Search Results - "Mikitchuk, K. B."

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures by Zhuravlev, K. S., Gilinsky, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., Mikitchuk, K. B.

“…The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the…”
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High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines by Chizh, A. L., Mikitchuk, K. B., Zhuravlev, K. S., Dmitriev, D. V., Toropov, A. I., Valisheva, N. A., Aksenov, M. S., Gilinsky, A. M., Chistokhin, I. B.

“…Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs…”
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Nonlinear difference-frequency generation in the mid-infrared spectral range in waveguides with a modulated permittivity profile by Mikitchuk, K. B., Afonenko, A. A.

“…A method for implementing quasi-phase matching for nonlinear difference-frequency generation in planar waveguides with a modulated permittivity profile is…”
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High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures by Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L., Mikitchuk, K. B.

“…Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial…”
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