluated by x-ray photoelectron spectroscopy (XPS) and…”
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Synthesis and Study of Cathode Materials Based on Carbon Nanotubes for Lithium-Ion Batteries by Shchegolkov, A. V., Komarov, F. F., Lipkin, M. S., Milchanin, O. V., Parfimovich, I. D., Shchegolkov, A. V., Semenkova, A. V., Velichko, A. V., Chebotov, K. D., Nokhaeva, V. A.

“…This work presents a study of the conditions and possibilities for the intercalation of hexafluorophosphate anions into CNT-based electrodes. For this,…”
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Radio Absorbing Composite Materials of Scattering Type Based on Carbon Nanotubes by Parfimovich, I. D., Komarov, F. F., Milchanin, O. V., Shchegolkov, A. V., Tkachev, A. G.

“…The article presents a study of acrylic dispersions modified with multilayer carbon nanotubes to create impregnating compositions of pyramidal radio absorbing…”
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Raman study of light-emitting SiNx films grown on Si by low-pressure chemical vapor deposition by Komarov, F., Vlasukova, L., Parkhomenko, I., Milchanin, O., Mudryi, A., Togambaeva, A., Korolik, O.

“…Si-rich silicon nitride (SRSN) films were deposited on Si wafers by low pressure chemical vapor deposition (LPCVD) technique and, subsequently, annealed at…”
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Optical Properties of Selenium-Hyperdoped Si Layers: Effects of Laser and Thermal Treatment by Komarov, F. F., Vlasukova, L. A., Milchanin, O. V., Parkhomenko, I. N., Berencen, Y., Alzhanova, A. E., Wang, Ting, Zuk, J.

“…Silicon layers with a selenium impurity concentration up to 10 21 cm –3 , which exceeds the equilibrium solubility limit of this impurity in silicon by four…”
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Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere by Komarov, F. F., Makhavikou, M. A., Vlasukova, L. A., Milchanin, O. V., Skuratov, V. A., Vuuren, A. Janse, Neetling, J. N., Parkhomenko, I. N., Żuk, J.

“…It has been found that “hot” high-fluence Zn + implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in…”
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Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis by Komarov, F., Vlasukova, L., Milchanin, O., Mudryi, A., Dunets, B., Wesch, W., Wendler, E.

“…We have studied the ion‐beam synthesis of GaSb nanocrystals in Si by high‐fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED,…”
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Absorption and Reflectance Spectra of Microwave Radiation by an Epoxy Resin Composite with Multi-Walled Carbon Nanotubes by Komarov, F. F., Milchanin, O. V., Parfimovich, I. D., Grinchenko, M. V., Parhomenko, I. N., Tkachev, A. G., Bychanok, D. S.

“…A procedure for dispersing multi-walled carbon nanotubes in the two-component polymer SpeciFix-20 (epoxy resin + hardener) using combined hydromechanical and…”
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Formation of InAs nanocrystals in Si by high-fluence ion implantation by Komarov, F., Vlasukova, L., Wesch, W., Kamarou, A., Milchanin, O., Grechnyi, S., Mudryi, A., Ivaniukovich, A.

“…We have studied the formation of InAs precipitates with dimensions of several nanometers in silicon by means of As (245 keV, 5 × 10 16 cm −2) and In (350 keV,…”
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Ion-beam formation and track modification of InAs nanoclusters in silicon and silica by Komarov, F. F., Milchanin, O. V., Skuratov, V. A., Makhavikou, M. A., Janse van Vuuren, A., Neethling, J. N., Wendler, E., Vlasukova, L. A., Parkhomenko, I. N., Yuvchenko, V. N.

“…The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a…”
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Optical and Structural Properties of Silicon with Ion-Beam Synthesized InSb Nanocrystals by Komarov, F. F., Romanov, I. A., Vlasukova, L. A., Milchanin, O. V., Parkhomenko, I. N., Kovaleva, T. B., Korolik, O. V., Mudryi, A. V., Wendler, E.

“…Transmission electron microscopy (TEM), Raman scattering (RS), and photoluminescence (PL) techniques are used to study the structure, phase composition, and…”
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Effect of Methods for Fabrication of Polymer Composites with Carbon Nanotubes on Conduction Processes by Komarov, F. F., Parfimovich, I. D., Tkachev, A. G., Shchegol’kov, A. V., Mil’chanin, O. V., Bondarev, V.

“…Effect of regimes of fabrication of nanostructured polymer composites filled with carbon nanotubes on electrophysical characteristics is analyzed. Dependence…”
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Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties by Komarov, F. F., Mil’chanin, O. V., Parchomenko, I. N., Kuchinskii, P. V., Al’zhanova, A. E., Mokhovikov, M. A., Wendler, E.

“…Optical and structural properties of silicon layers implanted with indium and arsenic ions and annealed by laser pulses were investigated. It is shown with the…”
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Effect of Pulsed Laser Annealing on Optical Properties of Selenium-Hyperdoped Silicon by Komarov, F. F., Parkhomenko, I. N., Mil’chanin, O. V., Ivlev, G. D., Vlasukova, L. A., Żuk, Yu, Tsivako, A. A., Koval’chuk, N. S.

“…Layers of selenium-hyperdoped silicon with dopant concentration of up to (4–6) × 10 20 cm –3 that exceeds the limit of equilibrium solubility of this impurity…”
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Broad infrared absorption band through ion beam hyperdoping of silicon with selenium by Komarov, F., Parkhomenko, I., Alzhanova, A., Wang, T., Zhussupbekov, K., Zhussupbekova, A., Shvets, I., Wendler, E., Berman, S., Milchanin, O.

“…[Display omitted] •High level of Se substitution in the Si lattice is achieved by implantation with nanosecond pulse laser annealing.•Scanning tunneling…”
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Effects of swift heavy ion irradiation on the InAs and Zn-based nanoparticles ion-beam synthesized in silica by Vlasukova, L., Komarov, F., Makhavikou, M., van Vuuren, A., Skuratov, V., Dauletbekova, A., Neethling, J., Wendler, E., Zuk, J., Parkhomenko, I., Milchanin, O.

“…Till now, a shape elongation effect under swift heavy ions (SHI) irradiation was observed predominantly for metal nanoparticles (NPs). We report this effect…”
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Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films by Parkhomenko, I., Vlasukova, L., Komarov, F., Milchanin, O., Makhavikou, M., Mudryi, A., Zhivulko, V., Żuk, J., Kopyciński, P., Murzalinov, D.

“…Si-rich (SiN1.1) and N-rich (SiN1.5) silicon nitride films were grown on the Si wafers by plasma-enhanced chemical vapor deposition. Their composition and…”
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Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation by Makhavikou, M., Parkhomenko, I., Vlasukova, L., Komarov, F., Milchanin, O., Mudryi, A., Zhivulko, V., Wendler, E., Togambayeva, A., Korolik, O.

“…Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and…”
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Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation by Komarov, F. F., Ismailova, G. A., Mil’chanin, O. V., Parkhomenko, I. N., Zhusipbekova, F. B., Yar-Mukhamedova, G. Sh

“…Rutherford backscattering and transmission electron microscopy (TEM) are used to study distributions of impurities and structure of the GaSb + Si…”
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